282 research outputs found
Influence of reactive ion etching on the minority carrier lifetime in P-type Si
Quasi-steady-state photoconductance (QSSPC) and deep level transient spectroscopy (DLTS) were used to characterize the recombination properties of reactive ion etched p-type Si. The effective lifetime of the plasma-processed samples degraded after etching, with the densities of recombination centers increasing linearly with etch time, before reaching a plateau. Evidence is provided for the long-range (> 2 µm) migration of defects in the samples plasma-etched at room temperature. The relationship between rf power and lifetime degradation is also discussed. A defect with energy position at (0.31 ± 0.02) eV was detected by DLTS in RIE p-Si, whereas no defect level was measured in n-type Si. We demonstrate that this energy level could be used to adequately model the injection-dependence of the measured carrier lifetimes using the Shockley-Read-Hall model
Can Trade with the People’s Republic of China be an Engine of Growth for Developing Asia?
Association of Southeast Asian Nations, People's Republic of China, and India Growth and the Rest of the World: The Role of Trade
Beyond Industrialization: New Approaches to Development Strategy Based on the Service Sector
Exports and Employment in Indonesia: The Decline in Labor-Intensive Manufacturing and the Rise of Services
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