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2 research outputs found
Electrical and carrier transport properties of the Au/Y2O3/n-GaN metal-insulator-semiconductor (MIS) diode with rare-earth oxide interlayer
Author
A Turt
ARV Roberts
+39Â more
C Liao
C. Venkata Prasad
Chel-Jong Choi
D Mistele
H Norde
H Zhang
HC Card
HJ Quah
HJ Quah
J Kwo
J Moon
JT Lue
K Cico
M Drechsler
M Saglam
MS Tyagi
O Gullu
P Chattopadyay
P Prabhu Thapaswini
R Khanna
RT Tung
S Nakamura
SH Kim
SK Cheung
SM Sze
V Janardhanam
V Rajagopal Reddy
V Rajagopal Reddy
V Rajagopal Reddy
V Rajagopal Reddy
V Rajagopal Reddy
V Rajagopal Reddy
V. Rajagopal Reddy
WH Chang
WH Chang
XJ Wang
Y Irokawa
Z Khurelbaatar
ZZ Bandic
Publication venue
'Springer Science and Business Media LLC'
Publication date
Field of study
No full text
Crossref
Modified Interface Properties of Au/n-type GaN Schottky Junction with a High-k Ba0.6Sr0.4TiO3 Insulating Layer
Author
A Ashok Kumar
A Das
+42Â more
A Shetty
AS Raid
C Venkata Prasad
EH Rhoderick
FH Chen
H Norde
H Xu
H-S Kang
HC Card
JH Werner
JL Her
K. R. Gunasekhar
KH Goh
M Asif Khan
M Asif Khan
MD Losego
MSP Reddy
MT Danielle
P Irvin
P Prabhu Thapaswini
PJ Hansen
R Padma
RT Tung
RT Tung
S Karatas
S Pearton
SA Lee
SB Herner
SK Cheung
TTA Tuan
TU Kampen
V Rajagopal
V Rajagopal
V Rajagopal Reddy
V Rajagopal Reddy
V Rajagopal Reddy
V Rajagopal Reddy
V Rajagopal Reddy
Varra Niteesh Reddy
W Monch
WH Chang
YC Chang
Publication venue
'Springer Science and Business Media LLC'
Publication date
Field of study
No full text
Crossref
No full text
