Application of Liquid Laser Ablation: Organic Nanoparticle Formation and Hydrogen Gas Generation

Laser ablation is induced by a heating process of materials through the absorption of laser light and results in an explosive expansion of materials. For materials located in liquid, in contrast to those in vacuum, laser ablation proceeds under rather mild conditions via a cycle of heating and cooling by mediated solvent; therefore, it is applicable for organic solids to fragment into nanoparticles. Alternatively, for effective light absorbers, the irradiated site becomes the reaction centre of a photochemical reaction even in liquids, resulting in hydrogen gas generation. In this chapter, two topics of laser ablation in the liquid phase are presented: nanoparticle formation of organic materials and hydrogen gas generation from solid carbon in water. Thereby, the extended abilities of liquid laser ablation to transform ordinary materials into functional ones are introduced

Growth of quantum three-dimensional structure of InGaAs emitting at ~1 µm applicable for a broadband near-infrared light source

We obtained a high-intensity and broadband emission centered at ~1 µm from InGaAs quantum three-dimensional (3D) structures grown on a GaAs substrate using molecular beam epitaxy. An InGaAs thin layer grown on GaAs with a thickness close to the critical layer thickness is normally affected by strain as a result of the lattice mismatch and introduced misfit dislocations. However, under certain growth conditions for the In concentration and growth temperature, the growth mode of the InGaAs layer can be transformed from two-dimensional to 3D growth. We found the optimal conditions to obtain a broadband emission from 3D structures with a high intensity and controlled center wavelength at ~1 µm. This method offers an alternative approach for fabricating a broadband near-infrared light source for telecommunication and medical imaging systems such as for optical coherence tomography

Significant enhancement of ferromagnetism in Zn1−x_{1-x}Crx_{x}Te doped with iodine as an n-type dopant

The effect of additional doping of charge impurities was investigated in a ferromagnetic semiconductor Zn$_{1-x}$Cr$_{x}$Te. It was found that the doping of iodine, which is expected to act as an n-type dopant in ZnTe, brought about a drastic enhancement of the ferromagnetism in Zn$_{1-x}$Cr$_{x}$Te while the grown films remained electrically insulating. In particular, at a fixed Cr composition of x = 0.05, the ferromagnetic transition temperature Tc increased up to 300K at maximum due to the iodine doping from Tc = 30K of the undoped counterpart, while the ferromagnetism disappeared due to the doping of nitrogen as a p-type dopant. The observed systematic correlation of ferromagnetism with the doping of charge impurities of both p- and n-type, suggesting a key role of the position of Fermi level within the impurity d-state, is discussed on the basis of the double exchange interaction as a mechanism of ferromagnetism in this material.Comment: 5 figures, to be published in Phys. Rev. Let

Gallium Nitride Super-Luminescent Light Emitting Diodes for Optical Coherence Tomography Applications

The role of biasing of absorber sections in multi-contact GaN ~400nm SLEDs is discussed. We go on to assess such devices for OCT applications. Analysis of the SLED emission spectrum allows an axial resolution of 6.0μm to be deduced in OCT applications

Gallium nitride light sources for optical coherence tomography

The advent of optical coherence tomography (OCT) has permitted high-resolution, non-invasive, in vivo imaging of the eye, skin and other biological tissue. The axial resolution is limited by source bandwidth and central wavelength. With the growing demand for short wavelength imaging, super-continuum sources and non-linear fibre-based light sources have been demonstrated in tissue imaging applications exploiting the near-UV and visible spectrum. Whilst the potential has been identified of using gallium nitride devices due to relative maturity of laser technology, there have been limited reports on using such low cost, robust devices in imaging systems. A GaN super-luminescent light emitting diode (SLED) was first reported in 2009, using tilted facets to suppress lasing, with the focus since on high power, low speckle and relatively low bandwidth applications. In this paper we discuss a method of producing a GaN based broadband source, including a passive absorber to suppress lasing. The merits of this passive absorber are then discussed with regards to broad-bandwidth applications, rather than power applications. For the first time in GaN devices, the performance of the light sources developed are assessed though the point spread function (PSF) (which describes an imaging systems response to a point source), calculated from the emission spectra. We show a sub-7μm resolution is possible without the use of special epitaxial techniques, ultimately outlining the suitability of these short wavelength, broadband, GaN devices for use in OCT application

Growth of quantum three-dimensional structure of InGaAs emitting at ~1 µm applicable for a broadband near-infrared light source

We obtained a high-intensity and broadband emission centered at ~1 µm from InGaAs quantum three-dimensional (3D) structures grown on a GaAs substrate using molecular beam epitaxy. An InGaAs thin layer grown on GaAs with a thickness close to the critical layer thickness is normally affected by strain as a result of the lattice mismatch and introduced misfit dislocations. However, under certain growth conditions for the In concentration and growth temperature, the growth mode of the InGaAs layer can be transformed from two-dimensional to 3D growth. We found the optimal conditions to obtain a broadband emission from 3D structures with a high intensity and controlled center wavelength at ~1 µm. This method offers an alternative approach for fabricating a broadband near-infrared light source for telecommunication and medical imaging systems such as for optical coherence tomography

Psychosocial twin cohort studies in Japan: the Keio Twin Research Center (KoTReC)

The Keio Twin Research Center (KoTReC) was established in 2009 at Keio University to combine two longitudinal cohort projects — the Keio Twin Study (KTS) for adolescence and adulthood and the Tokyo Twin Cohort Project (ToTCoP) for infancy and childhood. KoTReC also conducted a two-time panel study of self-control and psychopathology in twin adolescence in 2012 and 2013 and three independent anonymous cross-sectional twin surveys (ToTcross) before 2012 — the ToTCross, the Junior and Senior High School Survey and the High School Survey. This article introduces the recent research designs of KoTReC and its publications

OCT with a Visible Broadband Light Source Applied to High-Resolution Nondestructive Inspection for Semiconductor Optical Devices

Optical coherence tomography with a visible broadband light source (vis-OCT) was developed for high-resolution and nondestructive measurements of semiconductor optical devices. Although a near-infrared (NIR) light source should be used for medical OCT to obtain deep penetration of biological samples, a visible broadband light source is available as a low-coherence light source for industrial products. Vis-OCT provides higher axial resolution than NIR-OCT, because the axial resolution of an OCT image is proportional to the square of the center wavelength of the light source. We developed vis-OCT with an axial resolution of less than 1 μm in air and obtained cross-sectional profiles and images of ridge-type waveguides having heights and widths of several μm. Additionally, we performed cross-sectional measurements and imaging of a stacked semiconductor thin layer. The measured values were similar to those measured by scanning electron microscopy, and the effectiveness of vis-OCT for nondestructive inspection of semiconductor optical devices was demonstrated

Development of a broadband superluminescent diode based on self-assembled InAs quantum dots and demonstration of high-axial-resolution optical coherence tomography imaging

We developed a near-infrared (NIR) superluminescent diode (SLD) based on self-assembled InAs quantum dots (QDs) and demonstrated high-axial-resolution optical coherence tomography (OCT) imaging using this QD-based SLD (QD-SLD). The QD-SLD utilized InAs QDs with controlled emission wavelengths as a NIR broadband light emitter, and a tilted waveguide with segmented electrodes was prepared for edge-emitting broadband electroluminescence (EL) spanning approximately 1–1.3 μm. The bandwidth of the EL spectrum was increased up to 144 nm at a temperature of 25 °C controlled using a thermoelectric cooler. The inverse Fourier transform of the EL spectrum predicted a minimum resolution of 3.6 μm in air. The QD-SLD was subsequently introduced into a spectral-domain (SD)-OCT setup, and SD-OCT imaging was performed for industrial and biological test samples. The OCT images obtained using the QD-SLD showed an axial resolution of ~4 μm, which was almost the same as that predicted from the spectrum. This axial resolution is less than the typical size of a single biological cell (~5 μm), and the practical demonstration of high-axial-resolution OCT imaging shows the application of QD-SLDs as a compact OCT light source, which enables the development of a portable OCT system