The stochastic pump current and the non-adiabatic geometrical phase

We calculate a pump current in a classical two-state stochastic chemical kinetics by means of the non-adiabatic geometrical phase interpretation. The two-state system is attached to two particle reservoirs, and under a periodic perturbation of the kinetic rates, it gives rise to a pump current between the two-state system and the absorbing states. In order to calculate the pump current, the Floquet theory for the non-adiabatic geometrical phase is extended from a Hermitian case to a non-Hermitian case. The dependence of the pump current on the frequency of the perturbative kinetic rates is explicitly derived, and a stochastic resonance-like behavior is obtained.Comment: 11 page

Noncyclic and nonadiabatic geometric phase for counting statistics

We propose a general framework of the geometric-phase interpretation for counting statistics. Counting statistics is a scheme to count the number of specific transitions in a stochastic process. The cumulant generating function for the counting statistics can be interpreted as a `phase', and it is generally divided into two parts: the dynamical phase and a remaining one. It has already been shown that for cyclic evolution the remaining phase corresponds to a geometric phase, such as the Berry phase or Aharonov-Anandan phase. We here show that the remaining phase also has an interpretation as a geometric phase even in noncyclic and nonadiabatic evolution.Comment: 12 pages, 1 figur

Spin-filter tunnel junction with matched Fermi surfaces

Efficient injection of spin-polarized current into a semiconductor is a basic prerequisite for building semiconductor-based spintronic devices. Here, we use inelastic electron tunneling spectroscopy to show that the efficiency of spin-filter-type spin injectors is limited by spin scattering of the tunneling electrons. By matching the Fermi-surface shapes of the current injection source and target electrode material, spin injection efficiency can be significantly increased in epitaxial ferromagnetic insulator tunnel junctions. Our results demonstrate that not only structural but also Fermi-surface matching is important to suppress scattering processes in spintronic devices.Comment: 5 pages, 4 figure

In-situ photoemission study of Pr_{1-x}Ca_xMnO_3 epitaxial thin films with suppressed charge fluctuations

We have performed an {\it in-situ} photoemission study of Pr_{1-x}Ca_xMnO_3 (PCMO) thin films grown on LaAlO_3 (001) substrates and observed the effect of epitaxial strain on the electronic structure. We found that the chemical potential shifted monotonically with doping, unlike bulk PCMO, implying the disappearance of incommensurate charge fluctuations of bulk PCMO. In the valence-band spectra, we found a doping-induced energy shift toward the Fermi level (E_F) but there was no spectral weight transfer, which was observed in bulk PCMO. The gap at E_F was clearly seen in the experimental band dispersions determined by angle-resolved photoemission spectroscopy and could not be explained by the metallic band structure of the C-type antiferromagnetic state, probably due to localization of electrons along the ferromagnetic chain direction or due to another type of spin-orbital ordering.Comment: 5 pages, 4 figure

Infrared anomalous Hall effect in SrRuO3_3: Evidence for crossover to intrinsic behavior

The origin of the Hall effect in many itinerant ferromagnets is still not resolved, with an anomalous contribution from the sample magnetization that can exhibit extrinsic or intrinsic behavior. We report the first mid-infared (MIR) measurements of the complex Hall ($\theta_H$), Faraday ($\theta_F$), and Kerr ($\theta_K$) angles, as well as the Hall conductivity ($\sigma_{xy}$) in a SrRuO$_3$ film in the 115-1400 meV energy range. The magnetic field, temperature, and frequency dependence of the Hall effect is explored. The MIR magneto-optical response shows very strong frequency dependence, including sign changes. Below 200 meV, the MIR $\theta_H (T)$ changes sign between 120 and 150 K, as is observed in dc Hall measurements. Above 200 meV, the temperature dependence of $\theta_H$ is similar to that of the dc magnetization and the measurements are in good agreement with predictions from a band calculation for the intrinsic anomalous Hall effect (AHE). The temperature and frequency dependence of the measured Hall effect suggests that whereas the behavior above 200 meV is consistent with an intrinsic AHE, the extrinsic AHE plays an important role in the lower energy response.Comment: The resolution of figures is improve

An improved continuous compositional-spread technique based on pulsed-laser deposition and applicable to large substrate areas

A new method for continuous compositional-spread (CCS) thin-film fabrication based on pulsed-laser deposition (PLD) is introduced. This approach is based on a translation of the substrate heater and the synchronized firing of the excimer laser, with the deposition occurring through a slit-shaped aperture. Alloying is achieved during film growth (possible at elevated temperature) by the repeated sequential deposition of sub-monolayer amounts. Our approach overcomes serious shortcomings in previous in-situ implementations of CCS based on sputtering or PLD, in particular the variations of thickness across the compositional spread and the differing deposition energetics as function of position. While moving-shutter techniques are appropriate for PLD-approaches yielding complete spreads on small substrates (i.e. small as compared to distances over which the deposition parameters in PLD vary, typically about 1 cm), our method can be used to fabricate samples that are large enough for individual compositions to be analyzed by conventional techniques, including temperature-dependent measurements of resistivity and dielectric and magnetic and properties (i.e. SQUID magnetometry). Initial results are shown for spreads of (Sr,Ca)RuO$_3$.Comment: 6 pages, 8 figures, accepted for publication in Rev. Sci. Instru