50 mm diameter Sn-doped (001) beta-Ga2O3 crystal growth using the vertical Bridgeman technique in ambient air

Available online 3 July 202050 mm-diameter Sn-doped beta-Ga2O3 crystals with growth orientation perpendicular to (001) plane were grown with the newly-developed resistance heating vertical Bridgeman furnace using platinum-rhodium alloy crucibles in ambient air. Weak low angle grain boundaries and several small grains were detected on the both-side mirror polished 50 mm-diameter (001) wafer, using high resolution refraction x-ray topography. However, no imperfections were observed over the whole wafer area when using crossed polarizer analysis. Measured values of both the full width at half maximum and the dislocation densities were widely distributed in the wafer, ranging from 10 to 50 arcsec and 100 to 2000/cm(2) respectively with no distinctive correlations among them. The Sndoped crystals with concentrations ranging from 5 x 10(17) to 5 x 10(18) atom/cm(3) could be grown by Sn-doping in a range from 0.05 to 0.1 mol%, and (001) oriented, 50 mm-diameter n-type oxide semiconductor wafers with a carrier density of 3.6 x 10(18)/cm(3), a mobility of 60 cm(2)/Vsec and a resistivity of 0.03 Omega.cm, were obtained from a 0.1 mol% Sn-doped crystal.ArticleJOURNAL OF CRYSTAL GROWTH.546:125778(2020)journal articl

2-inch diameter (100) β-Ga2O3 crystal growth by the vertical Bridgman technique in a resistance heating furnace in ambient air

Available online 20 May 2020ArticleJOURNAL OF CRYSTAL GROWTH.545:125724(2020)journal articl

Estimation of Buttiker-Landauer traversal time based on the visibility of transmission current

We present a proposal for the estimation of B\"uttiker-Landauer traversal time based on the visibility of transmission current. We analyze the tunneling phenomena with a time-dependent potential and obtain the time-dependent transmission current. We found that the visibility is directly connected to the traversal time. Furthermore, this result is valid not only for rectangular potential barrier but also for general form of potential to which the WKB approximation is applicable . We compared these results with the numerical values obtained from the simulation of Nelson's quantum mechanics. Both of them fit together and it shows our method is very effective to measure experimentally the traversal time.Comment: 12 pages, REVTeX, including 7 eps figure

Morphology and formation mechanism of metallic inclusions in VB-grown sapphire crystals

Morphologies of metallic inclusions observed in sapphire crystals grown by the vertical Bridgman (VB) technique using a tungsten (W) crucible were investigated. Square- or hexagonal-shaped inclusions 2-5 mu m in size were observed in sapphire crystals around the interface between the seed and the grown crystal. It was found that such inclusions consisted of W metal used for the crucible. The morphology of some of the inclusions reflects a rhombic dodecahedron which is based on the cubic structure of W and is surrounded by {110} faces. It is probable that inclusions form in the sapphire melt during the crystal growth process, and then sink in the melt to the growth interface due to the high density of W. (C) 2013 Elsevier B.V. All rights reserved.JOURNAL OF CRYSTAL GROWTH. 401:388-391 (2014)journal articl

Growth of β-Ga2O3 single crystals using vertical Bridgman method in ambient air

A new approach to beta-Ga2O3 single crystal growth was studied, using the vertical Bridgman (VB) method in ambient air, while measuring the beta-Ga2O3 melting temperature and investigating the effects of crucible composition and shape. beta-Ga2O3 single crystals 25 mm in diameter were grown in platinum rhodium alloy crucibles in ambient air, with no adhesion of the crystals to the crucible wall. Single crystal growth without a crystal seed was realized by (100) faceted growth with a growth direction perpendicular to the (100) faceted plane. (C) 2016 Elsevier B.V. All rights reserved.ArticleJOURNAL OF CRYSTAL GROWTH.447:36-41(2016)journal articl

Vertical Bridgman growth of sapphire crystals, with thin-neck formation process

A new technique is proposed in the traditional vertical Bridgman growth of sapphire crystals, in which thin-neck formation follows the initial seeding. Low-angle grain boundaries generated at the periphery of the seeding interface were eliminated at the thin neck, and the c-axis sapphire crystals with main bodies free from low-angle grain boundaries were grown.ArticleJOURNAL OF CRYSTAL GROWTH. 401:146-149 (2014)journal articl

Vertical Bridgman growth of sapphire-Seed crystal shapes and seeding characteristics

The growth of sapphire by the traditional vertical Bridgman (VB) method was studied by using various shapes of seed crystals and tungsten (W) crucibles shaped to match the seeds. Approximately 2-in. diameter, c-axis sapphire single crystals were reproducibly grown from three kinds of seed: thin, tapered and full diameter. Factors relating seed type to single-crystal growth are discussed, including the reproducibility of seeding processes, and the generation and elimination of low-angle grain boundaries (LAGBs). What was learned facilitated the subsequent growth of large-diameter, 3-, 4- and 6-in., c-axis single-crystal sapphires from full-diameter seeds.ArticleJOURNAL OF CRYSTAL GROWTH. 395:80-89 (2014)journal articl

Activity of Rho-family GTPases during cell division as visualized with FRET-based probes

Rho-family GTPases regulate many cellular functions. To visualize the activity of Rho-family GTPases in living cells, we developed fluorescence resonance energy transfer (FRET)–based probes for Rac1 and Cdc42 previously (Itoh, R.E., K. Kurokawa, Y. Ohba, H. Yoshizaki, N. Mochizuki, and M. Matsuda. 2002. Mol. Cell. Biol. 22:6582–6591). Here, we added two types of probes for RhoA. One is to monitor the activity balance between guanine nucleotide exchange factors and GTPase-activating proteins, and another is to monitor the level of GTP-RhoA. Using these FRET probes, we imaged the activities of Rho-family GTPases during the cell division of HeLa cells. The activities of RhoA, Rac1, and Cdc42 were high at the plasma membrane in interphase, and decreased rapidly on entry into M phase. From after anaphase, the RhoA activity increased at the plasma membrane including cleavage furrow. Rac1 activity was suppressed at the spindle midzone and increased at the plasma membrane of polar sides after telophase. Cdc42 activity was suppressed at the plasma membrane and was high at the intracellular membrane compartments during cytokinesis. In conclusion, we could use the FRET-based probes to visualize the complex spatio-temporal regulation of Rho-family GTPases during cell division

Exact results of the mixed-spin Ising model on a decorated square lattice with two different decorating spins of integer magnitudes

The mixed-spin Ising model on a decorated square lattice with two different decorating spins of the integer magnitudes S_B = 1 and S_C = 2 placed on horizontal and vertical bonds of the lattice, respectively, is examined within an exact analytical approach based on the generalized decoration-iteration mapping transformation. Besides the ground-state analysis, finite-temperature properties of the system are also investigated in detail. The most interesting numerical result to emerge from our study relates to a striking critical behaviour of the spontaneously ordered 'quasi-1D' spin system. It was found that this quite remarkable spontaneous order arises when one sub-lattice of the decorating spins (either S_B or S_C) tends towards their 'non-magnetic' spin state S = 0 and the system becomes disordered only upon further single-ion anisotropy strengthening. The effect of single-ion anisotropy upon the temperature dependence of the total and sub-lattice magnetization is also particularly investigated.Comment: 17 pages, 6 figure