Effect of Yttrium substitution on superconductivity in Bi-2212 textured rods prepared by a LFZ technique

In this study, the physical and superconducting properties of the Bi2Sr2Ca1-xYxCu2O8+delta with x=0.0, 0.05, 0.075 0.1, and 0.20 textured superconducting rods prepared by a laser floating zone technique were presented. The effects of Y3+ substitution for Ca2+ have been investigated by X-ray diffraction (XRD), scanning electron microscopy (SEM), energy dispersive X-ray spectroscopy (EDX), dc-magnetization, magnetic hysteresis and critical current density calculation by using the Bean''s critical state model. The powder XRD patterns of the samples have shown the Bi-2212 phase is the major one. Along with the powder samples, the textured rod surfaces also were investigated by XRD. The grains found to be well-oriented along the longitudinal rod axis which is a typical result for superconductors prepared by laser floating zone (LFZ) method, has been observed. The best critical temperature, T-C, has been found as 92.9 K for the sample with 0.15Y substitution, under DC magnetic field of 50 Oe in ZFC mode. It has also been observed that the critical current density decreases with increasing Y-substitution. Using those values, the maximum J(C) value has been determined as 2.37 x 10(5) A/cm(2) for the undoped sample

Exact solution of Schrodinger equation for modified Kratzer's molecular potential with the position-dependent mass

Exact solutions of Schrodinger equation are obtained for the modified Kratzer and the corrected Morse potentials with the position-dependent effective mass. The bound state energy eigenvalues and the corresponding eigenfunctions are calculated for any angular momentum for target potentials. Various forms of point canonical transformations are applied. PACS numbers: 03.65.-w; 03.65.Ge; 12.39.Fd Keywords: Morse potential, Kratzer potential, Position-dependent mass, Point canonical transformation, Effective mass Schr\"{o}dinger equation.Comment: 9 page

Determination of two-dimensional electron and hole gas carriers in AlGaN/GaN/AlN heterostructures grown by Metal Organic Chemical Vapor Deposition

Cataloged from PDF version of article.Resistivity and Hall effect measurements on nominally undoped Al0.25Ga0.75N/GaN/AlN heterostructures grown on sapphire substrates prepared by metal organic chemical vapor deposition have been carried out as a function of temperature (20-300 K) and magnetic field (0-1.4 T). Variable magnetic field Hall data have been analyzed using the improved quantitative mobility spectrum analysis technique. The mobility and density of the two-dimensional electron gas at the AlGaN/GaN interface and the two-dimensional hole gas at the GaN/AIN interface are separated by quantitative mobility spectrum analysis. The analysis shows that two-channel conduction is present in nominally undoped Al0.25Ga0.75N/GaN/AlN heterostructures grown on sapphire substrate. (c) 2007 Elsevier B.V All rights reserved

The persistent photoconductivity effect in AIGaN/GaN heterostructures grown on sapphire and SiC substrates

Cataloged from PDF version of article.In the present study, we reported the results of the investigation of electrical and optical measurements in Al(x)Ga(1-x)N/GaN heterostructures (x=0.20) that were grown by way of metal-organic chemical vapor deposition on sapphire and SiC substrates with the same buffer structures and similar conditions. We investigated the substrate material effects on the electrical and optical properties of Al(0.20)Ga(0.80)N/GaN heterostructures. The related electrical and optical properties of Al(x)Ga(1-x)N/GaN heterostructures were investigated by variable-temperature Hall effect measurements, photoluminescence (PL), photocurrent, and persistent photoconductivity (PPC) that in turn illuminated the samples with a blue (lambda=470 nm) light-emitting diode (LED) and thereby induced a persistent increase in the carrier density and two-dimensional electron gas (2DEG) electron mobility. In sample A (Al(0.20)Ga(0.80)N/GaN/sapphire), the carrier density increased from 7.59x10(12) to 9.9x10(12) cm(-2) via illumination at 30 K. On the other hand, in sample B (Al(0.20)Ga(0.80)N/GaN/SiC), the increments in the carrier density were larger than those in sample A, in which it increased from 7.62x10(12) to 1.23x10(13) cm(-2) at the same temperature. The 2DEG mobility increased from 1.22x10(4) to 1.37x10(4) cm(-2)/V s for samples A and B, in which 2DEG mobility increments occurred from 3.83x10(3) to 5.47x10(3) cm(-2)/V s at 30 K. The PL results show that the samples possessed a strong near-band-edge exciton luminescence line at around 3.44 and 3.43 eV for samples A and B, respectively. The samples showed a broad yellow band spreading from 1.80 to 2.60 eV with a peak maximum at 2.25 eV with a ratio of a near-band-edge excitation peak intensity up to a deep-level emission peak intensity ratio that were equal to 3 and 1.8 for samples A and B, respectively. Both of the samples that were illuminated with three different energy photon PPC decay behaviors can be well described by a stretched-exponential function and relaxation time constant tau as well as a decay exponent beta that changes with the substrate type. The energy barrier for the capture of electrons in the 2DEG channel via the deep-level impurities (DX-like centers) in AlGaN for the Al(0.20)Ga(0.80)N/GaN/sapphire and Al(0.20)Ga(0.80)N/GaN/SiC heterojunction samples are 343 and 228 meV, respectively. The activation energy for the thermal capture of an electron by the defects Delta E changed with the substrate materials. Our results show that the substrate material strongly affects the electrical and optical properties of Al(0.20)Ga(0.80)N/GaN heterostructures. These results can be explained with the differing degrees of the lattice mismatch between the grown layers and substrates. (C) 2008 American Institute of Physics

Electronic transport characterization of AlGaN/GaN heterostructures using quantitative mobility spectrum analysis

Cataloged from PDF version of article.Resistivity and Hall effect measurements in nominally undoped Al0.25Ga0.75N/GaN heterostructures grown on sapphire substrate by metal-organic chemical vapor deposition are carried out as a function of temperature (20-350 K) and magnetic field (0-1.5 T). The measurement results are analyzed using the quantitative mobility spectrum analysis techniques. It is found that there is strong two-dimensional electron gas localization below 100 K, while the thermally activated minority carriers with the activation energies of similar to 58 and similar to 218 meV contribute to the electron transport at high temperatures. (C) 2007 American Institute of Physics

Early postzygotic mutations contribute to de novo variation in a healthy monozygotic twin pair

Cataloged from PDF version of article.Background: Human de novo single-nucleotide variation (SNV) rate is estimated to range between 0.82-1.70×10-8 mutations per base per generation. However, contribution of early postzygotic mutations to the overall human de novo SNV rate is unknown. Methods: We performed deep whole-genome sequencing (more than 30-fold coverage per individual) of the whole-blood-derived DNA samples of a healthy monozygotic twin pair and their parents. We examined the genotypes of each individual simultaneously for each of the SNVs and discovered de novo SNVs regarding the timing of mutagenesis. Putative de novo SNVs were validated using Sanger-based capillary sequencing. Results: We conservatively characterised 23 de novo SNVs shared by the twin pair, 8 de novo SNVs specific to twin I and 1 de novo SNV specific to twin II. Based on the number of de novo SNVs validated by Sanger sequencing and the number of callable bases of each twin, we calculated the overall de novo SNV rate of 1.31×10-8 and 1.01×10-8 for twin I and twin II, respectively. Of these, rates of the early postzygotic de novo SNVs were estimated to be 0.34×10-8 for twin I and 0.04×10-8 for twin II. Conclusions: Early postzygotic mutations constitute a substantial proportion of de novo mutations in humans. Therefore, genome mosaicism resulting from early mitotic events during embryogenesis is common and could substantially contribute to the development of diseases

Structural, morphological, and optical properties of AlGaN/GaN heterostructures with AlN buffer and interlayer

Cataloged from PDF version of article.AlxGa1-xN/GaN (x similar to 0.3) heterostructures with and without a high-temperature (HT) AlN interlayer (IL) have been grown on sapphire (Al2O3) substrates and AlN buffer/Al2O3 templates by metal organic chemical vapor deposition. The effects of an AlN buffer layer (BL) grown on an Al2O3 substrate and an AlN IL grown under the AlGaN ternary layer (TL) on structural, morphological, and optical properties of the heterostructures have been investigated by high-resolution x-ray diffraction, spectroscopic ellipsometry, atomic force microscopy, and photoluminescence measurements. The AlN BL improves the crystal quality of the AlGaN TL. Further improvement is achieved by inserting an AlN IL between GaN BL and AlGaN TL. However, experimental results also show that a HT AlN IL leads to relatively rough surfaces on AlGaN TLs, and an AlN IL changes the strain in the AlGaN TL from tensile to compressive type. In addition, an AlN BL improves the top surface quality of heterostructures. (c) 2007 American Institute of Physics

Double subband occupation of the two-dimensional electron gas in InxAl1− xN/AlN/ GaN/AlN heterostructures with a low indium content (0.064≤x≤0.140) barrier

Cataloged from PDF version of article.We present a carrier transport study on low indium content (0.064≤x≤0.140) InxAl1−xN/AlN/GaN/AlN heterostructures. Experimental Hall data were carried out as a function of temperature (33–300 K) and a magnetic field (0–1.4 T). A two-dimensional electron gas (2DEG) with single or double subbands and a twodimensional hole gas were extracted after implementing quantitative mobility spectrum analysis on the magnetic field dependent Hall data. The mobility of the lowest subband of 2DEG was found to be lower than the mobility of the second subband. This behavior is explained by way of interface related scattering mechanisms, and the results are supported with a one-dimensional self-consistent solution of non-linear Schrödinger–Poisson equations