Low Noise Amplifier at 5.8GHz with Cascode and Casc aded Techniques Using T-Matching Network for Wireless Ap plications

This project present a design of a 5.8 GHz low noise amplifier (LNA) design with cascode and cascaded techniques using T-matching network applicable for IEEE 802.16 standard. The amplifier use FHX76LP Low Noise SuperHEMT FET. The LNA designed used T-matching network consisting of lump element reactive element at the input and the output terminal. The cascode and cascaded low noise amplifier (LNA) produced gain of 36.8dB and noise figure (NF) at 1.3dB. The input reflection (S11) and output return loss (S22) are -11.4dB and -12.3dB respectively. The bandwidth of the amplifier is more than 1GHz. The input sensitivity is compliant with the IEEE 802.16 standards.DOI:http://dx.doi.org/10.11591/ijece.v1i1.6

Simulation of Single Stage Cascode Low Noise Amplifier at 5.8GHz Using T-Matching Network

This paper presents a 5.8 GHz single stage cascode low noise amplifier using T-matching techniques for IEEE 802.16 standard. The amplifier use FHX76LP Low Noise SuperHEMT FET. The design simulation process is using Advance Design System (ADS) software. The cascode low noise amplifier (LNA) produced gain of 17.21dB and noise figure (NF) at 0.845dB. The input reflection (S11) and output return loss (S22) are -12.71dB and -15.52dB respectively. The bandwidth of the amplifier is 1GHz. The input sensitivity is complying with the IEEE 802.16 standards

The Cascode and Cascaded Techniques LNA at 5.8GHz Using T-Matching Network for WiMAX Applications

This project presents the cascode and cascaded techniques LNA at 5.8GHz using T-matching network applicable for worldwide interoperability for microwave access (WIMAX) application. The amplifier uses FHX76LP Low Noise SuperHEMT FET. The LNA designed used T-matching network consisting of lump element reactive element at the input and the output terminal. The cascode and cascaded low noise amplifier (LNA) produced gain of 52.4dB and noise figure (NF) at 1.3dB. The input reflection (S11) and output return loss (S22) are -19.71dB and -10.07dB respectively. The bandwidth of the amplifier is more than 1.24GHz. The input sensitivity is compliant with the IEEE 802.16 standards

High Gain of Cascode LNA at 5.8GHz Using T-Matching Network for wireless Applications

This paper presents a design of high gain single stage cascode low noise amplifier (LNA), which operates at 5.8GHz frequency for WIMAX application. The LNA design used T-Matching network consisting of lump reactive element at input and output matching. The design simulation process is using Advance Design System (ADS) software. A cascode low noise amplifier (LNA) produced gain of 19.52dB and noise figure (NF) at 1.195dB. The input reflection (S11) and output return loss (S22) are -18.86dB and -19.49dB respectively. The bandwidth of the amplifier is more than 1GHz. The input sensitivity is complying with the IEEE 802.16 standards. The LNA used FHX76LP low noise SuperHEMT FET transistor from Eudyna Inc

Low Noise Amplifier at 5.8GHz with Cascode and Cascaded Techniques Using T-Matching Network for Wireless Applications

This paper present a 5.8 GHz low noise amplifier (LNA) design with cascode and cascaded techniques using T-matching network applicable for IEEE 802.16 standard. The amplifier use FHX76LP Low Noise SuperHEMT FET. The design simulation process is using Advance Design System (ADS) software. The cascode and cascaded low noise amplifier (LNA) produced gain of 36.52dB and noise figure (NF) at 1.2dB. The input reflection (S11) and output return loss (S22) are -21.1dB and -27.7dB respectively. The bandwidth of the amplifier is more than 1GHz. The input sensitivity is complying with the IEEE 802.16 standards

Design of LNA at 5.8GHz with Cascode and Cascaded Techniques Using T-Matching Network for WiMAX Applications

This project presents a 5.8 GHz Low Noise Amplifier (LNA) design with cascode and cascaded techniques using T-matching network applicable for IEEE 802.16 standard.The amplifier uses the FHX76LP Low Noise SuperHEMT FET. The design simulation process is done by using the Advance Design System (ADS) software. The cascode and cascaded low noise amplifier (LNA) produces a gain of 53.4dB and noise figure (NF) of 1.2dB. The input reflection (S11) and output return loss (S22) are -24.3dB and -23.9dB respectively. The input sensitivity is complying with the IEEE 802.16 standards

High Gain, Low Noise Cascode LNA Using T-Matching Network for Wireless Applications

This paper presents a high gain, low noise Cascoded LNA using T-matching network applicable for wireless applications. The amplifier use FHX76LP Low Noise SuperHEMT FET. The LNA designed used T-matching network consisting of lump reactive element at the input and the output terminal. The cascode low noise amplifier (LNA) produced gain of 18.5 dB and noise figure (NF) of 1.30 dB. The input reflection (S11) and output return loss (S22) are -11.5 dB and -12.3 dB respectively. The bandwidth of the amplifier recorded is 1.4 GHz.The input sensitivity is compliant with the IEEE 802.16 standards

Low Noise Figure of Cascaded LNA at 5.8GHz Using T-Matching Network for WiMAX Applications

This project presents the low Noise Figure (NF) cascaded Low Noise Amplifier (LNA) at 5.8GHz using T-matching network applicable for WiMAX application. The amplifier used FHX76LP Low Noise SuperHEMT FET. The LNA designed used T-matching network consisting of lump reactive element at the input and the output terminal. The cascaded LNA produced noise figure of 1.3 dB and forward gain of 36.8 dB. The input reflection (S11) and output return loss (S22) are -12.4 dB and -12.3 dB respectively. The bandwidth of the amplifier is more than 1.24 GHz. The input sensitivity is compliant with the IEEE 802.16 standards

Design and Fabrication of Radio Frequency Amplifier with 3 dB π-Network Attenuator Isolation

This paper presents the design and fabrication of radio frequency amplifier (RFA), which operates at 5.8 GHz unlicensed frequency for WiMAX application. The RFA designed used T-matching network consisting of lump reactive elements, 3 dB attenuator and microstrip line at the input and output impedance. The RFA developed in this project contribute a gain of 15.6 dB with overall noise figure of 2.4 dB. The overall measured bandwidth is 1.240 GHz with S parameters S11, S12 and S22 measured are -12.4 dB, -25.5 dB and -12.3 dB respectively. The isolation result shows that there is a significant contribution using 3 dB π-network. The RFA used FET transistor EPA018A from Excelics Semiconductor Inc

Wideband 5.8 GHz Radio Frequency Amplifier with 3 dB Π- Network Attenuator Isolation

This paper presents a design of radio frequency amplifier (RFA), which operates at 5.8 GHz frequency for WiMAX application. The RFA designed used T-matching network consisting of lump reactive elements, 3 dB attenuator and microstrip line at the input and output impedance. The RFA developed in this project contribute a gain of 15.6 dB with overall noise figure of 2.4 dB. The overall measured bandwidth measures is 1.240 GHz with S parameters S11, S12 and S22 measured are -12.4 dB, -25.5 dB and -12.3 dB respectively. The RFA used FET transistor EPA018A from Excelics Semiconductor Inc