405 research outputs found
More Evidence for a Distribution of Tunnel Splittings in Mn-acetate
In magnetic fields applied parallel to the anisotropy axis, the magnetization
of Mn has been measured in response to a field that is swept back and
forth across the resonances corresponding to steps . The fraction
of molecules remaining in the metastable well after each sweep through the
resonance is inconsistent with expectations for an ensemble of identical
molecules. The data are consistent instead with the presence of a broad
distribution of tunnel splittings. A very good fit is obtained for a Gaussian
distribution of the second-order anisotropy tunneling parameter . We show that dipolar shuffling is a negligible effect which cannot
explain our data.Comment: minor corrections (PACS nos, signs in Fig. 2
Small Angle Shubnikov-de Haas Measurements in Silicon MOSFET's: the Effect of Strong In-Plane Magnetic Field
Measurements in magnetic fields applied at small angles relative to the
electron plane in silicon MOSFETs indicate a factor of two increase of the
frequency of Shubnikov-de Haas oscillations at H>H_{sat}. This signals the
onset of full spin polarization above H_{sat}, the parallel field above which
the resistivity saturates to a constant value. For H<H_{sat}, the phase of the
second harmonic of the oscillations relative to the first is consistent with
scattering events that depend on the overlap instead of the sum of the spin-up
and spin-down densities of states.Comment: 4 pages; figures now inserted in text; additional referenc
Non-Equilibrium Dynamics and Superfluid Ring Excitations in Binary Bose-Einstein Condensates
We revisit a classic study [D. S. Hall {\it et al.}, Phys. Rev. Lett. {\bf
81}, 1539 (1998)] of interpenetrating Bose-Einstein condensates in the
hyperfine states and of Rb and observe striking new non-equilibrium
component separation dynamics in the form of oscillating ring-like structures.
The process of component separation is not significantly damped, a finding that
also contrasts sharply with earlier experimental work, allowing a clean first
look at a collective excitation of a binary superfluid. We further demonstrate
extraordinary quantitative agreement between theoretical and experimental
results using a multi-component mean-field model with key additional features:
the inclusion of atomic losses and the careful characterization of trap
potentials (at the level of a fraction of a percent).Comment: 4 pages, 3 figures (low res.), to appear in PR
Hall Coefficient of a Dilute 2D Electron System in Parallel Magnetic Field
Measurements in magnetic fields applied at a small angle with respect to the
2D plane of the electrons of a low-density silicon MOSFET indicate that the
Hall coefficient is independent of parallel field from H=0 to , the
field above which the longitudinal resistance saturates and the electrons have
reached full spin-polarization. This implies that the mobilities of the spin-up
and spin-down electrons remain comparable at all magnetic fields, and suggests
there is strong mixing of spin-up and spin-down electron states.Comment: 4 pages, 2 figure
Abrupt Transition between Thermally-Activated Relaxation and Quantum Tunneling in a Molecular Magnet
We report Hall sensor measurements of the magnetic relaxation of Mn
acetate as a function of magnetic field applied along the easy axis of
magnetization. Data taken at a series of closely-spaced temperatures between
0.24 K and 1.4 K provide strong new evidence for an abrupt ``first-order''
transition between thermally-assisted relaxation and magnetic decay via quantum
tunneling.Comment: 4 pages, including 7 figure
Temperature-Dependence of the Resistivity of a Dilute 2D Electron System in High Parallel Magnetic Field
We report measurements of the resistance of silicon MOSFETs as a function of
temperature in high parallel magnetic fields where the 2D system of electrons
has been shown to be fully spin-polarized. A magnetic field suppresses the
metallic behavior observed in the absence of a magnetic field. In a field of
10.8 T, insulating behavior is found for densities up to n_s approximately 1.35
x 10^{11} cm^{-2} or 1.5 n_c; above this density the resistance is a very weak
function of temperature, varying less than 10% between 0.25 K and 1.90 K. At
low densities the resistance goes to infinity more rapidly as the temperature
is reduced than in zero field and the magnetoresistance diverges as T goes to
0.Comment: 4 pages, including 4 figures. References adde
In-plane magnetic field-induced spin polarization and transition to insulating behavior in two-dimensional hole systems
Using a novel technique, we make quantitative measurements of the spin
polarization of dilute (3.4 to 6.8*10^{10} cm^{-2}) GaAs (311)A two-dimensional
holes as a function of an in-plane magnetic field. As the field is increased
the system gradually becomes spin polarized, with the degree of spin
polarization depending on the orientation of the field relative to the crystal
axes. Moreover, the behavior of the system turns from metallic to insulating
\textit{before} it is fully spin polarized. The minority-spin population at the
transition is ~8*10^{9} cm^{-2}, close to the density below which the system
makes a transition to an insulating state in the absence of a magnetic field.Comment: 4 pages with figure
Parallel Magnetic Field Induced Transition in Transport in the Dilute Two-Dimensional Hole System in GaAs
A magnetic field applied parallel to the two-dimensional hole system in the
GaAs/AlGaAs heterostructure, which is metallic in the absence of an external
magnetic field, can drive the system into insulating at a finite field through
a well defined transition. The value of resistivity at the transition is found
to depend strongly on density
Metal-insulator transition in a 2D electron gas: Equivalence of two approaches for determining the critical point
The critical electron density for the metal-insulator transition in a
two-dimensional electron gas can be determined by two distinct methods: (i) a
sign change of the temperature derivative of the resistance, and (ii) vanishing
activation energy and vanishing nonlinearity of current-voltage characteristics
as extrapolated from the insulating side. We find that in zero magnetic field
(but not in the presence of a parallel magnetic field), both methods give
equivalent results, adding support to the existence of a true zero-field
metal-insulator transition.Comment: As publishe
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