Precision determination of band offsets in strained InGaAs/GaAs quantum wells by C-V-profiling and Schroedinger-Poisson self-consistent simulation

The results of measurements and numerical simulation of charge carrier distribution and energy states in strained quantum wells In_xGa_{1-x}As/GaAs (0.06 < x < 0.29) by C-V-profiling are presented. Precise values of conduction band offsets for these pseudomorphic QWs have been obtained by means of self-consistent solution of Schroedinger and Poisson equations and following fitting to experimental data. For the conduction band offsets in strained In_xGa_{1-x}As/GaAs - QWs the expression DE_C(x) = 0.814x - 0.21x^2 has been obtained.Comment: 9 pages, 12 figures, RevTeX

The Extracellular Domain of Human High Affinity Copper Transporter (hNdCTR1), Synthesized by E. coli Cells, Chelates Silver and Copper Ions In Vivo

There is much interest in effective copper chelators to correct copper dyshomeostasis in neurodegenerative and oncological diseases. In this study, a recombinant fusion protein for expression in Escherichia coli cells was constructed from glutathione-S-transferase (GST) and the N-terminal domain (ectodomain) of human high affinity copper transporter CTR1 (hNdCTR1), which has three metal-bound motifs. Several biological properties of the GST-hNdCTR1 fusion protein were assessed. It was demonstrated that in cells, the protein was prone to oligomerization, formed inclusion bodies and displayed no toxicity. Treatment of E. coli cells with copper and silver ions reduced cell viability in a dose- and time-dependent manner. Cells expressing GST-hNdCTR1 protein demonstrated resistance to the metal treatments. These cells accumulated silver ions and formed nanoparticles that contained AgCl and metallic silver. In this bacterial population, filamentous bacteria with a length of about 10 µm were often observed. The possibility for the fusion protein carrying extracellular metal binding motifs to integrate into the cell’s copper metabolism and its chelating properties are discussed

&quot;Emission of Electrons from the Ground and First Excited States of Self-Organized InAs/GaAs Quantum Dot Structures&quot; Emission of Electrons from the Ground and First Excited States of Self-Organized InAs/GaAs Quantum Dot Structures

Capacitance-and conductance-voltage studies have been carried out on Schottky barrier structures containing a sheet of self-organized InAs quantum dots. The dots are formed in GaAs n-type matrices after the deposition of four monolayers of InAs. Quasi-static analysis of capacitance-voltage measurements indicates that there are at least two filled electron levels in the quantum dots, located 60 and 140 meV below the GaAs conduction band edge. The conductance of the structure depends on the balance between measurement frequency and the thermionic emission rate of carriers from the quantum dots. An investigation of the temperature-dependent conductance at different frequencies as a function of the reverse bias allows us to study separately the electron emission rates from the ground and first excited levels in the quantum dots. We estimate that the electron escape times from both levels of the quantum dots become comparable at room temperature and equal to about 100 ps