21 research outputs found

    Large internal dipole moment in InGaN/GaN quantum dots

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    This article may be downloaded for personal use only. Any other use requires prior permission of the author and AIP Publishing. This article appeared in Appl. Phys. Lett. 97, 063103 (2010) and may be found at https://doi.org/10.1063/1.3477952.Direct observation of large permanent dipole moments of excitonic complexes in InGaN/GaN quantum dots is reported. Characteristic traces of spectral diffusion, observed in cathodoluminescence of InGaN/GaN quantum dots, allow deducing the magnitude of the intrinsic dipole moment. Our experimental results are in good agreement with realistic calculations of quantum dot transition energies for position-dependent external electric fields.DFG, 43659573, SFB 787: Halbleiter - Nanophotonik: Materialien, Modelle, Bauelement

    Single-photon emission from InGaAs quantum dots grown on (111) GaAs

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    This article may be downloaded for personal use only. Any other use requires prior permission of the author and AIP Publishing. This article appeared in Appl. Phys. Lett. 96, 093112 (2010) and may be found at https://doi.org/10.1063/1.3337097.In this letter, we demonstrate that self-organized InGaAs quantum dots (QDs) grown on GaAs (111) substrate using droplet epitaxy have great potential for the generation of entangled photon pairs. The QDs show spectrally sharp luminescence lines and low spatial density. A second order correlation value of g(2)(0)<0.3 proves single-photon emission. By comparing the power dependence of the luminescence from a number of QDs we identify a typical luminescence fingerprint. In polarization dependent microphotoluminescence studies a fine-structure splitting ranging ≤40eV down to the determination limit of our setup (10eV) was observed.DFG, 43659573, SFB 787: Halbleiter - Nanophotonik: Materialien, Modelle, Bauelement

    Lateral positioning of InGaAs quantum dots using a buried stressor

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    This article may be downloaded for personal use only. Any other use requires prior permission of the author and AIP Publishing. This article appeared in Appl. Phys. Lett. 100, 093111 (2012) and may be found at https://doi.org/10.1063/1.3691251.We present a “bottom-up” approach for the lateral alignment of semiconductor quantum dots (QDs) based on strain-driven self-organization. A buried stressor formed by partial oxidation of (Al,Ga)As layers is employed in order to create a locally varying strain field at a GaAs(001) growth surface. During subsequent strained layer growth, local self-organization of (In,Ga)As QDs is controlled by the contour shape of the stressor. Large vertical separation of the QD growth plane from the buried stressor interface of 150 nm is achieved enabling high optical quality of QDs. Optical characterization confirms narrow QD emission lines without spectral diffusion.DFG, 43659573, SFB 787: Halbleiter - Nanophotonik: Materialien, Modelle, Bauelement

    Einfluss von Defekten von Phononen und von Verspannung auf die Lumineszenzeigenschaften der nitrid- und arsenidbasierten Quantenpunkte

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    Diese Arbeit stellt die Ergebnisse der experimentellen Untersuchungen der Lumineszenzeigenschaften von Halbleiterquantenpunkten (QP) vor. Zwei wichtige Materialsysteme stehen im Mittelpunkt dieser Arbeit. Beide Systeme sind für die Entwicklung von Anwendungen im Bereich der Quantenkryptografie und Quantencomputer von großer Bedeutung: Nitrid-basierte QP sind wichtige Kandidaten für die Anwendbarkeit bei Raumtemperatur. Am Beispiel des Materialsystems InGaAs/GaAs wurde ein neuer Ansatz der Herstellung positionierter QP untersucht. Für die optische Charakterisierung wurde Kathodolumineszenzspektroskopie (KL) benutzt, da sie eine hohe Orts- und Spektralauflösung bietet. Um die experimentellen Beobachtungen einzuordnen, wurden verschiedene Modellrechnungen durchgeführt und deren Ergebnisse werden zum ersten Mal im Rahmen dieser Arbeit präsentiert. Dabei vermittelt die gesamte Analyse ein besseres Verständnis der untersuchten Prozesse. Stochastische Fluktuationen lokaler elektrischer Felder in der Umgebung von QP beeinflussen die Lumineszenzenergie, dieser Effekt ist als spektrale Diffusion (SD) bekannt. Die Auswirkungen der SD auf die Lumineszenz Nitrid-basierter QP wurden untersucht. Die vorliegende Arbeit liefert umfangreiche Ergebnisse und Diskussionen zu unterschiedlichen Typen von SD und führt deren möglichen Ursprung auf bestimmte Arten von Defekten zurück. Es wurde festgestellt, dass die großen Linienbreiten auch bei resonanter Anregung auftreten und für die Nitrid-basierten QP, die mittels heutigen Verfahren gewachsen werden, eine charakteristische Eigenschaft darstellen. Ein spezielles Muster im zeitlichen Verlauf der Lumineszenz einzelner QP wird zum ersten Mal beschrieben, ein Model als Erklärung für diese Änderung der Linienlage wird vorgestellt und durch Simulationsrechnungen verifiziert. Pyro- und piezoelektrische Felder in den Nitrid-basierten Heterostrukturen verursachen eine räumliche Trennung der Wellenfunktionen der Ladungsträger in den QP. Für die resultierenden Dipolmomente exzitonischer Komplexe in einzelnen QP wurde aus den Experimenten anhand der SD sowohl die Größe als auch das relative Verhältnis identifiziert. Die Wechselwirkungen zwischen Exzitonen, eingeschlossen in AlN/GaN QP, und elementaren Gitterschwingungen wurden untersucht. Temperaturabhängige Messungen und spezielle Modelrechnungen zeigen die verstärkte Kopplung an akustische Phononen. Eine detaillierte Analyse der Kopplungsmechanismen in Abhängigkeit von Größe und Form eines QPs wurde mit Hilfe des Independent Boson Modells durchgeführt. Diese Rechnungen benutzen realistische Wellenfunktionen aus 8-Band k · p Rechnungen in der Hartree-Fock Näherung als Eingangsparameter und berücksichtigen außerdem die durch die SD verursachte inhomogene Linienverbreiterung. Die Simulationsergebnisse zeigen eine sehr gute Übereinstimmung mit dem Experiment. KL Untersuchungen haben bestätigt, dass der Einsatz vergrabener Stressor-Strukturen unter einer QP-Schicht das Wachstum der QP steuern kann. Die Ergebnisse deuten darauf hin, dass sich die QP in starker Korrelation mit der Position des Stressors bilden. Die durch den Stressor erzeugte Verspannung im Material beeinflusst auch die optischen Eigenschaften der positionierten QP. So wurden ortsabhängige systematische Variationen der QP nachgewiesen, die sich in der Emissionsenergie, der SD und der Polarisation zeigen. Da die in dieser Arbeit untersuchte Methode des kontrollierten Wachstums von QP auch in anderen Materialsystemen anwendbar ist, erscheint dieses Verfahren ein bedeutender Schritt für die Entwicklung von Anwendungen, die auf einzelnen positionierten QP basieren, die bestimmte optische Eigenschaften aufweisen sollen.This work presents the results of experimental investigations of the luminescence properties of two important quantum dot (QD) material systems by means of cathodoluminescence (CL) spectroscopy. Nitride-based QDs are prospective for quantum-communication applications at elevated temperatures due to their large localization energies. Site-controlled InGaAs/GaAs QDs present an example of a novel “bottom-up” approach for deterministic QD alignment. This method, based on strain-modulation controlled QD nucleation, is generally applicable to lateral positioning of nanostructures. The experimental results are substantiated with numerical calculations, some of which are presented for the first time within the frame of this work. Different manifestations of the so-called spectral diffusion (SD) - the variation of the single QD luminescence under influence of stochastic fluctuations of electric fields in the QD environment - were investigated. The dependence of SD on various excitation conditions and sample fabrication methods was analyzed for nitride-based QDs. The origin of different components of SD is discussed in terms of different defect types. For the spectral jitter of QD emission lines, which can be resolved in the spectroscopic experiments, a model of a moving charge is proposed. The analysis of the spectral jitter of the QD emission lines allows to conclude about the QD excitonic dipole-moment, induced by piezo- and pyroelectric fields. It is shown, that a large emission linewidth appears to be intrinsic property of the nitride material system using current fabrication methods and is present even in case of resonant excitation of the QD. From the spectral jitter of the emission lines, stemming from the excitonic transitions of the same QD, the ratio of the built-in dipole moments of the respective excitonic complexes can be determined quantitatively. Built-in dipole moments of various excitonic complexes from the same dot are shown to differ significantly. A special type of spectral jitter, reported for the first time in this work, allows to estimate the absolute value of the excitonic built-in dipole moment without applying external electric field. Interaction of excitons and acoustic phonons is investigated in detail in a combined experimental and theoretical survey for the first time for GaN/AlN QDs, where the impact of vertical and lateral charge-carrier confinement on the coupling mechanisms is analyzed. The independent Boson model using realistic wave-functions from 8-band k · p theory accounts very well for the experimental observations of the shape and position of the phonon side-bands. The intensity ratio of the zero-phonon line and phonon side-band as obtained from the numerical results matches measured data only when SD-induced line broadening is superimposed. The importance of taking SD into account in case of nitride-based QDs is again emphasized and its major impact on the inhomogeneous line broadening is proven. The analysis of temperature dependence of the emission linewidth shows a major role of acoustic phonon scattering for broadening of the linewidth, while the contribution of optical phonons can be neglected here. Spatially-resolved CL showed itself as a very useful technique for the investigation of the first test-structures of positioned QD. The feasibility of the growth concept is proven on the example of InGaAs/GaAs QD material system. The unambiguous influence of the strain from the buried stressor structure on luminescence properties, such as spectral diffusion and ensemble polarization, is evidenced. CL experiments reveal the formation of different QD luminescence bands, which can be clearly distinguished spectrally and spatially in strong correlation with the stressor position. The possibility to control properties of QD and their formation by means of strain from a buried stressor structure, appears an important step on the way to tailoring single-QD-based devices with desirable properties

    Traditional and Innovative Educational Technologies at the University through the E-Learning Prism

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    The article is dedicated to comprehension the process of technological education in relation to E-learning. The relevance of the study is determined by the situation connected with the COVID-19 coronavirus pandemic, which required various educational organizations complete transition to distance learning for an indefinite period. It is noted that various educational technologies have been gaining new implementations in the conditions of distance education. The trend towards the gradual rejection of traditional (explanatory and illustrative) teaching methods and the transition to innovative technologies that were being operated within the educational system over the past decades has undergone changes due to the widespread transition to distance learning. Traditional technology, which structure includes elements of interactivity and innovation, has proven its effectiveness in the circumstances of E-learning. The least effective ones, based on the authors’ university teaching experience were training and game technologies. The technology of developing training can be effective if a teacher meets a number of conditions, depends on methods, means, and others learning technologies. Project technology, heuristic learning, problem – based learning, case-study technology, and differentiated learning proved to be the most effective ones. It is noted that the effectiveness of technologies application in the process of distance learning largely depends on a’s teacher professionalism and creative approach. The conclusion is made about the dynamism of the educational technologies system, its dependence on the conditions of training and the rapid development of educational technologies in response to conditions changes

    Ways of Increase of Intellectual Potential of a Higher Educational Establishment (HES) Пути повышения интеллектуального потенциала вуза

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    The goal of the article is to identify possible ways of increase of intellectual potential of a HES, to consider problems of poor digestion of knowledge by students of economic specialties, to show advantages of work in small groups in teaching subjects of the mathematic cycle. The object of the study are problems of “poor receipt” of knowledge by students of economic HESs. Active methods of teaching subjects of the mathematical cycle are considered as one of the ways to awake student’s interest in the subject, rouse its understanding and applying in further labour activity. Instruments of the study are economic and mathematical methods that allow quantitative analysis of the obtained results. Overcoming the problems of “loss” of knowledge results in the growth of its intellectual potential. Result of the study is justification of use of the methods of active teaching in the process of teaching subjects of the mathematical cycle, positive impact of work in small groups on digestion of knowledge, and revelation of main reasons of “loss” of knowledge by students.<br>Цель статьи определить возможные пути повышения интеллектуального потенциала ВУЗа, рассмотреть проблемы неусвоения знаний студентами экономических специальностей, показать преимущества использования работы в малых группах в преподавании дисциплин математического цикла. Объектом исследования статьи являются проблемы «недополучения» знаний студентами экономических ВУЗов. Активные методы обучения дисциплинам математического цикла рассматриваются, как один из способов заинтересовать студента преподаваемой наукой, вызвать её понимание и применяемость в дальнейшей трудовой деятельности. Инструментарий исследования – экономико-математические методы, позволяющие количественно проанализировать получаемые результаты. Преодоление проблем «потери» знаний ведёт к росту его интеллектуального потенциала. Результат исследования – обоснование использования методов активного обучения в процессе преподавания дисциплин математического цикла, положительного влияния на усвоение знаний работы в малых группах, выявление основных причин «потери» знаний студентами
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