An optical fiber-taper probe for wafer-scale microphotonic device characterization

A small depression is created in a straight optical fiber taper to form a local probe suitable for studying closely spaced, planar microphotonic devices. The tension of the "dimpled" taper controls the probe-sample interaction length and the level of noise present during coupling measurements. Practical demonstrations with high-Q silicon microcavities include testing a dense array of undercut microdisks (maximum Q = 3.3x10^6) and a planar microring (Q = 4.8x10^6).Comment: 8 pages, 5 figures, for high-res version see http://copilot.caltech.edu/publications/index.ht

Adiabatic self-tuning in a silicon microdisk optical resonator

We demonstrate a method for adiabatically self-tuning a silicon microdisk resonator. This mechanism is not only able to sensitively probe the fast nonlinear cavity dynamics, but also provides various optical functionalities like pulse compression, shaping, and tunable time delay

Surface Encapsulation for Low-Loss Silicon Photonics

Encapsulation layers are explored for passivating the surfaces of silicon to reduce optical absorption in the 1500-nm wavelength band. Surface-sensitive test structures consisting of microdisk resonators are fabricated for this purpose. Based on previous work in silicon photovoltaics, coatings of SiNx and SiO2 are applied under varying deposition and annealing conditions. A short dry thermal oxidation followed by a long high-temperature N2 anneal is found to be most effective at long-term encapsulation and reduction of interface absorption. Minimization of the optical loss is attributed to simultaneous reduction in sub-bandgap silicon surface states and hydrogen in the capping material.Comment: 4 pages, 3 figure

A proposal for highly tunable optical parametric oscillation in silicon micro-resonators

We propose a novel scheme for continuous-wave pumped optical parametric oscillation (OPO) inside silicon micro-resonators. The proposed scheme not only requires a relative low lasing threshold, but also exhibits extremely broad tunability extending from the telecom band to mid infrared

High temperature cavity polaritons in epitaxial Er_2O_3 on silicon

Cavity polaritons around two Er^(3+) optical transitions are observed in microdisk resonators fabricated from epitaxial Er_2O_3 on Si(111). Using a pump-probe method, spectral anticrossings and linewidth averaging of the polariton modes are measured in the cavity transmission and luminescence at temperatures above 361 K

On the dynamic tensile strength of Zirconium

Despite its fundamental nature, the process of dynamic tensile failure (spall) is poorly understood. Spall initiation via cracks, voids, etc, before subsequent coalesce, is known to be highly microstructure-dependant. In particular, the availability of slip planes and other methods of plastic deformation controls the onset (or lack thereof) of spall. While studies have been undertaken into the spall response of BCC and FCC materials, less attention has paid to the spall response of highly anisotropic HCP materials. Here the dynamic behaviour of zirconium is investigated via plate-impact experiments, with the aim of building on an ongoing in-house body of work investigating these highly complex materials. In particular, in this paper the effect of impact stress on spall in a commercially sourced Zr rod is considered, with apparent strain-rate softening highlighted

Wavelength- and material-dependent absorption in GaAs and AlGaAs microcavities

The quality factors of modes in nearly identical GaAs and Al_{0.18}Ga_{0.82}As microdisks are tracked over three wavelength ranges centered at 980 nm, 1460 nm, and 1600 nm, with quality factors measured as high as 6.62x10^5 in the 1600-nm band. After accounting for surface scattering, the remaining loss is due to sub-bandgap absorption in the bulk and on the surfaces. We observe the absorption is, on average, 80 percent greater in AlGaAs than in GaAs and in both materials is 540 percent higher at 980 nm than at 1600nm.Comment: 4 pages, 2 figures, 1 table, minor changes to disucssion of Qrad and Urbach tai

Superradiance for atoms trapped along a photonic crystal waveguide

We report observations of superradiance for atoms trapped in the near field of a photonic crystal waveguide (PCW). By fabricating the PCW with a band edge near the D$_1$ transition of atomic cesium, strong interaction is achieved between trapped atoms and guided-mode photons. Following short-pulse excitation, we record the decay of guided-mode emission and find a superradiant emission rate scaling as $\bar{\Gamma}_{\rm SR}\propto\bar{N}\cdot\Gamma_{\rm 1D}$ for average atom number $0.19 \lesssim \bar{N} \lesssim 2.6$ atoms, where $\Gamma_{\rm 1D}/\Gamma_0 =1.1\pm0.1$ is the peak single-atom radiative decay rate into the PCW guided mode and $\Gamma_{0}$ is the Einstein-$A$ coefficient for free space. These advances provide new tools for investigations of photon-mediated atom-atom interactions in the many-body regime.Comment: 11 pages, 10 figure

Growth, processing, and optical properties of epitaxial Er_2O_3 on silicon

Erbium-doped materials have been investigated for generating and amplifying light in low-power chip-scale optical networks on silicon, but several effects limit their performance in dense microphotonic applications. Stoichiometric ionic crystals are a potential alternative that achieve an Er^(3+) density 100× greater. We report the growth, processing, material characterization, and optical properties of single-crystal Er_2O_3 epitaxially grown on silicon. A peak Er^(3+) resonant absorption of 364 dB/cm at 1535nm with minimal background loss places a high limit on potential gain. Using high-quality microdisk resonators, we conduct thorough C/L-band radiative efficiency and lifetime measurements and observe strong upconverted luminescence near 550 and 670 nm