Infrared spectroscopy techniques for studying the electronic structures of materials under high-pressure

In this article, we describe our high-pressure infrared (IR) spectroscopy techniques for studying the electronic structures of materials at high pressures. High pressure of up to 20 GPa is applied to a sample using a diamond anvil cell (DAC). To accurately perform IR spectroscopy in the limited sample space of a DAC, synchrotron radiation is used as a bright IR source. Our techniques allow reflectance studies of a single crystal sample and determination of the optical functions of the sample such as dielectric function and optical conductivity. To illustrate the capability and usefulness of our techniques, some actual results of high-pressure IR studies on rare-earth compounds are described

Optically Detected Structural Change in the N-Terminal Region of the Voltage-Sensor Domain

AbstractThe voltage-sensor domain (VSD) is a functional module that undergoes structural transitions in response to membrane potential changes and regulates its effectors, thereby playing a crucial role in amplifying and decoding membrane electrical signals. Ion-conductive pore and phosphoinositide phosphatase are the downstream effectors of voltage-gated channels and the voltage-sensing phosphatase, respectively. It is known that upon transition, the VSD generally acts on the region C-terminal to S4. However, whether the VSD also induces any structural changes in the N-terminal region of S1 has not been addressed directly. Here, we report the existence of such an N-terminal effect. We used two distinct optical reporters—one based on the Förster resonance energy transfer between a pair of fluorescent proteins, and the other based on fluorophore-labeled HaloTag—and studied the behavior of these reporters placed at the N-terminal end of the monomeric VSD derived from voltage-sensing phosphatase. We found that both of these reporters were affected by the VSD transition, generating voltage-dependent fluorescence readouts. We also observed that whereas the voltage dependencies of the N- and C-terminal effects appear to be tightly coupled, the local structural rearrangements reflect the way in which the VSD is loaded, demonstrating the flexible nature of the VSD

Optical Conductivity Study of f Electron States in YbCu2Ge2 at High Pressures to 20 GPa

Optical conductivity [σ(ω)] of YbCu2Ge2 has been measured at external pressures (P) to 20 GPa, to study the P evolution of f electron hybridized states. At P=0, σ(ω) shows a marked mid-infrared (mIR) peak at 0.37 eV, which is due to optical excitations from f14 (Yb2+) state located below the Fermi level. With increasing P, the mIR peak shows significant shifts to lower energy, reaching 0.18 eV at P=20 GPa. This result indicates that the f14 energy level increases toward the Fermi level with P. Such a shift of the f electron level with P has been expected from theoretical considerations, but had never been demonstrated by spectroscopic experiment under high P. The obtained results are also analyzed in terms of the P evolution of the conduction-f electron hybridization

Contrasting pressure evolution of f-electron hybridized states in CeRhIn5 and YbNi3 Ga9 : An optical conductivity study

Optical conductivity [σ (ω)] of CeRhIn5 and YbNi3Ga9 have been measured at external pressures to 10 GPa and at low temperatures to 6 K. Regarding CeRhIn5, at ambient pressure the main feature in σ (ω) is a Drude peak due to free carriers. With increasing pressure, however, a characteristic midinfrared (mIR) peak rapidly develops in σ (ω), and its peak energy and width increase with pressure. These features are consistent with an increased conduction (c)- f electron hybridization at high pressure and show that pressure has tuned the electronic state of CeRhIn5 from very weakly to strongly hybridized ones. As for YbNi3Ga9, in contrast, a marked mIR peak is observed already at ambient pressure, indicating a strong c- f hybridization. At high pressures, however, the mIR peak shifts to lower energy and becomes diminished and seems to merge with the Drude component at 10 GPa. Namely, CeRhIn5 and YbNi3Ga9 exhibit some opposite tendencies in the pressure evolution of σ (ω) and electronic structure. These results are discussed in terms of the pressure evolution of c- f hybridized electronic states in Ce and Yb compounds, in particular in terms of the electron-hole symmetry often considered between Ce and Yb

Surveys of postpartum depression in Miyagi, Japan, after the Great East Japan Earthquake

This study explores the correlation between the impact of the Great East Japan Earthquake and the incidence of postpartum depression in Miyagi prefecture, Japan. The design used was a cross-sectional study with self-administered questionnaires, 6–9 months after the disaster. The results showed the prevalence of postnatal women with Edinburgh Postnatal Depression Scale (EPDS) score of ≥9 to be 21.3 %. Multivariate analysis showed that exposure to tsunami (odds ratio, 1.80; 95 % confidence interval, 1.16–2.78) was significantly and independently associated with an EPDS score of ≥9. Postnatal women and their children should be treated as a vulnerable population, and a protective framework must be established to prepare for future devastating disasters

Robust hybridization gap in the Kondo insulator YbB12 probed by femtosecond optical spectroscopy

In heavy fermions the relaxation dynamics of photoexcited carriers has been found to be governed by the low energy indirect gap Eg resulting from hybridization between localized moments and conduction band electrons. Here, carrier relaxation dynamics in a prototype Kondo insulator YbB12 is studied over a large range of temperatures and over three orders of magnitude. We utilize the intrinsic nonlinearity of dynamics to quantitatively determine microscopic parameters, such as electron-hole recombination rate. The extracted value reveals that hybridization is accompanied by a strong charge transfer from localized 4 f levels. The results imply the presence of a hybridization gap up to temperatures of the order of Eg/kB ≈ 200 K, which is extremely robust against electronic excitation. Finally, below 20 K the data reveal changes in the low energy electronic structure, attributed to short-range antiferromagnetic correlations between the localized levels

Cadherin activity is required for activity-induced spine remodeling

Neural activity induces the remodeling of pre- and postsynaptic membranes, which maintain their apposition through cell adhesion molecules. Among them, N-cadherin is redistributed, undergoes activity-dependent conformational changes, and is required for synaptic plasticity. Here, we show that depolarization induces the enlargement of the width of spine head, and that cadherin activity is essential for this synaptic rearrangement. Dendritic spines visualized with green fluorescent protein in hippocampal neurons showed an expansion by the activation of AMPA receptor, so that the synaptic apposition zone may be expanded. N-cadherin-venus fusion protein laterally dispersed along the expanding spine head. Overexpression of dominant-negative forms of N-cadherin resulted in the abrogation of the spine expansion. Inhibition of actin polymerization with cytochalasin D abolished the spine expansion. Together, our data suggest that cadherin-based adhesion machinery coupled with the actin-cytoskeleton is critical for the remodeling of synaptic apposition zone

Pressure suppression of the excitonic insulator state in Ta2NiSe5 observed by optical conductivity

The layered chalcogenide Ta2NiSe5 has recently attracted much interest as a strong candidate for a long-sought excitonic insulator (EI). Since the physical properties of an EI are expected to depend sensitively on the external pressure (P), it is important to clarify the P evolution of a microscopic electronic state in Ta2NiSe5. Here we report the optical conductivity [σ (ω)] of Ta2NiSe5 measured at high P to 10 GPa and at low temperatures to 8 K. With cooling at P = 0, σ (ω) develops an energy gap of about 0.17 eV and a pronounced excitonic peak at 0.38 eV as reported previously. With increasing P, the energy gap becomes narrower and the excitonic peak is diminished. Above a structural transition at Ps ≃ 3 GPa, the energy gap becomes partially filled, indicating that Ta2NiSe5 is a semimetal after the EI state is suppressed by P. At higher P, σ (ω) exhibits metallic characteristics with no energy gap. The detailed P evolution of the energy gap and σ (ω) is presented, and discussed mainly in terms of a weakening of excitonic correlation with P