Influence of reactive ion etching on the minority carrier lifetime in P-type Si

Quasi-steady-state photoconductance (QSSPC) and deep level transient spectroscopy (DLTS) were used to characterize the recombination properties of reactive ion etched p-type Si. The effective lifetime of the plasma-processed samples degraded after etching, with the densities of recombination centers increasing linearly with etch time, before reaching a plateau. Evidence is provided for the long-range (> 2 µm) migration of defects in the samples plasma-etched at room temperature. The relationship between rf power and lifetime degradation is also discussed. A defect with energy position at (0.31 ± 0.02) eV was detected by DLTS in RIE p-Si, whereas no defect level was measured in n-type Si. We demonstrate that this energy level could be used to adequately model the injection-dependence of the measured carrier lifetimes using the Shockley-Read-Hall model