Angiopoietin-1 promotes functional neovascularization that relieves ischemia by improving regional reperfusion in a swine chronic myocardial ischemia model

10.1007/s11373-006-9082-xJournal of Biomedical Science134579-59

A case study on quality of sleep and health using Bayesian networks

The objectives of this study are to investigate the associations of the socio-demographic characteristics, living habits, social and interpersonal factors and behaviour-related risk factors with both the quality of sleep and state of health. The tool used is Bayesian networks (BNs), a special case of probabilistic graphical models. The data utilised in this study is collected by employing the sample survey technique through the online network. A total of 1316 sets of data are collected with 20 variables of interest being studied. Our situation is whereby the BNs structure is unknown with full observability. A structural learning is conducted on the data to learn the correct network structure. There are several phases involved including implementation of the learning algorithms, integration of prior knowledge through the whitelist argument and arc setting to form directed acyclic graphs. The network scores computation is implemented to estimate the fitting of the resulting network of each structural learning algorithm in order to choose the best-fitted network. The arc strength or edge intensity is computed to estimate the marginal confidence on the presence of an arc. We found that the quality of sleep is dependent on certain factors in socio-demographic characteristics. The state of health is dependent on some factors in socio-demographic characteristics and living habits. We can also deduce that the quality of sleep has an impact on the state of health

Risk management of strategic alliance in supply chain.

The purpose of this dissertation is to develop a system framework to investigate and assess the risks involved in managing strategic alliances in the supply chain.Master of Business Administratio

High frequency drain current noise modeling in MOSFETs under sub-threshold condition

A new high frequency drain current noise model was developed for MOSFETs under sub-threshold condition. A simple parameter extraction technique is proposed, which utilizes Y-parameter analysis on the RF small-signal equivalent circuit. Good agreement has been obtained between the predicted and measured results up to 20 GHz.Published versio

A new unified model for channel thermal noise of deep sub-micron RFCMOS

A new unified model for circuit simulation is presented to predict the high frequency channel thermal noise of deep sub-micron MOSFETs in strong inversion region. Based on the new channel thermal noise model, the simulated channel thermal noise spectral densities of the devices fabricated in a 0.13μm RFCMOS technology process are compared to the channel noise directly extracted from RF noise measurements.Published versio

Analytical high frequency channel thermal noise modeling in deep sub-micron MOSFETs

A simple high frequency channel thermal noise model was developed for MOSFETs in strong inversion region. Short channel effects such as channel length modulation effect and mobility degradation due to vertical field were taken into account in the current-voltage model and channel thermal noise model. It was found that the long channel Tsividis’ noise model is still valid for short channel devices by including the proposed effective mobility model and the channel length modulation effect. Good agreement has been obtained between the simulated and measured results across different frequencies, gate biases and drain biases.Published versio

Impact of velocity saturation and hot carrier effects on channel thermal noise model of deep sub-micron MOSFETs

This paper discusses the impact of the short channel effects, such as channel length modulation (CLM), velocity saturation effect (VSE) and hot carrier effect (HCE), on the channel thermal noise model of short channel MOSFETs. Based on the fundamental thermal noise theory, the channel thermal noise models are derived in four different cases considering the effect of CLM only, CLM and VSE, CLM and HCE, and the combine effect of CLM, VSE and HCE. The noise reduction due to the VSE is found to be completely cancelled out by the noise increment due to the HCE for all the operating conditions

A new millimeter-wave fixture deembedding method based on generalized cascade network model

In this letter, a universal cascade-based deembedding technique was presented for on-wafer characterization of the RF CMOS device. As compared with existing deembedding approaches, it is developed based on unique combinations of two THRU structures that enable efficient deembedding of fixture parasitics without any inaccurate lumped approximation or requirement of known standards. The proposed deembedding technique is validated on 0.13- μm CMOS devices and has been proven to be more accurate than existing lumped and cascade-based deembedding techniques. As a result, it gives deeper physical prediction on transistor gate capacitances and transconductance. Therefore, it is highly suitable to be applied for device characterization at millimeter-wave frequencies

MOSFET drain current noise modeling with effective gate overdrive and junction noise

In this letter, a drain current noise model that includes the channel thermal noise and the shot noise generated at the source-bulk junction and the drain-bulk junction is presented. A unified analytical expression is derived to ensure excellent continuity with smooth transition of drain current noise from weak- to strong-inversion regimes, including the moderate-inversion region. Excellent agreement between simulated and extracted noise data has shown that the proposed model is accurate over different dimensions and operating conditions