2,391 research outputs found
Large spin-orbit splitting and weakly-anisotropic superconductivity revealed with single-crystalline noncentrosymmetric CaIrSi3
We report normal and superconducting properties of the Rashba-type
noncentrosymmetric com- pound CaIrSi3, using single crystalline samples with
nearly 100% superconducting volume fraction. The electronic density of states
revealed by the hard x-ray photoemission spectroscopy can be well explained by
the relativistic first-principle band calculation. This indicates that strong
spin-orbit interaction indeed affects the electronic states of this compound.
The obtained H - T phase diagram exhibits only approximately 10% anisotropy,
indicating that the superconducting properties are almost three dimensional.
Nevertheless, strongly anisotropic vortex pinning is observed.Comment: 8 pages, 6 figures, 1 table, accepted for publication in Phys. Rev.
Entropy change at the martensitic transformation in ferromagnetic shape memory alloys Ni_{2+x}Mn_{1-x}Ga
The entropy change between the high-temperature cubic phase and
the low-temperature tetragonally-based martensitic phase of
NiMnGa () alloys was studied. The experimental
results obtained indicate that in the NiMnGa alloys
increases with the Ni excess . The increase of is presumably
accounted for by an increase of magnetic contribution to the entropy change. It
is suggested that the change in modulation of the martensitic phase of
NiMnGa results in discontinuity of the composition dependence
of .Comment: presented at MMM-47, to be published in J. Appl. Phys. (May 15, 2003
Temperature dependence of spin diffusion length in silicon by Hanle-type spin precession
The Hanle-type spin precession method was carried out associated with
non-local magnetoresistance measurement using a highly doped (5\times10^19)
silicon channel. The spin diffusion length obtained by the Hanle-method is in
good agreement with that by the gap dependence of non-local signals. We have
evaluated the interface and bulk channel effects separately, and it was
demonstrated that the major source of temperature dependence of non-local
signals originates from the spin polarization reduction at interface between
the tunnel barrier and silicon.Comment: 12 pages, 4 figure, To appear in Applied Physics Letters
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