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Ab-initio simulations of higher Miller index Si:SiO<inf>2</inf> interfaces for fin field effect transistor and nanowire transistors
Models of three representative higher Miller index interfaces, Si(310):SiO2, Si(410):SiO2, and Si(331):SiO2, have been built by an ab-initio molecular dynamics method. We show that each interface can be made as a fully bonded network without any defects and has a reasonable electronic structure for use in fin field effect transistors or gate-all-around nanowire devices. The differences in numbers of oxygen bridges are attributed to the intermediate sub-oxide components and the atomic step structure. The interface bonding schemes to passivate different densities of dangling bonds on different facets are also analyzed.This is the accepted manuscript. The final version is available at scitation.aip.org/content/aip/journal/jap/119/5/10.1063/1.4941272
Histograms in heavy-quark QCD at finite temperature and density
We study the phase structure of lattice QCD with heavy quarks at finite
temperature and density by a histogram method. We determine the location of the
critical point at which the first-order deconfining transition in the
heavy-quark limit turns into a crossover at intermediate quark masses through a
change of the shape of the histogram under variation of coupling parameters. We
estimate the effect of the complex phase factor which causes the sign problem
at finite density, and show that, in heavy-quark QCD, the effect is small
around the critical point. We determine the critical surface in 2+1 flavor QCD
in the heavy-quark region at all values of the chemical potential mu including
mu=infty.Comment: 26 pages, 21 figures, 1 tabl
Studies of Tritiated Water Vapor Removal with a Hollow-fi lament Type Polyimide Membrane Dehumidifier
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