10,140 research outputs found
A semiquantitative approach to the impurity-band-related transport properties of GaMnAs nanolayers
We investigate the spin-polarized transport of GaMnAs nanolayers in which a
ferromagnetic order exists below a certain transition temperature. Our
calculation for the self-averaged resistivity takes into account the existence
of an impurity band determining the extended ("metallic" transport) or
localized (hopping by thermal excitation) nature of the states at and near the
Fermi level. Magnetic order and resistivity are inter-related due to the
influence of the spin polarization of the impurity band and the effect of the
Zeeman splitting on the mobility edge. We obtain, for a given range of Mn
concentration and carrier density, a "metallic" behavior in which the transport
by extended carriers dominates at low temperature, and is dominated by the
thermally excited localized carriers near and above the transition temperature.
This gives rise to a conspicuous hump of the resistivity which has been
experimentally observed and brings light onto the relationship between
transport and magnetic properties of this material
Detecção de eventos não autorizados de milho transgênico em amostras de ração animal por PCR em tempo real.
Sporotrichosis caused by sporothrix mexicana, Portugal
Sporotrichosis is a subcutaneous fungal infection present worldwide that is caused by traumatic inoculation or inhalation of spores of the dimorphic fungus Sporothrix schenckii complex (1-3). However, molecular studies have shown that the S. schenckii complex constitutes several cryptic infectious species (i.e., S. albicans, S. brasiliensis, S. globosa, S. luriei, S. mexicana, and S. schenckii). Marimon et al. (4) demonstrated 3 major clades grouped into 6 putative phylogenetic species. The natural habitats of these species are soil and plants. The species showed distinct pathologic behavior, antifungal responses, and phenotypes, which suggests that optimal clinical treatment may depend on the taxon involved in the sporotrichosis (1). Human infections have been reported primarily from the Americas, including Latin America (3,5). Asia (e.g., Malaysia, India, Japan), Africa, and Australia are also regions where infections are endemic (6). Although infections are rare in Europe, a case of human infection (7) and a case of an animal infection (8) have been described in southern Italy. We report a case of human sporotrichosis in which S. mexicana was isolated from a patient in Portugal.(undefined
Spin-polarized transport in ferromagnetic multilayered semiconductor nanostructures
The occurrence of inhomogeneous spin-density distribution in multilayered
ferromagnetic diluted magnetic semiconductor nanostructures leads to strong
dependence of the spin-polarized transport properties on these systems. The
spin-dependent mobility, conductivity and resistivity in
(Ga,Mn)As/GaAs,(Ga,Mn)N/GaN, and (Si,Mn)/Si multilayers are calculated as a
function of temperature, scaled by the average magnetization of the diluted
magnetic semiconductor layers. An increase of the resistivity near the
transition temperature is obtained. We observed that the spin-polarized
transport properties changes strongly among the three materials.Comment: 3 pages, 4 figure
Density-functionals not based on the electron gas: Local-density approximation for a Luttinger liquid
By shifting the reference system for the local-density approximation (LDA)
from the electron gas to other model systems one obtains a new class of density
functionals, which by design account for the correlations present in the chosen
reference system. This strategy is illustrated by constructing an explicit LDA
for the one-dimensional Hubbard model. While the traditional {\it ab initio}
LDA is based on a Fermi liquid (the electron gas), this one is based on a
Luttinger liquid. First applications to inhomogeneous Hubbard models, including
one containing a localized impurity, are reported.Comment: 4 pages, 4 figures (final version, contains additional applications
and discussion; accepted by Phys. Rev. Lett.
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