445 research outputs found

    Electrical properties of silicon-implanted furnace-annealed silicon-on-sapphire devices

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    The crystalline quality of s.o.s. layers can be improved near the silicon-sapphire interface by silicon implantation followed by recrystallisation. Device performance on such layers is markedly improved as to n-channel m.o.s.t. noise and leakage current, reverse diode current and lateral bipolar transistor gain. Minority-carrier lifetimes up to 50 ns are deduced

    EUV Spectroscopy of Highly Charged Xenon Ions

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    Noise sensitivity of an atomic velocity sensor

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    We use Bloch oscillations to accelerate coherently Rubidium atoms. The variation of the velocity induced by this acceleration is an integer number times the recoil velocity due to the absorption of one photon. The measurement of the velocity variation is achieved using two velocity selective Raman pi-pulses: the first pulse transfers atoms from the hyperfine state 5S1/2 |F=2, mF=0> to 5S1/2, |F=1, mF = 0> into a narrow velocity class. After the acceleration of this selected atomic slice, we apply the second Raman pulse to bring the resonant atoms back to the initial state 5S1/2, |F=2, mF = 0>. The populations in (F=1 and F=2) are measured separately by using a one-dimensional time-of-flight technique. To plot the final velocity distribution we repeat this procedure by scanning the Raman beam frequency of the second pulse. This two pi-pulses system constitutes then a velocity sensor. Any noise in the relative phase shift of the Raman beams induces an error in the measured velocity. In this paper we present a theoretical and an experimental analysis of this velocity sensor, which take into account the phase fluctuations during the Raman pulses

    Laser annealing of silicon on sapphire

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    Silicon-implanted silicon-on-sapphire wafers have been annealed by 50-ns pulses from a Q-switched Nd : YAG laser. The samples have been analyzed by channeling and by omega-scan x-ray double diffraction. After irradiation with pulses of a fluence of about 5 J cm^–2 the crystalline quality of the silicon layer is found to be better than in the as-grown state

    A theory for magnetic-field effects of nonmagnetic organic semiconducting materials

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    A universal mechanism for strong magnetic-field effects of nonmagnetic organic semiconductors is presented. A weak magnetic field (less than hundreds mT) can substantially change the charge carrier hopping coefficient between two neighboring organic molecules when the magnetic length is not too much longer than the molecule-molecule separation and localization length of electronic states involved. Under the illumination of lights or under a high electric field, the change of hopping coefficients leads also to the change of polaron density so that photocurrent, photoluminescence, electroluminescence, magnetoresistance and electrical-injection current become sensitive to a weak magnetic field. The present theory can not only explain all observed features, but also provide a solid theoretical basis for the widely used empirical fitting formulas.Comment: 4 pages, 2 figure

    Generation of Squeezing in Higher Order Hermite-Gaussian Modes with an Optical Parametric Amplifier

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    We demonstrate quantum correlations in the transverse plane of continuous wave light beams by producing -4.0 dB, -2.6 dB and -1.5 dB of squeezing in the TEM00, TEM10 and TEM20 Hermite- Gauss modes with an optical parametric amplifier, respectively. This has potential applications in quantum information networking, enabling parallel quantum information processing. We describe the setup for the generation of squeezing and analyze the effects of various experimental issues such as mode overlap between pump and seed and nonlinear losses.Comment: 7 pages, 4 figure

    A constraint on antigravity of antimatter from precision spectroscopy of simple atoms

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    Consideration of antigravity for antiparticles is an attractive target for various experimental projects. There are a number of theoretical arguments against it but it is not quite clear what kind of experimental data and theoretical suggestions are involved. In this paper we present straightforward arguments against a possibility of antigravity based on a few simple theoretical suggestions and some experimental data. The data are: astrophysical data on rotation of the Solar System in respect to the center of our galaxy and precision spectroscopy data on hydrogen and positronium. The theoretical suggestions for the case of absence of the gravitational field are: equality of electron and positron mass and equality of proton and positron charge. We also assume that QED is correct at the level of accuracy where it is clearly confirmed experimentally
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