Negative differential resistance in nanotube devices

Carbon nanotube junctions are predicted to exhibit negative differential resistance, with very high peak-to-valley current ratios even at room temperature. We treat both nanotube p-n junctions and undoped metal-nanotube-metal junctions, calculating quantum transport through the self-consistent potential within a tight-binding approximation. The undoped junctions in particular may be suitable for device integration.Comment: 4 pages, 4 figures, to appear in Physical Review Letter

Multiple Functionality in Nanotube Transistors

Calculations of quantum transport in a carbon nanotube transistor show that such a device offers unique functionality. It can operate as a ballistic field-effect transistor, with excellent characteristics even when scaled to 10 nm dimensions. At larger gate voltages, channel inversion leads to resonant tunneling through an electrostatically defined nanoscale quantum dot. Thus the transistor becomes a gated resonant tunelling device, with negative differential resistance at a tunable threshold. For the dimensions considered here, the device operates in the Coulomb blockade regime, even at room temperature.Comment: To appear in Phys. Rev. Let

Van Hove Singularities in disordered multichannel quantum wires and nanotubes

We present a theory for the van Hove singularity (VHS) in the tunneling density of states (TDOS) of disordered multichannel quantum wires, in particular multi-wall carbon nanotubes. We assume close-by gates which screen off electron-electron interactions. Diagrammatic perturbation theory within a non-crossing approximation yields analytical expressions governing the disorder-induced broadening and shift of VHS's as new subbands are opened. This problem is nontrivial because the (lowest-order) Born approximation breaks down close to the VHS. Interestingly, compared to the bulk case, the boundary TDOS shows drastically altered VHS, even in the clean limit.Comment: 4 pages, 2 figures, accepted with revisions in PR

Subband population in a single-wall carbon nanotube diode

We observe current rectification in a molecular diode consisting of a semiconducting single-wall carbon nanotube and an impurity. One half of the nanotube has no impurity, and it has a current-voltage (I-V) charcteristic of a typical semiconducting nanotube. The other half of the nanotube has the impurity on it, and its I-V characteristic is that of a diode. Current in the nanotube diode is carried by holes transported through the molecule's one-dimensional subbands. At 77 Kelvin we observe a step-wise increase in the current through the diode as a function of gate voltage, showing that we can control the number of occupied one-dimensional subbands through electrostatic doping.Comment: to appear in Physical Review Letters. 4 pages & 3 figure

Conductance of carbon nanotubes with disorder: A numerical study

We study the conductance of carbon nanotube wires in the presence of disorder, in the limit of phase coherent transport. For this purpose, we have developed a simple numerical procedure to compute transmission through carbon nanotubes and related structures. Two models of disorder are considered, weak uniform disorder and isolated strong scatterers. In the case of weak uniform disorder, our simulations show that the conductance is not significantly affected by disorder when the Fermi energy is close to the band center. Further, the transmission around the band center depends on the diameter of these zero bandgap wires. We also find that the calculated small bias conductance as a function of the Fermi energy exhibits a dip when the Fermi energy is close to the second subband minima. In the presence of strong isolated disorder, our calculations show a transmission gap at the band center, and the corresponding conductance is very small

Size Effects in Carbon Nanotubes

The inter-shell spacing of multi-walled carbon nanotubes was determined by analyzing the high resolution transmission electron microscopy images of these nanotubes. For the nanotubes that were studied, the inter-shell spacing ${\hat{d}_{002}}$ is found to range from 0.34 to 0.39 nm, increasing with decreasing tube diameter. A model based on the results from real space image analysis is used to explain the variation in inter-shell spacings obtained from reciprocal space periodicity analysis. The increase in inter-shell spacing with decreased nanotube diameter is attributed to the high curvature, resulting in an increased repulsive force, associated with the decreased diameter of the nanotube shells.Comment: 4 pages. RevTeX. 4 figure

van der Waals interaction in nanotube bundles : consequences on vibrational modes

We have developed a pair-potential approach for the evaluation of van der Waals interaction between carbon nanotubes in bundles. Starting from a continuum model, we show that the intertube modes range from $5 cm^{-1}$ to $60 cm^{-1}$. Using a non-orthogonal tight-binding approximation for describing the covalent intra-tube bonding in addition, we confirme a slight chiral dependance of the breathing mode frequency and we found that this breathing mode frequency increase by $\sim$ 10 % if the nanotube lie inside a bundle as compared to the isolated tube.Comment: 5 pages, 2 figure

Aharonov-Bohm spectral features and coherence lengths in carbon nanotubes

The electronic properties of carbon nanotubes are investigated in the presence of disorder and a magnetic field parallel or perpendicular to the nanotube axis. In the parallel field geometry, the $\phi_{0}(=hc/e)$-periodic metal-insulator transition (MIT) induced in metallic or semiconducting nanotubes is shown to be related to a chirality-dependent shifting of the energy of the van Hove singularities (VHSs). The effect of disorder on this magnetic field-related mechanism is considered with a discussion of mean free paths, localization lengths and magnetic dephasing rate in the context of recent experiments.Comment: 22 pages, 6 Postscript figures. submitted to Phys. Rev.