4,745 research outputs found

    Optoelectronics with electrically tunable PN diodes in a monolayer dichalcogenide

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    One of the most fundamental devices for electronics and optoelectronics is the PN junction, which provides the functional element of diodes, bipolar transistors, photodetectors, LEDs, and solar cells, among many other devices. In conventional PN junctions, the adjacent p- and n-type regions of a semiconductor are formed by chemical doping. Materials with ambipolar conductance, however, allow for PN junctions to be configured and modified by electrostatic gating. This electrical control enables a single device to have multiple functionalities. Here we report ambipolar monolayer WSe2 devices in which two local gates are used to define a PN junction exclusively within the sheet of WSe2. With these electrically tunable PN junctions, we demonstrate both PN and NP diodes with ideality factors better than 2. Under excitation with light, the diodes show photodetection responsivity of 210 mA/W and photovoltaic power generation with a peak external quantum efficiency of 0.2%, promising numbers for a nearly transparent monolayer sheet in a lateral device geometry. Finally, we demonstrate a light-emitting diode based on monolayer WSe2. These devices provide a fundamental building block for ubiquitous, ultra-thin, flexible, and nearly transparent optoelectronic and electronic applications based on ambipolar dichalcogenide materials.Comment: 14 pages, 4 figure

    Slow dynamics and aging in a non-randomly frustrated spin system

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    A simple, non-disordered spin model has been studied in an effort to understand the origin of the precipitous slowing down of dynamics observed in supercooled liquids approaching the glass transition. A combination of Monte Carlo simulations and exact calculations indicates that this model exhibits an entropy vanishing transition accompanied by a rapid divergence of time scales. Measurements of various correlation functions show that the system displays a hierarchy of time scales associated with different degrees of freedom. Extended structures, arising from the frustration in the system, are identified as the source of the slow dynamics. In the simulations, the system falls out of equilibrium at a temperature TgT_{g} higher than the entropy-vanishing transition temperature and the dynamics below TgT_{g} exhibits aging as distinct from coarsening. The cooling rate dependence of the energy is also consistent with the usual glass formation scenario.Comment: 41 pages, 16 figures. Bibliography file is correcte

    Electrically Tunable Excitonic Light Emitting Diodes based on Monolayer WSe2 p-n Junctions

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    Light-emitting diodes are of importance for lighting, displays, optical interconnects, logic and sensors. Hence the development of new systems that allow improvements in their efficiency, spectral properties, compactness and integrability could have significant ramifications. Monolayer transition metal dichalcogenides have recently emerged as interesting candidates for optoelectronic applications due to their unique optical properties. Electroluminescence has already been observed from monolayer MoS2 devices. However, the electroluminescence efficiency was low and the linewidth broad due both to the poor optical quality of MoS2 and to ineffective contacts. Here, we report electroluminescence from lateral p-n junctions in monolayer WSe2 induced electrostatically using a thin boron nitride support as a dielectric layer with multiple metal gates beneath. This structure allows effective injection of electrons and holes, and combined with the high optical quality of WSe2 it yields bright electroluminescence with 1000 times smaller injection current and 10 times smaller linewidth than in MoS2. Furthermore, by increasing the injection bias we can tune the electroluminescence between regimes of impurity-bound, charged, and neutral excitons. This system has the required ingredients for new kinds of optoelectronic devices such as spin- and valley-polarized light-emitting diodes, on-chip lasers, and two-dimensional electro-optic modulators.Comment: 13 pages main text with 4 figures + 4 pages upplemental material

    Random field sampling for a simplified model of melt-blowing considering turbulent velocity fluctuations

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    In melt-blowing very thin liquid fiber jets are spun due to high-velocity air streams. In literature there is a clear, unsolved discrepancy between the measured and computed jet attenuation. In this paper we will verify numerically that the turbulent velocity fluctuations causing a random aerodynamic drag on the fiber jets -- that has been neglected so far -- are the crucial effect to close this gap. For this purpose, we model the velocity fluctuations as vector Gaussian random fields on top of a k-epsilon turbulence description and develop an efficient sampling procedure. Taking advantage of the special covariance structure the effort of the sampling is linear in the discretization and makes the realization possible

    Doped bilayer antiferromagnets: Hole dynamics on both sides of a magnetic ordering transition

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    The two-layer square lattice quantum antiferromagnet with spins 1/2 shows a magnetic order-disorder transition at a critical ratio of the interplane to intraplane couplings. We investigate the dynamics of a single hole in a bilayer antiferromagnet described by a t-J Hamiltonian. To model the spin background we propose a ground-state wave function for the undoped system which covers both magnetic phases and includes transverse as well as longitudinal spin fluctuations. The photoemission spectrum is calculated using the spin-polaron picture for the whole range of the ratio of the magnetic couplings. This allows for the study of the hole dynamics of both sides of the magnetic order-disorder transition. For small interplane coupling we find a quasiparticle with properties known from the single-layer antiferromagnet, e.g., the dispersion minimum is at (pi/2,pi/2). For large interplane coupling the hole dispersion is similar to that of a free fermion (with reduced bandwidth). The cross-over between these two scenarios occurs inside the antiferromagnetic phase which indicates that the hole dynamics is governed by the local environment of the hole.Comment: 14 pages, 11 figs, minor changes, discussion of spin correlations added, accepted for publication in PR

    Genome-Wide and Differential Proteomic Analysis of Hepatitis B Virus and Aflatoxin B1 Related Hepatocellular Carcinoma in Guangxi, China

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    Both hepatitis B virus (HBV) and aflatoxin B1 (AFB1) exposure can cause liver damage as well as increase the probability of hepatocellular carcinoma (HCC). To investigate the underlying genetic changes that may influence development of HCC associated with HBV infection and AFB1 exposure, HCC patients were subdivided into 4 groups depending upon HBV and AFB1 exposure status: (HBV(+)/AFB1(+), HBV(+)/AFB1(-), HBV(-)/AFB1(+), HBV(-)/AFB1(-)). Genetic abnormalities and protein expression profiles were analyzed by array-based comparative genomic hybridization and isobaric tagging for quantitation. A total of 573 chromosomal aberrations (CNAs) including 184 increased and 389 decreased were detected in our study population. Twenty-five recurrently altered regions (RARs; chromosomal alterations observed in ≥10 patients) in chromosomes were identified. Loss of 4q13.3-q35.2, 13q12.1-q21.2 and gain of 7q11.2-q35 were observed with a higher frequency in the HBV(+)/AFB1(+), HBV(+)/AFB1(-) and HBV(-)/AFB1(+) groups compared to the HBV(-)/AFB(-) group. Loss of 8p12-p23.2 was associated with high TNM stage tumors (P = 0.038) and was an unfavorable prognostic factor for tumor-free survival (P=0.045). A total of 133 differentially expressed proteins were identified in iTRAQ proteomics analysis, 69 (51.8%) of which mapped within identified RARs. The most common biological processes affected by HBV and AFB1 status in HCC tumorigenesis were detoxification and drug metabolism pathways, antigen processing and anti-apoptosis pathways. Expression of AKR1B10 was increased significantly in the HBV(+)/AFB1(+) and HBV(-)/AFB1(+) groups. A significant correlation between the expression of AKR1B10 mRNA and protein levels as well as AKR1B10 copy number was observed, which suggest that AKR1B10 may play a role in AFB1-related hepatocarcinogenesis. In summary, a number of genetic and gene expression alterations were found to be associated with HBV and AFB1- related HCC. The possible synergistic effects of HBV and AFB1 in hepatocarcinogenesis warrant further investigations

    Spectroscopic scanning tunneling microscopy insights into Fe-based superconductors

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    In the first three years since the discovery of Fe-based high Tc superconductors, scanning tunneling microscopy (STM) and spectroscopy have shed light on three important questions. First, STM has demonstrated the complexity of the pairing symmetry in Fe-based materials. Phase-sensitive quasiparticle interference (QPI) imaging and low temperature spectroscopy have shown that the pairing order parameter varies from nodal to nodeless s\pm within a single family, FeTe1-xSex. Second, STM has imaged C4 -> C2 symmetry breaking in the electronic states of both parent and superconducting materials. As a local probe, STM is in a strong position to understand the interactions between these broken symmetry states and superconductivity. Finally, STM has been used to image the vortex state, giving insights into the technical problem of vortex pinning, and the fundamental problem of the competing states introduced when superconductivity is locally quenched by a magnetic field. Here we give a pedagogical introduction to STM and QPI imaging, discuss the specific challenges associated with extracting bulk properties from the study of surfaces, and report on progress made in understanding Fe-based superconductors using STM techniques.Comment: 36 pages, 23 figures, 229 reference

    Study of J/ψJ/\psi and ψ(3686)Σ(1385)0Σˉ(1385)0\psi(3686)\rightarrow\Sigma(1385)^{0}\bar\Sigma(1385)^{0} and Ξ0Ξˉ0\Xi^0\bar\Xi^{0}

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    We study the decays of J/ψJ/\psi and ψ(3686)\psi(3686) to the final states Σ(1385)0Σˉ(1385)0\Sigma(1385)^{0}\bar\Sigma(1385)^{0} and Ξ0Ξˉ0\Xi^0\bar\Xi^{0} based on a single baryon tag method using data samples of (1310.6±7.0)×106(1310.6 \pm 7.0) \times 10^{6} J/ψJ/\psi and (447.9±2.9)×106(447.9 \pm 2.9) \times 10^{6} ψ(3686)\psi(3686) events collected with the BESIII detector at the BEPCII collider. The decays to Σ(1385)0Σˉ(1385)0\Sigma(1385)^{0}\bar\Sigma(1385)^{0} are observed for the first time. The measured branching fractions of J/ψJ/\psi and ψ(3686)Ξ0Ξˉ0\psi(3686)\rightarrow\Xi^0\bar\Xi^{0} are in good agreement with, and much more precise, than the previously published results. The angular parameters for these decays are also measured for the first time. The measured angular decay parameter for J/ψΣ(1385)0Σˉ(1385)0J/\psi\rightarrow\Sigma(1385)^{0}\bar\Sigma(1385)^{0}, α=0.64±0.03±0.10\alpha =-0.64 \pm 0.03 \pm 0.10, is found to be negative, different to the other decay processes in this measurement. In addition, the "12\% rule" and isospin symmetry in the J/ψJ/\psi and ψ(3686)ΞΞˉ\psi(3686)\rightarrow\Xi\bar\Xi and Σ(1385)Σˉ(1385)\Sigma(1385)\bar{\Sigma}(1385) systems are tested.Comment: 11 pages, 7 figures. This version is consistent with paper published in Phys.Lett. B770 (2017) 217-22

    Measurements of absolute hadronic branching fractions of Λc+\Lambda_{c}^{+} baryon

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    Using 567pb1567\rm{pb}^{-1} of e+ee^+e^- collisions recorded at s=4.599GeV\sqrt{s}=4.599\rm{GeV} with the BESIII detector, we report first measurements of absolute hadronic branching fractions of Cabibbo-favored decays of the Λc+\Lambda_{c}^{+} baryon with a double-tag technique. A global least-square fitter is utilized to improve the measured precision. Among the measurements for twelve Λc+\Lambda_{c}^{+} decay modes, the branching fraction for Λc+pKπ+\Lambda_{c}^{+} \rightarrow pK^-\pi^+ is determined to be (5.84±0.27±0.23)%(5.84\pm0.27\pm0.23)\%, where the first uncertainty is statistical and the second is systematic. In addition, the measurements of the branching fractions of the other eleven Cabbibo-favored hadronic decay modes are significantly improved
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