Study on the influence of the magnetron power supply on the properties of the silicon nitride films

Silicon nitride (Si3N4) films were deposited by magnetron sputtering of silicon target in (Ar+N2) atmosphere with refractive index 1.95 - 2.05. The results of Fourier transform infrared (FTIR) spectrophotometry showed Si-N bonds in the thin films with concentration 2.41·1023 - 3.48·1023 cm-3. Dependences of deposition rate, optical characteristics and surface morphology on rate of N2 flow and properties of magnetron power supply

Technologien der Mikrosystemtechnik fuer die Sicherheit im Fahrzeug. Teilvorhaben: Schutzueberzug fuer sensitive Oberflaechen Gemeinsamer Abschlussbericht

Target: PECVD of silicon nitride for passivation of sensitive three-dimensional electronics elements - determination of the influence of deposition parameters on the passivation layer quality - modification of the PECVD process pressure and following parameter optimization. Result: Proof of the fabrication of high quality passivation layers. Isotropic deposition. Low substrate stress. (orig.)SIGLEAvailable from TIB Hannover: F99B1090+a / FIZ - Fachinformationszzentrum Karlsruhe / TIB - Technische InformationsbibliothekBundesministerium fuer Bildung und Forschung (BMBF), Bonn (Germany)DEGerman