63 research outputs found
Semiconductor Spintronics
Spintronics refers commonly to phenomena in which the spin of electrons in a
solid state environment plays the determining role. In a more narrow sense
spintronics is an emerging research field of electronics: spintronics devices
are based on a spin control of electronics, or on an electrical and optical
control of spin or magnetism. This review presents selected themes of
semiconductor spintronics, introducing important concepts in spin transport,
spin injection, Silsbee-Johnson spin-charge coupling, and spindependent
tunneling, as well as spin relaxation and spin dynamics. The most fundamental
spin-dependent nteraction in nonmagnetic semiconductors is spin-orbit coupling.
Depending on the crystal symmetries of the material, as well as on the
structural properties of semiconductor based heterostructures, the spin-orbit
coupling takes on different functional forms, giving a nice playground of
effective spin-orbit Hamiltonians. The effective Hamiltonians for the most
relevant classes of materials and heterostructures are derived here from
realistic electronic band structure descriptions. Most semiconductor device
systems are still theoretical concepts, waiting for experimental
demonstrations. A review of selected proposed, and a few demonstrated devices
is presented, with detailed description of two important classes: magnetic
resonant tunnel structures and bipolar magnetic diodes and transistors. In most
cases the presentation is of tutorial style, introducing the essential
theoretical formalism at an accessible level, with case-study-like
illustrations of actual experimental results, as well as with brief reviews of
relevant recent achievements in the field.Comment: tutorial review; 342 pages, 132 figure
Estimation of the proton affinity values of fifteen matrix-assisted laser desorption/ionization matrices under electrospray ionization conditions using the kinetic method
Intact and top-down characterization of biomolecules and direct analysis using infrared matrix-assisted laser desorption electrospray ionization coupled to FT-ICR mass spectrometry
Eignung von Oberflächenbeschichtungen für Klemmkörperfreiläufe im Leerlauf- und Schaltbetrieb
Eignung von Oberflächenbeschichtungen für Klemmkörperfreiläufe im Leerlauf- und Schaltbetrieb
Unconventional Carrier-Mediated Ferromagnetism above Room Temperature in Ion-Implanted (Ga, Mn)P:C
Hydrogen Incorporation and Diffusivity in Plasma-Exposed Bulk ZnO
Hydrogen incorporation depths of \u3e25 μm were obtained in bulk, single-crystal ZnO during exposure to 2H plasmas for 0.5 h at 300 °C, producing an estimated diffusivity of ∼ 8×10−10 cm2/V⋅s at this temperature. The activation energy for diffusion was 0.17±0.12 eV, indicating an interstitial mechanism. Subsequent annealing at 500–600 °C was sufficient to evolve all of the hydrogen out of the ZnO, at least to the sensitivity of secondary ion mass spectrometry (\u3c5×1015 cm−3). The thermal stability of hydrogen retention is slightly greater when the hydrogen is incorporated by direct implantation relative to plasma exposure, due to trapping at residual damage in the former case
Recommended from our members
Neutron total and capture cross section measurements and resonance parameter analysis of tungsten from 0.01 eV to 200 eV
Natural tungsten metal was measured using neutron time-of-flight spectroscopy at the Rensselaer Polytechnic Institute (RPI) Gaerttner Laboratory linear accelerator to determine the tungsten resonance parameters. Three separate measurements were performed: transmission, capture, and self-indication. Previous measurements did not employ all three experiment types and used less sophisticated methods. The current work improves on the published tungsten data base and reduces resonance parameter uncertainties
Hydrogen Incorporation and Diffusivity in Plasma-Exposed Bulk ZnO
Hydrogen incorporation depths of \u3e25 μm were obtained in bulk, single-crystal ZnO during exposure to 2H plasmas for 0.5 h at 300 °C, producing an estimated diffusivity of ∼ 8×10−10 cm2/V⋅s at this temperature. The activation energy for diffusion was 0.17±0.12 eV, indicating an interstitial mechanism. Subsequent annealing at 500–600 °C was sufficient to evolve all of the hydrogen out of the ZnO, at least to the sensitivity of secondary ion mass spectrometry (\u3c5×1015 cm−3). The thermal stability of hydrogen retention is slightly greater when the hydrogen is incorporated by direct implantation relative to plasma exposure, due to trapping at residual damage in the former case
- …