433 research outputs found
Universality in an integer Quantum Hall transition
An integer Quantum Hall effect transition is studied in a modulation doped
p-SiGe sample. In contrast to most examples of such transitions the
longitudinal and Hall conductivities at the critical point are close to 0.5 and
1.5 (e^2/h), the theoretically expected values. This allows the extraction of a
scattering parameter, describing both conductivity components, which depends
exponentially on filling factor. The strong similarity of this functional form
to those observed for transitions into the Hall insulating state and for the
B=0 metal- insulator transition implies a universal quantum critical behaviour
for the transitions. The observation of this behaviour in the integer Quantum
Hall effect, for this particular sample, is attributed to the short-ranged
character of the potential associated with the dominant scatterers
Metal Insulator transition at B=0 in p-SiGe
Observations are reported of a metal-insulator transition in a 2D hole gas in
asymmetrically doped strained SiGe quantum wells. The metallic phase, which
appears at low temperatures in these high mobility samples, is characterised by
a resistivity that decreases exponentially with decreasing temperature. This
behaviour, and the duality between resistivity and conductivity on the two
sides of the transition, are very similar to that recently reported for high
mobility Si-MOSFETs.Comment: 4 pages, REVTEX with 3 ps figure
The effect of oscillating Fermi energy on the line shape of the Shubnikov-de Haas oscillation in a two dimensional electron gas
The line shape of the Shubnikov-de Haas (SdH) oscillation has been analyzed
in detail for a GaAs/AlGaAs two-dimensional electron gas. The line shape, or
equivalently the behavior of the Fourier components, of the experimentally
observed SdH oscillation is well reproduced by the sinusoidal density of states
at the Fermi energy that oscillates with a magnetic field in a saw-tooth shape
to keep the electron density constant. This suggests that the broadening of
each Landau level by disorder is better described by a Gaussian than by a
Lorentzian.Comment: 7 pages,6 figures, minor revision
Mobility-Dependence of the Critical Density in Two-Dimensional Systems: An Empirical Relation
For five different electron and hole systems in two dimensions (Si MOSFET's,
p-GaAs, p-SiGe, n-GaAs and n-AlAs), the critical density, that marks the
onset of strong localization is shown to be a single power-law function of the
scattering rate deduced from the maximum mobility. The resulting curve
defines the boundary separating a localized phase from a phase that exhibits
metallic behavior. The critical density in the limit of infinite
mobility.Comment: 2 pages, 1 figur
The Quantum Hall Effect and Inter-edge State Tunneling Within a Barrier
We have introduced a controllable nano-scale incursion into a potential
barrier imposed across a two-dimensional electron gas, and report on the
phenomena that we observe as the incursion develops. In the quantum Hall
regime, the conductance of this system displays quantized plateaus, broad
minima and oscillations. We explain these features and their evolution with
electrostatic potential geometry and magnetic field as a progression of current
patterns formed by tunneling between edge and localized states within the
barrier.Comment: RevTeX + 4 postscript figures. Self-unpacking uuencoded files.
Unpacking instructions are at the beginning of the files. To appear in
Physical Review
Composite fermions in periodic and random antidot lattices
The longitudinal and Hall magnetoresistance of random and periodic arrays of artificial scatterers, imposed on a high-mobility two-dimensional electron gas, were investigated in the vicinity of Landau level filling factor ν=1/2. In periodic arrays, commensurability effects between the period of the antidot array and the cyclotron radius of composite fermions are observed. In addition, the Hall resistance shows a deviation from the anticipated linear dependence, reminiscent of quenching around zero magnetic field. Both effects are absent for random antidot lattices. The relative amplitude of the geometric resonances for opposite signs of the effective magnetic field and its dependence on illumination illustrate enhanced soft wall effects for composite fermions
Magnetoresistivity in a Tilted Magnetic Field in p-Si/SiGe/Si Heterostructures with an Anisotropic g-Factor: Part II
The magnetoresistance components and were measured in
two p-Si/SiGe/Si quantum wells that have an anisotropic g-factor in a tilted
magnetic field as a function of temperature, field and tilt angle. Activation
energy measurements demonstrate the existence of a ferromagnetic-paramagnetic
(F-P) transition for a sample with a hole density of
=2\,cm. This transition is due to crossing of the
0 and 1 Landau levels. However, in another sample, with
=7.2\,cm, the 0 and 1 Landau
levels coincide for angles =0-70. Only for >
70 do the levels start to diverge which, in turn, results in the
energy gap opening.Comment: 5 pages, 6 figure
"Forbidden" transitions between quantum Hall and insulating phases in p-SiGe heterostructures
We show that in dilute metallic p-SiGe heterostructures, magnetic field can
cause multiple quantum Hall-insulator-quantum Hall transitions. The insulating
states are observed between quantum Hall states with filling factors \nu=1 and
2 and, for the first time, between \nu=2 and 3 and between \nu=4 and 6. The
latter are in contradiction with the original global phase diagram for the
quantum Hall effect. We suggest that the application of a (perpendicular)
magnetic field induces insulating behavior in metallic p-SiGe heterostructures
in the same way as in Si MOSFETs. This insulator is then in competition with,
and interrupted by, integer quantum Hall states leading to the multiple
re-entrant transitions. The phase diagram which accounts for these transition
is similar to that previously obtained in Si MOSFETs thus confirming its
universal character
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