9,909 research outputs found
Design of New Logic Architectures Utilizing Optimized Suspended-Gate Single-Electron Transistors
Dynamical Electroweak Symmetry Breaking in SO(5)xU(1) Gauge-Higgs Unification with Top and Bottom Quarks
An SO(5)xU(1) gauge-Higgs unification model in the Randall-Sundrum warped
space with top and bottom quarks is constructed. Additional fermions on the
Planck brane make exotic particles heavy by effectively changing boundary
conditions of bulk fermions from those determined by orbifold conditions. Gauge
couplings of a top quark multiplet trigger electroweak symmetry breaking by the
Hosotani mechanism, simultaneously giving a top quark the observed mass. The
bottom quark mass is generated by combination of brane interactions and the
Hosotani mechanism, where only one ratio of brane masses is relevant when the
scale of brane masses is much larger than the Kaluza-Klein scale (\sim 1.5
TeV). The Higgs mass is predicted to be 49.9 (53.5) GeV for the warp factor
10^{15} (10^{17}). The Wilson line phase turns out \pi/2 and the Higgs
couplings to W and Z vanish so that the LEP2 bound for the Higgs mass is
evaded. In the flat spacetime limit the electroweak symmetry is unbroken.Comment: 35 pages, 2 figures. A few corrections are mad
The impacts of silicon substrate surface conditions on the VLS growth of germanium nanowires
Variation of Electrostatic Coupling and Investigation of Current Percolation Paths in Nanocrystalline Silicon Cross Transistors
Nanocrystalline silicon thin films are promising materials for the development of advanced Large Scale Integration compatible quantum-dot and single-electron charging devices. The films consist of nanometer-scale grains of crystalline silicon, separated by amorphous silicon or silicon dioxide grain boundaries up to a few nanometer thick. These films have been used to fabricate single-electron transistor and memory devices, where the grains form single-electron charging islands isolated by tunnel barriers formed by the grain boundaries. The grain boundary tunnel barrier isolating the grains is also of great importance, as this determines the extent of the electrostatic and tunnel coupling between different grains. These effects can lead to the nanocrystalline silicon thin film behaving as a system of coupled quantum dots.& more..
Enhanced tunnel conductance due to QCA cotunneling processes observed for silicon serial triple quantum dots
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