Dynamics of Charge Leakage From Self-assembled CdTe Quantum Dots

We study the leakage dynamics of charge stored in an ensemble of CdTe quantum dots embedded in a field-effect structure. Optically excited electrons are stored and read out by a proper time sequence of bias pulses. We monitor the dynamics of electron loss and find that the rate of the leakage is strongly dependent on time, which we attribute to an optically generated electric field related to the stored charge. A rate equation model quantitatively reproduces the results.Comment: 4 pages, submitted to Applied Physics Letter

Quantum interference in exciton-Mn spin interactions in a CdTe semiconductor quantum dot

We show theoretically and experimentally the existence of a new quantum interference(QI) effect between the electron-hole interactions and the scattering by a single Mn impurity. Theoretical model, including electron-valence hole correlations, the short and long range exchange interaction of Mn ion with the heavy hole and with electron and anisotropy of the quantum dot, is compared with photoluminescence spectroscopy of CdTe dots with single magnetic ions. We show how design of the electronic levels of a quantum dot enable the design of an exciton, control of the quantum interference and hence engineering of light-Mn interaction.Comment: 11 pages, 4 figures, submitted to PR

Optical manipulation of a single Mn spin in a CdTe-based quantum dot

A system of two coupled CdTe quantum dots, one of them containing a single Mn ion, was studied in continuous wave and modulated photoluminescence, photoluminescence excitation, and photon correlation experiments. Optical writing of information in the spin state of the Mn ion has been demonstrated, using orientation of the Mn spin by spin-polarized carriers transferred from the neighbor quantum dot. Mn spin orientation time values from 20 ns to 100 ns were measured, depending on the excitation power. Storage time of the information in the Mn spin was found to be enhanced by application of a static magnetic field of 1 T, reaching hundreds of microseconds in the dark. Simple rate equation models were found to describe correctly static and dynamical properties of the system.Comment: 4 pages, 3 figure

A micro-magneto-Raman scattering study of graphene on a bulk graphite substrate

We report on a magneto-Raman scattering study of graphene flakes located on the surface of a bulk graphite substrate. By spatially mapping the Raman scattering response of the surface of bulk graphite with an applied magnetic field, we pinpoint specific locations which show the electronic excitation spectrum of graphene. We present the characteristic Raman scattering signatures of these specific locations. We show that such flakes can be superimposed with another flake and still exhibit a graphene-like excitation spectrum. Two different excitation laser energies (514.5 and 720 nm) are used to investigate the excitation wavelength dependence of the electronic Raman scattering signal.Comment: 6 pages, 5 figure