Fabrication and current-voltage characterization of a ferroelectric lead zirconate titanate/AlGaN∕GaN field effect transistor

We demonstrated ferroelectricfield effect transistors (FFETs) with hysteretic I-V characteristics in a modulation-doped field effect transistors(MODFET)AlGaN∕GaN platform with ferroelectricPb(Zr,Ti)O3 between a GaN channel and a gate metal. The pinch-off voltage was about 6–7V comparable to that of conventional Schottky gate MODFET. Counterclockwise hysteresis appeared in the transfer characteristics with a drain current shift of ∼5mA for zero gate-to-source voltage. This direction is opposite and much more pronounced than the defect induced clockwise hysteresis in conventional devices, which suggests that the key factor contributing to the counterclockwise hysteresis of the FFET is the ferroelectric switching effect of the lead zirconate titanate gate

デンシ デバイス オウヨウ エ ムケタ ブンシセン エピタキシーホウ ニ ヨル SiCジョウ コウヒンシツ AlN ノ ヘテロエピタキシャル セイチョウ

京都大学0048新制・課程博士博士(工学)甲第10860号工博第2391号新制||工||1311(附属図書館)UT51-2004-G707京都大学大学院工学研究科電子物性工学専攻(主査)教授 野田 進, 教授 鈴木 実, 教授 藤田 靜雄学位規則第4条第1項該当Doctor of EngineeringKyoto UniversityDFA