Host and Habitat Use by Parasitoids (Hymenoptera: Pteromalidae) of House Fly and Stable Fly (Diptera: Muscidae) Pupae

House fly and stable fly pupae were collected during the summer from a dairy farm in northern Illinois. Spalangia nigroaenea accounted for most of the parasitoids recovered from house flies. Spalangia nigra, S. endius, Muscidifurax spp., and S. nigroaenea accounted for most of the parasitoids from stable flies. The majority of flies were house flies late in the summer and stable flies early in the summer. Higher percentages of house flies tended to be in samples containing lower substrate moisture and higher substrate temperature. Parasitism of stable flies started earlier and peaked weeks before that of house flies, with overall parasitism highest from mid-to late-summer. Parasitism of house flies, but not stable flies, differed significantly among habitats, being greater in calf hutches than in edge samples. Hymenopterous parasitoids from house flies tended to include a greater percentage of S. nigroaenea (and a lower percentage of Muscidifurax spp.) in calf hutches versus drainage or edge habitats and in sub- strates consisting of mostly wood shavings versus mostly manure. Within samples, differential parasitism of fly species was not detected for S. nigroaenea, S. endius, or Muscidifurax spp.; but S. nigra preferentially parasitized stable flies

Host and Habitat Use by Parasitoids (Hymenoptera: Pteromalidae) of House Fly and Stable Fly (Diptera: Muscidae) Pupae

House fly and stable fly pupae were collected during the summer from a dairy farm in northern Illinois. Spalangia nigroaenea accounted for most of the parasitoids recovered from house flies. Spalangia nigra, S. endius, Muscidifurax spp., and S. nigroaenea accounted for most of the parasitoids from stable flies. The majority of flies were house flies late in the summer and stable flies early in the summer. Higher percentages of house flies tended to be in samples containing lower substrate moisture and higher substrate temperature. Parasitism of stable flies started earlier and peaked weeks before that of house flies, with overall parasitism highest from mid-to late-summer. Parasitism of house flies, but not stable flies, differed significantly among habitats, being greater in calf hutches than in edge samples. Hymenopterous parasitoids from house flies tended to include a greater percentage of S. nigroaenea (and a lower percentage of Muscidifurax spp.) in calf hutches versus drainage or edge habitats and in sub- strates consisting of mostly wood shavings versus mostly manure. Within samples, differential parasitism of fly species was not detected for S. nigroaenea, S. endius, or Muscidifurax spp.; but S. nigra preferentially parasitized stable flies

Tuning of structure inversion asymmetry by the δ\delta-doping position in (001)-grown GaAs quantum wells

Structure and bulk inversion asymmetry in doped (001)-grown GaAs quantum wells is investigated by applying the magnetic field induced photogalvanic effect. We demonstrate that the structure inversion asymmetry (SIA) can be tailored by variation of the delta-doping layer position. Symmetrically-doped structures exhibit a substantial SIA due to impurity segregation during the growth process. Tuning the SIA by the delta-doping position we grow samples with almost equal degrees of structure and bulk inversion asymmetry.Comment: 4 pages 2 figure

Photoexcitation of valley-orbit currents in (111)-oriented silicon metal-oxide-semiconductor field-effect transistors

We demonstrate the injection of pure valley-orbit currents in multivalley semiconductors and present the phenomenological theory of this effect. We studied photoinduced transport in (111)-oriented silicon metaloxide-semiconductor field effect transistors at room temperature. By shining circularly polarized light on exact oriented structures with six equivalent valleys, nonzero electron fluxes within each valley are generated, which compensate each other and do not yield a net electric current. By disturbing the balance between the valley fluxes, we demonstrate that the pure valley-orbit currents can be converted into a measurable electric current

Classical ratchet effects in heterostructures with a lateral periodic potential

We study terahertz radiation induced ratchet currents in low dimensional semiconductor structures with a superimposed one-dimensional lateral periodic potential. The periodic potential is produced by etching a grating into the sample surface or depositing metal stripes periodically on the sample top. Microscopically, the photocurrent generation is based on the combined action of the lateral periodic potential, verified by transport measurements, and the in-plane modulated pumping caused by the lateral superlattice. We show that a substantial part of the total current is caused by the polarization-independent Seebeck ratchet effect. In addition, polarization-dependent photocurrents occur, which we interpret in terms of their underlying microscopical mechanisms. As a result, the class of ratchet systems needs to be extended by linear and circular ratchets, sensitive to linear and circular polarizations of the driving electro-magnetic force.Comment: 11 pages, 9 figures, 2 column

Photon helicity driven electric currents in graphene

We report on the observation of photon helicity driven currents in graphene. The directed net electric current is generated in single layer graphene by circularly polarized terahertz laser radiation at normal as well as at oblique incidence and changes its sign upon reversing the radiation helicity. The phenomenological and microscopic theories of the observed photocurrents are developed. We demonstrate that under oblique incidence the current is caused by the circular photon drag effect in the interior of graphene sheet. By contrast, the effect at normal incidence stems from the sample edges, which reduce the symmetry and result in an asymmetric scattering of carriers driven by the radiation field. Besides a photon helicity dependent current we also observe photocurrents in response to linearly polarized radiation. The microscopic mechanisms governing this effect are discussed.Comment: 13 pages, 7 figure

Helicity sensitive terahertz radiation detection by dual-grating-gate high electron mobility transistors

We report on the observation of a radiation helicity sensitive photocurrent excited by terahertz (THz) radiation in dual-grating-gate (DGG) InAlAs/InGaAs/InAlAs/InP high electron mobility transistors (HEMT). For a circular polarization the current measured between source and drain contacts changes its sign with the inversion of the radiation helicity. For elliptically polarized radiation the total current is described by superposition of the Stokes parameters with different weights. Moreover, by variation of gate voltages applied to individual gratings the photocurrent can be defined either by the Stokes parameter defining the radiation helicity or those for linear polarization. We show that artificial non-centrosymmetric microperiodic structures with a two-dimensional electron system excited by THz radiation exhibit a dc photocurrent caused by the combined action of a spatially periodic in-plane potential and spatially modulated light. The results provide a proof of principle for the application of DGG HEMT for all-electric detection of the radiation's polarization state.Comment: 7 pages, 4 figure