2-inch diameter (100) β-Ga2O3 crystal growth by the vertical Bridgman technique in a resistance heating furnace in ambient air

Available online 20 May 2020ArticleJOURNAL OF CRYSTAL GROWTH.545:125724(2020)journal articl

Lateral Effects in Fermion Antibunching

Lateral effects are analyzed in the antibunching of a beam of free non-interacting fermions. The emission of particles from a source is dynamically described in a 3D full quantum field-theoretical framework. The size of the source and the detectors, as well as the temperature of the source are taken into account and the behavior of the visibility is scrutinized as a function of these parameters.Comment: 22 pages, 4 figure

Morphology and formation mechanism of metallic inclusions in VB-grown sapphire crystals

Morphologies of metallic inclusions observed in sapphire crystals grown by the vertical Bridgman (VB) technique using a tungsten (W) crucible were investigated. Square- or hexagonal-shaped inclusions 2-5 mu m in size were observed in sapphire crystals around the interface between the seed and the grown crystal. It was found that such inclusions consisted of W metal used for the crucible. The morphology of some of the inclusions reflects a rhombic dodecahedron which is based on the cubic structure of W and is surrounded by {110} faces. It is probable that inclusions form in the sapphire melt during the crystal growth process, and then sink in the melt to the growth interface due to the high density of W. (C) 2013 Elsevier B.V. All rights reserved.JOURNAL OF CRYSTAL GROWTH. 401:388-391 (2014)journal articl

Growth of β-Ga2O3 single crystals using vertical Bridgman method in ambient air

A new approach to beta-Ga2O3 single crystal growth was studied, using the vertical Bridgman (VB) method in ambient air, while measuring the beta-Ga2O3 melting temperature and investigating the effects of crucible composition and shape. beta-Ga2O3 single crystals 25 mm in diameter were grown in platinum rhodium alloy crucibles in ambient air, with no adhesion of the crystals to the crucible wall. Single crystal growth without a crystal seed was realized by (100) faceted growth with a growth direction perpendicular to the (100) faceted plane. (C) 2016 Elsevier B.V. All rights reserved.ArticleJOURNAL OF CRYSTAL GROWTH.447:36-41(2016)journal articl