Computer studies of the scattering of low energy hydrogen ions from polycrystalline solids

Reflection of 50 eV to 10 keV H atoms from polycrystalline Cu, Nb and Au targets has been calculated using the binary collision cascade program MARLOWE. The fractions of particles and energy reflected (backscattered) increase with increasing atomic number of the target and decrease with increasing incident energy. The results indicate that the effects of polycrystallinity are modest, reducing the amorphous reflection coefficients by about 25 percent. The calculations agree quite well with the experimental data for Cu and Au, but are about a factor of two larger than is observed for Nb

Ion-reversibility studies in amorphous solids using the two-atom scattering model. [Rutherford backscattering from disordered solids]

An analytical two-atom scattering model has been developed to treat the recent discovery of the enhancement near 180/sup 0/ of Rutherford backscattering yields from disordered solids. In contrast to conventional calculations of Rutherford backscattering that treat scattering from a single atom only (the backscattering atom), the present model includes the interaction of a second atom lying between the target surface and the backscattering plane. The projectile ion makes a glancing collision with this second atom both before and after it is backscattered. The model predicts an enhancement effect whose physical origin arises from the tolerance of path for those ions whose inward and outward trajectories lie in the vicinity of the critical impact parameter. Results using Moliere scattering show how the yield enhancement depends on ion energy, backscattering depth, exit angle, scattering potential, atomic numbers of the projectile and target, and target density. In the model the critical impact parameter and critical angle play important roles. It is shown that these quantities depend on a single dimensionless parameter and analytical expressions for them are given which are accurate to better than 1%

Extensions to the two atom blocking model

This paper contains viewgraphs on the use of the blocking model to describe atom-atom collisions in solids. Experimental results on two particle emissions for attractive and repulsive coulomb potentials are given. (LSP

Two-atom model in enhanced ion backscattering near 180/sup 0/ scattering angles

The recent discovery by Pronko, Appleton, Holland, and Wilson of an unusual enhancement of the yield of ions backscattered through angles close to 180/sup 0/ from the near surface regions of solids is investigated using a two-atom scattering model. The model predicts an enhancement effect in amorphous solids whose physical origin arises from the tolerance of path for those ions whose inward and outward trajectories lie in the vicinity of the critical impact parameter. Predictions are given of the dependence of the yield enhancement on the following parameters: ion energy, backscattering depth, exit angle, scattering potential, atomic numbers of projectile and target, and atomic density of target

Ion damage calculations in crystalline silicon

Damage profiles in crystalline silicon produced by light (B) and heavy (Bi) ions with energies from 10 to 100 keV were studied using the computer program MARLOWE (version 12). The program follows not only the incident ion collision by collision, but also any Si target atom that is set into motion through an energetic collision. Thus, the transport effect of the complete cascade of recoiled target atoms is included in the damage profile. The influence of channeling was studied for Si(100) using beam tilt angles from the surface normal of 0/sup 0/, 3/sup 0/ and 7/sup 0/ about the (001) or (011) axes. The effects of channeling on the damage profile are twofold: first, there is a large reduction of the central damage peak; second, there is a component of the damage profile that extends considerably deeper into the target than that found in conventional studies using a random target assemblage. The influence of amorphous overlayers of SiO/sub 2/ on the damage and implantation profiles in the Si(100) substrate has also been investigated

Enhanced ion backscattering near 180/sup 0/ scattering angles in the two-atom scattering model. [Ion scattering from solids]

An analytical two-atom scattering model has been developed to treat the recent discovery of the enhancement near 180/sup 0/ of Rutherford backscattering yields from disordered solids. In contrast to conventional calculations of Rutherford backscattering that treat scattering from a single atom only (the backscattering atom), the present model includes the interaction of a second atom lying between the target surface and the backscattering atom. The projectile ion makes a glancing collision with this second atom both before and after it is backscattered. A weighted average is made over all possible positions of this second atom. The model predicts an enhancement effect whose physical origin arises from the tolerance of path for those ions whose ingoing and outgoing trajectories lie in the vicinity of the critical impact parameter. Results using Moliere scattering show how the yield enhancement depends on ion energy, backscattering depth, exit angle, scattering potential, atomic numbers of the projectile and target, and target density. In the model the critical impact parameter and critical angle play important roles. It is shown that these quantities depend on a single dimensionless parameter and formulas accurate to better than 1% are given for them

Ion radiation damage

From international conference applications of ion beams to metals; Albuquerque, New Mexico, USA (2 Oct 1973). The depth distribution of damage energy deposited in solids by energetic ions was calculated and results are compared with the experimental damage found in copper irradiated with 10 sup 16/ 1-MeV protons at ambient temperature. The general form of the experimental damage profile from the transmission-electronmicroscope measurements agrees well with that calculated. 16 figures, 22 references) (auth