Theory of spin-polarized scanning tunneling microscopy applied to local spins

We provide a theory for scanning tunneling microscopy and spectroscopy using a spin-polarized tip. It it shown that the tunneling conductance can be partitioned into three separate contributions, a background conductance which is independent of the local spin, a dynamical conductance which is proportional to the local spin moment, and a conductance which is proportional to the noise spectrum of the local spin interactions. The presented theory is applicable to setups with magnetic tip and substrate in non-collinear arrangement, as well as for non-magnetic situations. The partitioning of the tunneling current suggests a possibility to extract the total spin moment of the local spin from the dynamical conductance. The dynamical conductance suggests a possibility to generate very high frequency spin-dependent ac currents and/or voltages. We also propose a measurement of the dynamical conductance that can be used to determine the character of the effective exchange interaction between individual spins in clusters. The third contribution to the tunneling current is associated with the spin-spin correlations induced by the exchange interaction between the local spin moment and the tunneling electrons. We demonstrate how this term can be used in the analysis of spin excitations recorded in conductance measurements. Finally, we propose to use spin-polarized scanning tunneling microscopy for detailed studies of the spin excitation spectrum.Comment: 12 pages, 4 figure, updated to match the published version, to appear in the Phys. Rev.

Atomistic spin dynamics of the CuMn spin glass alloy

We demonstrate the use of Langevin spin dynamics for studying dynamical properties of an archetypical spin glass system. Simulations are performed on CuMn (20% Mn) where we study the relaxation that follows a sudden quench of the system to the low temperature phase. The system is modeled by a Heisenberg Hamiltonian where the Heisenberg interaction parameters are calculated by means of first-principles density functional theory. Simulations are performed by numerically solving the Langevin equations of motion for the atomic spins. It is shown that dynamics is governed, to a large degree, by the damping parameter in the equations of motion and the system size. For large damping and large system sizes we observe the typical aging regime.Comment: 18 pages, 9 figure

Universal distribution of magnetic anisotropy of impurities in ordered and disordered nano-grains

We examine the distribution of the magnetic anisotropy (MA) experienced by a magnetic impurity embedded in a metallic nano-grain. As an example of a generic magnetic impurity with partially filled $d$-shell, we study the case of $d^{1}$ impurities imbedded into ordered and disordered Au nano-grains, described in terms of a realistic band structure. Confinement of the electrons induces a magnetic anisotropy that is large, and can be characterized by 5 real parameters, coupling to the quadrupolar moments of the spin. In ordered (spherical) nano-grains, these parameters exhibit symmetrical structures and reflect the symmetry of the underlying lattice, while for disordered grains they are randomly distributed and, - for stronger disorder, - their distribution is found to be characterized by random matrix theory. As a result, the probability of having small magnetic anisotropies $K_L$ is suppressed below a characteristic scale $\Delta_E$, which we predict to scale with the number of atoms $N$ as $\Delta_E\sim 1/N^{3/2}$. This gives rise to anomalies in the specific heat and the susceptibility at temperatures $T\sim \Delta_E$ and produces distinct structures in the magnetic excitation spectrum of the clusters, that should be possible to detect experimentally

Simulation of hydrogenated graphene Field-Effect Transistors through a multiscale approach

In this work, we present a performance analysis of Field Effect Transistors based on recently fabricated 100% hydrogenated graphene (the so-called graphane) and theoretically predicted semi-hydrogenated graphene (i.e. graphone). The approach is based on accurate calculations of the energy bands by means of GW approximation, subsequently fitted with a three-nearest neighbor (3NN) sp3 tight-binding Hamiltonian, and finally used to compute ballistic transport in transistors based on functionalized graphene. Due to the large energy gap, the proposed devices have many of the advantages provided by one-dimensional graphene nanoribbon FETs, such as large Ion and Ion/Ioff ratios, reduced band-to-band tunneling, without the corresponding disadvantages in terms of prohibitive lithography and patterning requirements for circuit integration

Dynamics of diluted magnetic semiconductors from atomistic spin dynamics simulations: Mn doped GaAs as a case study

The dynamical behavior of the magnetism of diluted magnetic semiconductors (DMS) has been investigated by means of atomistic spin dynamics simulations. The conclusions drawn from the study are argued to be general for DMS systems in the low concentration limit, although all simulations are done for 5% Mn-doped GaAs with various concentrations of As antisite defects. The magnetization curve, $M(T)$, and the Curie temperature $T_C$ have been calculated, and are found to be in good correspondence to results from Monte Carlo simulations and experiments. Furthermore, equilibrium and non-equilibrium behavior of the magnetic pair correlation function have been extracted. The dynamics of DMS systems reveals a substantial short ranged magnetic order even at temperatures at or above the ordering temperature, with a non-vanishing pair correlation function extending up to several atomic shells. For the high As antisite concentrations the simulations show a short ranged anti-ferromagnetic coupling, and a weakened long ranged ferromagnetic coupling. For sufficiently large concentrations we do not observe any long ranged ferromagnetic correlation. A typical dynamical response shows that starting from a random orientation of moments, the spin-correlation develops very fast ($\sim$ 1ps) extending up to 15 atomic shells. Above $\sim$ 10 ps in the simulations, the pair correlation is observed to extend over some 40 atomic shells. The autocorrelation function has been calculated and compared with ferromagnets like bcc Fe and spin-glass materials. We find no evidence in our simulations for a spin-glass behaviour, for any concentration of As antisites. Instead the magnetic response is better described as slow dynamics, at least when compared to that of a regular ferromagnet like bcc Fe.Comment: 24 pages, 15 figure

Fe/V and Fe/Co (001) superlattices: growth, anisotropy, magnetisation and magnetoresistance

Some physical properties of bcc Fe/V and Fe/Co (001) superlattices are reviewed. The dependence of the magnetic anisotropy on the in-plane strain introduced by the lattice mismatch between Fe and V is measured and compared to a theoretical derivation. The dependence of the magnetic anisotropy (and saturation magnetisation) on the layer thickness ratio Fe/Co is measured and a value for the anisotropy of bcc Co is derived from extrapolation. The interlayer exchange coupling of Fe/V superlattices is studied as a function of the layer thickness V (constant Fe thickness) and layer thickness of Fe (constant V thickness). A region of antiferromagnetic coupling and GMR is found for V thicknesses 12-14 monolayers. However, surprisingly, a 'cutoff' of the antiferromagnetic coupling and GMR is found when the iron layer thickness exceeds about 10 monolayers.Comment: Proceedings of the International Symposium on Advanced Magnetic Materials (ISAMM'02), October 2-4, 2002, Halong Bay, Vietnam. REVTeX style; 4 pages, 5 figure

Electron correlations in Mnx_xGa1−x_{1-x}As as seen by resonant electron spectroscopy and dynamical mean field theory

After two decades from the discovery of ferromagnetism in Mn-doped GaAs, its origin is still debated, and many doubts are related to the electronic structure. Here we report an experimental and theoretical study of the valence electron spectrum of Mn-doped GaAs. The experimental data are obtained through the differences between off- and on-resonance photo-emission data. The theoretical spectrum is calculated by means of a combination of density-functional theory in the local density approximation and dynamical mean-field theory (LDA+DMFT), using exact diagonalisation as impurity solver. Theory is found to accurately reproduce measured data, and illustrates the importance of correlation effects. Our results demonstrate that the Mn states extend over a broad range of energy, including the top of the valence band, and that no impurity band splits off from the valence band edge, while the induced holes seem located primarily around the Mn impurity.Comment: 5 pages, 4 figure