Novel Phenomena in Dilute Electron Systems in Two Dimensions

We review recent experiments that provide evidence for a transition to a conducting phase in two dimensions at very low electron densities. The nature of this phase is not understood, and is currently the focus of intense theoretical and experimental attention.Comment: To appear as a Perspective in the Proceedings of the National Academy of Sciences. Reference to Chakravarty, Kivelson, Nayak, and Voelker's paper added (Phil. Mag., in press

The Nature of Quantum Hall States near the Charge Neutral Dirac Point in Graphene

We investigate the quantum Hall (QH) states near the charge neutral Dirac point of a high mobility graphene sample in high magnetic fields. We find that the QH states at filling factors $\nu=\pm1$ depend only on the perpendicular component of the field with respect to the graphene plane, indicating them to be not spin-related. A non-linear magnetic field dependence of the activation energy gap at filling factor $\nu=1$ suggests a many-body origin. We therefore propose that the $\nu=0$ and $\pm1$ states arise from the lifting of the spin and sub-lattice degeneracy of the $n=0$ LL, respectively.Comment: 4 pages, 4 figures, to appear in Phys. Rev. Let

Formation of a high quality two-dimensional electron gas on cleaved GaAs

We have succeeded in fabricating a two-dimensional electron gas (2DEG) on the cleaved (110) edge of a GaAs wafer by molecular beam epitaxy (MBE). A (100) wafer previously prepared by MBE growth is reinstalled in the MBE chamber so that an in situ cleave exposes a fresh (110) GaAs edge for further MBE overgrowth. A sequence of Si-doped AlGaAs layers completes the modulation-doped structure at the cleaved edge. Mobilities as high as 6.1×10^5 cm^2/V s are measured in the 2DEG at the cleaved interface

Single-Walled Carbon Nanotubes as Shadow Masks for Nanogap Fabrication

We describe a technique for fabricating nanometer-scale gaps in Pt wires on insulating substrates, using individual single-walled carbon nanotubes as shadow masks during metal deposition. More than 80% of the devices display current-voltage dependencies characteristic of direct electron tunneling. Fits to the current-voltage data yield gap widths in the 0.8-2.3 nm range for these devices, dimensions that are well suited for single-molecule transport measurements

Suppression of hole-hole scattering in GaAs/AlGaAs heterostructures under uniaxial compression

Resistance, magnetoresistance and their temperature dependencies have been investigated in the 2D hole gas at a [001] p-GaAs/Al$_{0.5}$Ga$_{0.5}$As heterointerface under [110] uniaxial compression. Analysis performed in the frame of hole-hole scattering between carriers in the two spin splitted subbands of the ground heavy hole state indicates, that h-h scattering is strongly suppressed by uniaxial compression. The decay time $\tau_{01}$ of the relative momentum reveals 4.5 times increase at a uniaxial compression of 1.3 kbar.Comment: 5 pages, 3 figures. submitted to Phys.Rev.

Infrared spectroscopy of Landau levels in graphene

We report infrared studies of the Landau level (LL) transitions in single layer graphene. Our specimens are density tunable and show \textit{in situ} half-integer quantum Hall plateaus. Infrared transmission is measured in magnetic fields up to B=18 T at selected LL fillings. Resonances between hole LLs and electron LLs, as well as resonances between hole and electron LLs are resolved. Their transition energies are proportional to $\sqrt{B}$ and the deduced band velocity is $\tilde{c}\approx1.1\times10^6$ m/s. The lack of precise scaling between different LL transitions indicates considerable contributions of many-particle effects to the infrared transition energies.Comment: 4 pages, 3 figures, to appear in Phys. Rev. Let

Measurement of Scattering Rate and Minimum Conductivity in Graphene

The conductivity of graphene samples with various levels of disorder is investigated for a set of specimens with mobility in the range of $1-20\times10^3$ cm$^2$/V sec. Comparing the experimental data with the theoretical transport calculations based on charged impurity scattering, we estimate that the impurity concentration in the samples varies from $2-15\times 10^{11}$ cm$^{-2}$. In the low carrier density limit, the conductivity exhibits values in the range of $2-12e^2/h$, which can be related to the residual density induced by the inhomogeneous charge distribution in the samples. The shape of the conductivity curves indicates that high mobility samples contain some short range disorder whereas low mobility samples are dominated by long range scatterers.Comment: 4 pages 4 figure

Evidence for Skyrmion crystallization from NMR relaxation experiments

A resistively detected NMR technique was used to probe the two-dimensional electron gas in a GaAs/AlGaAs quantum well. The spin-lattice relaxation rate $(1/T_{1})$ was extracted at near complete filling of the first Landau level by electrons. The nuclear spin of $^{75}$As is found to relax much more efficiently with $T\to 0$ and when a well developed quantum Hall state with $R_{xx}\simeq 0$ occurs. The data show a remarkable correlation between the nuclear spin relaxation and localization. This suggests that the magnetic ground state near complete filling of the first Landau level may contain a lattice of topological spin texture, i.e. a Skyrmion crystal

Interaction-induced shift of the cyclotron resonance of graphene using infrared spectroscopy

We report a study of the cyclotron resonance (CR) transitions to and from the unusual $n=0$ Landau level (LL) in monolayer graphene. Unexpectedly, we find the CR transition energy exhibits large (up to 10%) and non-monotonic shifts as a function of the LL filling factor, with the energy being largest at half-filling of the $n=0$ level. The magnitude of these shifts, and their magnetic field dependence, suggests that an interaction-enhanced energy gap opens in the $n=0$ level at high magnetic fields. Such interaction effects normally have limited impact on the CR due to Kohn's theorem [W. Kohn, Phys. Rev. {\bf 123}, 1242 (1961)], which does not apply in graphene as a consequence of the underlying linear band structure.Comment: 4 pages, 4 figures. Version 2, edited for publication. Includes a number of edits for clarity; also added a paragraph contrasting our work w/ previous CR expts. in 2D Si and GaA