Magnetic anisotropy switching in (Ga,Mn)As with increasing hole concentration

We study a possible mechanism of the switching of the magnetic easy axis as a function of hole concentration in (Ga,Mn)As epilayers. In-plane uniaxial magnetic anisotropy along [110] is found to exceed intrinsic cubic magnetocrystalline anisotropy above a hole concentration of p = 1.5 * 10^21 cm^-3 at 4 K. This anisotropy switching can also be realized by post-growth annealing, and the temperature-dependent ac susceptibility is significantly changed with increasing annealing time. On the basis of our recent scenario [Phys. Rev. Lett. 94, 147203 (2005); Phys. Rev. B 73, 155204 (2006).], we deduce that the growth of highly hole-concentrated cluster regions with [110] uniaxial anisotropy is likely the predominant cause of the enhancement in [110] uniaxial anisotropy at the high hole concentration regime. We can clearly rule out anisotropic lattice strain as a possible origin of the switching of the magnetic anisotropy.Comment: 5 pages, 4 figures, to appear in Phys. Rev.

Electronic structure of In1−x_{1-x}Mnx_xAs studied by photoemission spectroscopy: Comparison with Ga1−x_{1-x}Mnx_xAs

We have investigated the electronic structure of the $p$-type diluted magnetic semiconductor In$_{1-x}$Mn$_x$As by photoemission spectroscopy. The Mn 3$d$ partial density of states is found to be basically similar to that of Ga$_{1-x}$Mn$_x$As. However, the impurity-band like states near the top of the valence band have not been observed by angle-resolved photoemission spectroscopy unlike Ga$_{1-x}$Mn$_x$As. This difference would explain the difference in transport, magnetic and optical properties of In$_{1-x}$Mn$_x$As and Ga$_{1-x}$Mn$_x$As. The different electronic structures are attributed to the weaker Mn 3$d$ - As 4$p$ hybridization in In$_{1-x}$Mn$_x$As than in Ga$_{1-x}$Mn$_x$As.Comment: 4 pages, 3 figure

Propagating Coherent Acoustic Phonon Wavepackets in InMnAs/GaSb

We observe pronounced oscillations in the differential reflectivity of a ferromagnetic InMnAs/GaSb heterostructure using two-color pump-probe spectroscopy. Although originally thought to be associated with the ferromagnetism, our studies show that the oscillations instead result from changes in the position and frequency-dependent dielectric function due to the generation of coherent acoustic phonons in the ferromagnetic InMnAs layer and their subsequent propagation into the GaSb. Our theory accurately predicts the experimentally measured oscillation period and decay time as a function of probe wavelength.Comment: 4 pages, 4 figure

Tuning the electrically evaluated electron Lande g factor in GaAs quantum dots and quantum wells of different well widths

We evaluate the Lande g factor of electrons in quantum dots (QDs) fabricated from GaAs quantum well (QW) structures of different well width. We first determine the Lande electron g factor of the QWs through resistive detection of electron spin resonance and compare it to the enhanced electron g factor determined from analysis of the magneto-transport. Next, we form laterally defined quantum dots using these quantum wells and extract the electron g factor from analysis of the cotunneling and Kondo effect within the quantum dots. We conclude that the Lande electron g factor of the quantum dot is primarily governed by the electron g factor of the quantum well suggesting that well width is an ideal design parameter for g-factor engineering QDs

Indirect exchange in GaMnAs bilayers via spin-polarized inhomogeneous hole gas: Monte Carlo simulation

The magnetic order resulting from an indirect exchange between magnetic moments provided by spin-polarized hole gas in the metallic phase of a GaMnAs double layer structure is studied via Monte Carlo simulation. The coupling mechanism involves a perturbative calculation in second order of the interaction between the magnetic moments and carriers (holes). We take into account a possible polarization of the hole gas due to the existence of an average magnetization in the magnetic layers, establishing, in this way, a self-consistency between the magnetic order and the electronic structure. That interaction leads to an internal ferromagnetic order inside each layer, and a parallel arrangement between their magnetizations, even in the case of thin layers. This fact is analyzed in terms of the inter- and intra-layer interactions.Comment: 17 pages and 14 figure