Failure of the Scalar Dielectric Function Approach for the Screening Modeling in Double-Gate SOI MOSFETs and in FinFETs

This paper shows that modeling of the screening effect based on the scalar dielectric function (SDF) fails in double-gate (DG) MOS transistors and in FinFETs. This leads to simulation results inconsistent with the experiments, especially at high channel inversion densities where the mobility is limited by the surface roughness scattering. These results suggest that one should not use the SDF to model transport in DG silicon-oninsulator MOSFETs or FinFETs, but rather resort to the full tensorial dielectric function. This paper clearly identifies, using multi-subband Monte Carlo simulations as well as analytical derivations for the screened matrix elements of the surface roughness scattering, the simplifying assumptions in the derivation of the SDF that do not hold in a DG MOSFET

Revised analysis of the mobility and ION degradation in high-k gate stacks: surface optical phonons vs. remote Coulomb scattering

We use Multi-Subband Monte Carlo simulations to understand which mechanism is mainly responsible for the mobility degradation observed in nMOSFETs featuring high-k dielectrics. Direct comparison with the experimental data of Cass\ue9 et al. points out that for realistic interfacial layer thicknesses the effect of surface optical phonons on the mobility is very modest, and that the measured mobility reduction can be attributed to remote Coulomb scattering of charge in the gate-stack with concentrations in the order of 10^14 cm-2. We found that the drain current reduction in short channel devices is, instead, not as strong as the mobility reduction

Revised analysis of the mobility and ION degradation in high-k gate stacks: surface optical phonons vs. remote Coulomb scattering

We use Multi-Subband Monte Carlo simulations to understand which mechanism is mainly responsible for the mobility degradation observed in nMOSFETs featuring high-k dielectrics. Direct comparison with the experimental data of Cass\ue9 et al. points out that for realistic interfacial layer thicknesses the effect of surface optical phonons on the mobility is very modest, and that the measured mobility reduction can be attributed to remote Coulomb scattering of charge in the gate-stack with concentrations in the order of 10^14 cm-2. We found that the drain current reduction in short channel devices is, instead, not as strong as the mobility reduction

Condensation Reaction Between \u3b1-Amino Acid Phenylhydrazides and Carbonyl Compounds

The natural \u3b1-amino acid phenylhydrazides 1a-d readily react with the aldehydes 2a-d and ketones 2e-h to produce the 3-(phenylamino)imidazolidin-4-one derivatives 4 in good yields. Their structures were confirmed by X-ray structural analysis. Polycyclic systems were obtained from the reaction of L-tryptophan phenylhydrazide (1d) and L-histidine phenylhydrazide (1e) with benzaldehyde (2c), which gave 1,10-diphenyl-2-(phenylamino)-2,9,10a-triazacyclopenta[b]fluoren-3-one (5dc) and 4,6-diphenyl-7-(phenylamino)-3,4,6,7,8a,9-hexahydro-8H-diimidazo [1,5-a:4\u2032,5\u2032-d]pyridin-8-one (5ec), respectively