10 research outputs found
The proton flux influence on electrical characteristics of a dual-channel hemt based on GaAs.
Get PDFThe results of the simulation the influence of the proton flux on the electrical characteristics of the device structure of dual-channel high electron mobility field effect transistor based on GaAs are presented. The dependences of the drain current ID and cut-off voltage on the fluence value and proton energy, as well as on the ambient temperature are shown.The results of the simulation the influence of the proton flux on the electrical characteristics of the device structure of dual-channel high electron mobility field effect transistor based on GaAs are presented. The dependences of the drain current ID and cut-off voltage on the fluence value and proton energy, as well as on the ambient temperature are shown
The proton flux influence on electrical characteristics of a dual-channel hemt based on GaAs
Get PDFThe results of the simulation the influence of the proton flux on the electrical characteristics of the device structure of dual-channel high electron mobility field effect transistor based on GaAs are presented. The dependences of the drain current ID and cut-off voltage on the fluence value and proton energy, as well as on the ambient temperature are shown
Interaction of internal waves with a horizontally inhomogeneous density field area overlying a ridge
No full textThe remainder term of a trigonometric interpolation expression for equally spaced nodes in spectral form
No full textProduction of high-current electron beams in an explosive-emission diode at gas pressures ∼ 10− 2–10−1 torr
No full textPhysicomechanical properties of cryptocrystalline fluorite from the Suran deposit, southern Urals
No full textFluid transfer of gold, palladium, and rare earth elements and genesis of ore occurrences in the Subpolar Urals
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