Simulation Methodology for Electron Transfer in CMOS Quantum Dots

The construction of quantum computer simulators requires advanced software which can capture the most significant characteristics of the quantum behavior and quantum states of qubits in such systems. Additionally, one needs to provide valid models for the description of the interface between classical circuitry and quantum core hardware. In this study, we model electron transport in semiconductor qubits based on an advanced CMOS technology. Starting from 3D simulations, we demonstrate an order reduction and the steps necessary to obtain ordinary differential equations on probability amplitudes in a multi-particle system. We compare numerical and semi-analytical techniques concluding this paper by examining two case studies: the electron transfer through multiple quantum dots and the construction of a Hadamard gate simulated using a numerical method to solve the time-dependent Schrodinger equation and the tight-binding formalism for a time-dependent Hamiltonian

Noisy intermediate scale quantum computers: On the co-simulation of qubits and control electronics

In this paper, we discuss the challenges in modeling of Noisy Intermediate Scale Quantum Computers, in particular, those implementations that rely on integrated interface and control electronics. We begin with an overview of the current state of quantum computers and highlight the emergence of quantum engineering and its relation to electrical and electronic engineering. We then discuss qubit modeling and existing solutions. The particular example we focus on in this paper is related to semiconductor CMOS charge qubits. For this reason, we overview the physical models and equivalent circuit model of this type of qubits