1,239 research outputs found
Electronic structure of InMnAs studied by photoemission spectroscopy: Comparison with GaMnAs
We have investigated the electronic structure of the -type diluted
magnetic semiconductor InMnAs by photoemission spectroscopy. The Mn
3 partial density of states is found to be basically similar to that of
GaMnAs. However, the impurity-band like states near the top of
the valence band have not been observed by angle-resolved photoemission
spectroscopy unlike GaMnAs. This difference would explain the
difference in transport, magnetic and optical properties of
InMnAs and GaMnAs. The different electronic
structures are attributed to the weaker Mn 3 - As 4 hybridization in
InMnAs than in GaMnAs.Comment: 4 pages, 3 figure
Mechanism of carrier-induced ferromagnetism in magnetic semiconductors
Taking into account both random impurity distribution and thermal
fluctuations of localized spins, we have performed a model calculation for the
carrier (hole) state in GaMnAs by using the coherent potential
approximation (CPA). The result reveals that a {\it p}-hole in the band tail of
GaMnAs is not like a free carrier but is rather virtually bounded
to impurity sites. The carrier spin strongly couples to the localized {\it d}
spins on Mn ions. The hopping of the carrier among Mn sites causes the
ferromagnetic ordering of the localized spins through the double-exchange
mechanism. The Curie temperature obtained by using conventional parameters
agrees well with the experimental result.Comment: 7 pages, 4 figure
Electrospray ionization mass spectrometric observation of ligand exchange of zinc pyrithione with amino acids
ArticleRAPID COMMUNICATIONS IN MASS SPECTROMETRY. 23(14):2161-2166 (2009)journal articl
Interlayer Exchange Coupling in (Ga,Mn)As-based Superlattices
The interlayer coupling between (Ga,Mn)As ferromagnetic layers in
all-semiconductor superlattices is studied theoretically within a tight-binding
model, which takes into account the crystal, band and magnetic structure of the
constituent superlattice components. It is shown that the mechanism originally
introduced to describe the spin correlations in antiferromagnetic EuTe/PbTe
superlattices, explains the experimental results observed in ferromagnetic
semiconductor structures, i.e., both the antiferromagnetic coupling between
ferromagnetic layers in IV-VI (EuS/PbS and EuS/YbSe) superlattices as well as
the ferromagnetic interlayer coupling in III-V ((Ga,Mn)As/GaAs) multilayer
structures. The model allows also to predict (Ga,Mn)As-based structures, in
which an antiferromagnetic interlayer coupling could be expected.Comment: 4 pages, 3 figure
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