Fabrication of graphene nanoribbon by local anodic oxidation lithography using atomic force microscope

We conducted local anodic oxidation (LAO) lithography in single-layer, bilayer, and multilayer graphene using tapping-mode atomic force microscope. The width of insulating oxidized area depends systematically on the number of graphene layers. An 800-nm-wide bar-shaped device fabricated in single-layer graphene exhibits the half-integer quantum Hall effect. We also fabricated a 55-nm-wide graphene nanoribbon (GNR). The conductance of the GNR at the charge neutrality point was suppressed at low temperature, which suggests the opening of an energy gap due to lateral confinement of charge carriers. These results show that LAO lithography is an effective technique for the fabrication of graphene nanodevices.Comment: 4 pages, 4 figure

Using single quantum states as spin filters to study spin polarization in ferromagnets

By measuring electron tunneling between a ferromagnet and individual energy levels in an aluminum quantum dot, we show how spin-resolved quantum states can be used as filters to determine spin-dependent tunneling rates. We also observe magnetic-field-dependent shifts in the magnet's electrochemical potential relative to the dot's energy levels. The shifts vary between samples and are generally smaller than expected from the magnet's spin-polarized density of states. We suggest that they are affected by field-dependent charge redistribution at the magnetic interface.Comment: 4 pages, 1 color figur

Doping evolution of the electronic structure in the single-layer cuprates Bi2_2Sr2−x_{2-x}Lax_xCuO6+δ_{6+\delta}: Comparison with other single-layer cuprates

We have performed angle-resolved photoemission and core-level x-ray photoemission studies of the single-layer cuprate Bi$_2$Sr$_{2-x}$La$_x$CuO$_{6+\delta}$ (Bi2201) and revealed the doping evolution of the electronic structure from the lightly-doped to optimally-doped regions. We have observed the formation of the dispersive quasi-particle band, evolution of the Fermi ``arc'' into the Fermi surface and the shift of the chemical potential with hole doping as in other cuprates. The doping evolution in Bi2201 is similar to that in Ca$_{2-x}$Na$_{x}$CuO$_{2}$Cl$_2$ (Na-CCOC), where a rapid chemical potential shift toward the lower Hubbard band of the parent insulator has been observed, but is quite different from that in La$_{2-x}$Sr$_{x}$CuO$_{4}$ (LSCO), where the chemical potential does not shift, yet the dispersive band and the Fermi arc/surface are formed around the Fermi level already in the lightly-doped region. The (underlying) Fermi surface shape and band dispersions are quantitatively analyzed using tight-binding fit, and the deduced next-nearest-neighbor hopping integral $t'$ also confirm the similarity to Na-CCOC and the difference from LSCO

Spin Polarization and Magneto-Coulomb Oscillations in Ferromagnetic Single Electron Devices

The magneto-Coulomb oscillation, the single electron repopulation induced by external magnetic field, observed in a ferromagnetic single electron transistor is further examined in various ferromagnetic single electron devices. In case of double- and triple-junction devices made of Ni and Co electrodes, the single electron repopulation always occurs from Ni to Co electrodes with increasing a magnetic field, irrespective of the configurations of the electrodes. The period of the magneto-Coulomb oscillation is proportional to the single electron charging energy. All these features are consistently explained by the mechanism that the Zeeman effect induces changes of the Fermi energy of the ferromagnetic metal having a non-zero spin polarizations. Experimentally determined spin polarizations are negative for both Ni and Co and the magnitude is larger for Ni than Co as expected from band calculations.Comment: 4 pages, 3 figures, uses jpsj.sty, submitted to J. Phys. Soc. Jp

Single-dot spectroscopy via elastic single-electron tunneling through a pair of coupled quantum dots

We study the electronic structure of a single self-assembled InAs quantum dot by probing elastic single-electron tunneling through a single pair of weakly coupled dots. In the region below pinch-off voltage, the non-linear threshold voltage behavior provides electronic addition energies exactly as the linear, Coulomb blockade oscillation does. By analyzing it, we identify the s and p shell addition spectrum for up to six electrons in the single InAs dot, i.e. one of the coupled dots. The evolution of shell addition spectrum with magnetic field provides Fock-Darwin spectra of s and p shell.Comment: 7 pages, 3 figures, Accepted for publication in Phys. Rev. Let

Nonequilibrium spin distribution in single-electron transistor

Single-electron transistor with ferromagnetic outer electrodes and nonmagnetic island is studied theoretically. Nonequilibrium electron spin distribution in the island is caused by tunneling current. The dependencies of the magnetoresistance ratio $\delta$ on the bias and gate voltages show the dips which are directly related to the induced separation of Fermi levels for electrons with different spins. Inside a dip $\delta$ can become negative.Comment: 11 pages, 2 eps figure

First-Principles Study on Leakage Current through Si/SiO2_2 Interface

The relationship between the presence of defects at the stacking structure of the Si/SiO$_2$ interface and leakage current is theoretically studied by first-principles calculation. I found that the leakage current through the interface with dangling bonds is 530 times larger than that without any defects, which is expected to lead to dielectric breakdown. The direction of the dangling bonds is closely related to the performance of the oxide as an insulator. In addition, it is proved that the termination of the dangling bonds by hydrogen atoms is effective for reducing the leakage current.Comment: 11 pages. to be published in Phys. Rev.

Dynamic nuclear polarization induced by breakdown of fractional quantum Hall effect

We study dynamic nuclear polarization (DNP) induced by breakdown of the fractional quantum Hall (FQH) effect. We find that voltage-current characteristics depend on current sweep rates at the quantum Hall states of Landau level filling factors $\nu$ = 1, 2/3, and 1/3. The sweep rate dependence is attributed to DNP occurring in the breakdown regime of FQH states. Results of a pump and probe experiment show that the polarities of the DNP induced in the breakdown regimes of the FQH states is opposite to that of the DNP induced in the breakdown regimes of odd-integer quantum Hall states.Comment: 4 pages, 4 figure