High spin states of cation vacancies in GaP, GaN, AlN, BN, ZnO and BeO: A first principles study

High spin states of cation vacancies in GaP, GaN, AlN, BN, ZnO and BeO were analyzed by first principles calculations. The spin-polarized vacancy-induced level is located in the band gap in GaP, ZnO and BeO. In the nitrides, the stronger exchange coupling forces the vacancy states to be resonant with valence bands, forbids formation of positively charged vacancies in GaN and BN, and allows Al vacancy in p-AlN to assume the highest possible S=2 spin state. The shape of the spin density, isotropic in the zinc blende structure, has a pronounced directional character in the wurtzite structure. Stability of spin polarization of the vacancy states is determined by spin polarization energies of anions, as well as by interatomic distances between the vacancy neighbors, and thus is given by both the lattice constant of the host and the atomic relaxations around the vacancy. Implications for experiment are discussed.Comment: 9 pages, 5 figure

Ag and N acceptors in ZnO: ab initio study of acceptor pairing, doping efficiency, and the role of hydrogen

Efficiency of ZnO doping with Ag and N shallow acceptors, which substitute respectively cations and anions, was investigated. First principles calculations indicate a strong tendency towards formation of nearest neighbor Ag-N pairs and N-Ag-N triangles. Binding of acceptors stems from the formation of quasi-molecular bonds between dopants, and has a universal character in semiconductors. The pairing increases energy levels of impurities, and thus lowers doping efficiency. In the presence of donors, pairing is weaker or even forbidden. However, hydrogen has a tendency to form clusters with Ag and N, which favors the Ag-N aggregation and lowers the acceptor levels of such complexes.Comment: 10 pages, 4 figure

Effect of non-magnetic impurities on the magnetic states of anatase TiO2_2

The electronic and magnetic properties of TiO$_2$, TiO$_{1.75}$, TiO$_{1.75}$N$_{0.25}$, and TiO$_{1.75}$F$_{0.25}$ compounds have been studied by using \emph{ab initio} electronic structure calculations. TiO$_2$ is found to evolve from a wide-band-gap semiconductor to a narrow-band-gap semiconductor to a half-metallic state and finally to a metallic state with oxygen vacancy, N-doping and F-doping, respectively. Present work clearly shows the robust magnetic ground state for N- and F-doped TiO$_2$. The N-doping gives rise to magnetic moment of $\sim$0.4 $\mu_B$ at N-site and $\sim$0.1 $\mu_B$ each at two neighboring O-sites, whereas F-doping creates a magnetic moment of $\sim$0.3 $\mu_B$ at the nearest Ti atom. Here we also discuss the possible cause of the observed magnetic states in terms of the spatial electronic charge distribution of Ti, N and F atoms responsible for bond formation.Comment: 11 pages, 4 figures To appear J. Phys.: Condens. Matte

Ab initio probing of the electronic band structure and Fermi surface of fluorine-doped WO3 as a novel low-TC superconductor

First-principles calculations were performed to investigate the electronic structure and the Fermi surface of the newly discovered low-temperature superconductor: fluorine-doped WO3. We find that F doping provides the transition of the insulating tungsten trioxide into a metallic-like phase WO3-xFx, where the near-Fermi states are formed mainly from W 5d with admixture of O 2p orbitals. The cooperative effect of fluorine additives in WO3 consists in change of electronic concentration as well as the lattice constant. At probing their influence on the near-Fermi states separately, the dominant role of the electronic factor for the transition of tungsten oxyfluoride into superconducting state was established. The volume of the Fermi surface gradually increases with the increase of the doping. In the sequence WO3 \rightarrow WO2.5F0.5 the effective atomic charges of W and O ions decrease, but much less, than it is predicted within the idealized ionic model - owing to presence of the covalent interactions W-O and W-F.Comment: 8 pages, 4 figure