151 research outputs found
Figure of Merit and Limiting Characteristics of Tunable Ferroelectric Microwave Devices
Abstract Microwave application of ferroelectrics is very promising for electrically tunable microwave devices based on the electric field dependence of the dielectric permittivity. Tunable filters and controllable phase shifters are successfully designed as integrated circuits based on multilayer structures containing thin epitaxial ferroelectric (FE) film. As a rule lumped ferroelectric capacitors are used as the tunable components. Quality of the capacitor can be evaluated using Commutation Quality Factor (CQF). There is a unique connection between th
Paraelectric in a Strong High-Frequency Field
A change in the effective permittivity of a ferroelectric film in the
paraelectric phase under the action of a strong high-frequency field
(nonequilibrium soft mode heating) is considered. It is shown that this effect
must be most clearly pronounced far from the resonance (\omega_0 << \omega_sm),
rather than for the external field frequency \omega_0 close to the soft mode
frequency \omega_sm. The effective permittivity as a function of the
high-frequency field amplitude is calculated using the phenomenological
approach and within the microscopic theory based on the simple model of a
displacement-type ferroelectric.Comment: 3 two-column page
High frequency polarization switching of a thin ferroelectric film
We consider both experimentally and analytically the transient oscillatory
process that arises when a rapid change in voltage is applied to a
ferroelectric thin film deposited on an substrate.
High frequency () polarization oscillations are observed
in the ferroelectric sample. These can be understood using a simple
field-polarization model. In particular we obtain analytic expressions for the
oscillation frequency and the decay time of the polarization fluctuation in
terms of the material parameters. These estimations agree well with the
experimental results
Microwave Current Imaging in Passive HTS Components by Low-Temperature Laser Scanning Microscopy (LTLSM)
We have used the LTLSM technique for a spatially resolved investigation of
the microwave transport properties, nonlinearities and material inhomogeneities
in an operating coplanar waveguide YBa_2Cu_3O_{7-\delta} (YBCO) microwave
resonator on an LaAlO_3 (LAO) substrate. The influence of twin-domain blocks,
in-plane rotated grains, and micro-cracks in the YBCO film on the nonuniform rf
current distribution were measured with a micrometer-scale spatial resolution.
The impact of the peaked edge currents and rf field penetration into weak links
on the linear device performance were studied as well. The LTLSM capabilities
and its future potential for non-destructive characterization of the microwave
properties of superconducting circuits are discussed.Comment: 8 pages, 9 figures, 2-column format, presented at High Temperature
Superconductors in High Frequency Fields 2004, Journal of Superconductivity
(in press
Π¨ΠΈΡΠΎΠΊΠΎΠΏΠΎΠ»ΠΎΡΠ½ΡΠΉ Π²ΠΎΠ»Π½ΠΎΠ²ΠΎΠ΄Π½ΠΎ-ΠΌΠΈΠΊΡΠΎΠΏΠΎΠ»ΠΎΡΠΊΠΎΠ²ΡΠΉ ΠΏΠ΅ΡΠ΅Ρ ΠΎΠ΄ Π΄Π»Ρ ΡΠ°ΡΡΠΎΡΠ½ΠΎΠ³ΠΎ Π΄ΠΈΠ°ΠΏΠ°Π·ΠΎΠ½Π° 60 ΠΠΠ¦
Introduction. The frequency band around 60 GHz is one of the most promising to realize new generation communication systems with high data rate due to the utilization of a wide operational frequency band that significantly exceeds traditional frequency bands below 6 GHz. High interest in the development of 60 GHz communication systems is related to the recent evolution of MMIC technology that allows creating effective components for this band and the variety of planar devices. Both are typically realized on printed circuit boards and have interfaces that are based on microstrip lines. The wideband waveguide-to-microstrip transition is required to test various active and passive planar devices with microstrip interfaces in order to provide an effective interconnection between the standard waveguide interface of measurement equipment and planar microstrip structures.Objective. The paper deals with the design of planar wideband waveguide-to-microstrip transition with low insertion loss level in the 60 GHz frequency band.Materials and methods. The main objective is achieved by analyzing of discontinuities in waveguide-tomicrostrip transition structure and their influence on transition characteristics. The transition characteristics are analyzed using full-wave electromagnetic simulation and confirmed with experimental investigation of designed wideband waveguide-to-microstrip transition samples.Results. The designed transition is based on an electromagnetic coupling through a slot aperture in a microstrip line ground plane. The transition is performed without using blind vias in its structure that provides low production cost and al-lows integrating the WR-15 rectangular waveguide in a simple manner without any modifications in the waveguide structure. Results of the electromagnetic simulation are confirmed with experimental investigations of the fabricated waveguide-to-microstrip transition samples. The designed transition provides operation in the nominal bandwidth of the WR-15 waveguide, namely, 50β¦75 GHz with the insertion loss level of 2 dB and with less than 0.8 dB insertion loss level at the 60 GHz frequency.Conclusion. The designed waveguide-to-microstrip transition can be considered as an effective solution for interconnection between various waveguide and microstrip millimeter-wave devices due to its wideband performance, low insertion loss level, simple integration and robustness to the manufacturing tolerances structure.ΠΠ²Π΅Π΄Π΅Π½ΠΈΠ΅. Π§Π°ΡΡΠΎΡΠ½ΡΠΉ Π΄ΠΈΠ°ΠΏΠ°Π·ΠΎΠ½ Π²Π±Π»ΠΈΠ·ΠΈ 60 ΠΠΡ β ΠΎΠ΄ΠΈΠ½ ΠΈΠ· Π½Π°ΠΈΠ±ΠΎΠ»Π΅Π΅ ΠΏΠ΅ΡΡΠΏΠ΅ΠΊΡΠΈΠ²Π½ΡΡ
Π΄Π»Ρ ΡΠΎΠ·Π΄Π°Π½ΠΈΡ Π²ΡΡΠΎΠΊΠΎΡΠΊΠΎΡΠΎΡΡΠ½ΡΡ
ΡΠΈΡΡΠ΅ΠΌ ΡΠ²ΡΠ·ΠΈ Π½ΠΎΠ²ΠΎΠ³ΠΎ ΠΏΠΎΠΊΠΎΠ»Π΅Π½ΠΈΡ Π·Π° ΡΡΠ΅Ρ ΠΈΡΠΏΠΎΠ»ΡΠ·ΠΎΠ²Π°Π½ΠΈΡ ΡΠΈΡΠΎΠΊΠΎΠΉ ΠΏΠΎΠ»ΠΎΡΡ ΡΠ°ΡΡΠΎΡ ΠΏΠ΅ΡΠ΅Π΄Π°Π²Π°Π΅ΠΌΡΡ
ΡΠΈΠ³Π½Π°Π»ΠΎΠ², ΡΡΡΠ΅ΡΡΠ²Π΅Π½Π½ΠΎ ΠΏΡΠ΅Π²ΡΡΠ°ΡΡΠ΅ΠΉ Π΄ΠΎΡΡΡΠΏΠ½ΡΠ΅ Π·Π½Π°ΡΠ΅Π½ΠΈΡ Π΄ΠΎ 6 ΠΠΡ Π² ΡΡΠ°Π΄ΠΈΡΠΈΠΎΠ½Π½ΡΡ
ΡΠ°ΡΡΠΎΡΠ½ΡΡ
Π΄ΠΈΠ°ΠΏΠ°Π·ΠΎΠ½Π°Ρ
. ΠΠΊΡΠΈΠ²Π½ΠΎΠ΅ ΡΠ°Π·Π²ΠΈΡΠΈΠ΅ ΡΠΈΡΡΠ΅ΠΌ ΡΠ²ΡΠ·ΠΈ Π΄ΠΈΠ°ΠΏΠ°Π·ΠΎΠ½Π° ΠΎΠΊΠΎΠ»ΠΎ 60 ΠΠΡ ΠΏΠΎΠ΄ΠΊΡΠ΅ΠΏΠ»ΡΠ΅ΡΡΡ ΡΠ°ΡΡΠΈΡΠ΅Π½ΠΈΠ΅ΠΌ ΠΌΠ½ΠΎΠ³ΠΎΠΎΠ±ΡΠ°Π·ΠΈΡ ΡΠΎΠΎΡΠ²Π΅ΡΡΡΠ²ΡΡΡΠΈΡ
ΠΏΠΎΠ»ΡΠΏΡΠΎΠ²ΠΎΠ΄Π½ΠΈΠΊΠΎΠ²ΡΡ
ΠΊΠΎΠΌΠΏΠΎΠ½Π΅Π½ΡΠΎΠ² ΠΈ ΠΏΠ»Π°Π½Π°ΡΠ½ΡΡ
ΡΡΡΡΠΎΠΉΡΡΠ², ΡΠ΅Π°Π»ΠΈΠ·ΡΠ΅ΠΌΡΡ
Π½Π° Π‘ΠΠ§ ΠΏΠ΅ΡΠ°ΡΠ½ΡΡ
ΠΏΠ»Π°ΡΠ°Ρ
ΠΈ ΠΈΠΌΠ΅ΡΡΠΈΡ
ΠΈΠ½ΡΠ΅ΡΡΠ΅ΠΉΡ Π½Π° ΠΎΡΠ½ΠΎΠ²Π΅ ΠΌΠΈΠΊΡΠΎΠΏΠΎΠ»ΠΎΡΠΊΠΎΠ²ΡΡ
Π»ΠΈΠ½ΠΈΠΉ ΠΏΠ΅ΡΠ΅Π΄Π°ΡΠΈ. ΠΠ»Ρ ΠΈΠ·ΠΌΠ΅ΡΠ΅Π½ΠΈΡ ΠΈ ΠΎΡΠ»Π°Π΄ΠΊΠΈ ΠΏΠΎΠ»ΡΠΏΡΠΎΠ²ΠΎΠ΄Π½ΠΈΠΊΠΎΠ²ΡΡ
ΠΊΠΎΠΌΠΏΠΎΠ½Π΅Π½ΡΠΎΠ² ΠΈ ΠΏΠ»Π°Π½Π°ΡΠ½ΡΡ
ΡΡΡΡΠΎΠΉΡΡΠ² Π²ΠΎΠ·Π½ΠΈΠΊΠ°Π΅Ρ Π½Π΅ΠΎΠ±Ρ
ΠΎΠ΄ΠΈΠΌΠΎΡΡΡ ΠΈΡ
ΡΠΎΠ΅Π΄ΠΈΠ½Π΅Π½ΠΈΡ Ρ Π²ΠΎΠ»Π½ΠΎΠ²ΠΎΠ΄Π½ΡΠΌ ΠΈΠ½ΡΠ΅ΡΡΠ΅ΠΉΡΠΎΠΌ ΠΈΠ·ΠΌΠ΅ΡΠΈΡΠ΅Π»ΡΠ½ΠΎΠ³ΠΎ ΠΎΠ±ΠΎΡΡΠ΄ΠΎΠ²Π°Π½ΠΈΡ, ΡΡΠΎ ΠΌΠΎΠΆΠ΅Ρ Π±ΡΡΡ Π²ΡΠΏΠΎΠ»Π½Π΅Π½ΠΎ Ρ ΠΏΠΎΠΌΠΎΡΡΡ Π²ΠΎΠ»Π½ΠΎΠ²ΠΎΠ΄Π½ΠΎ-ΠΌΠΈΠΊΡΠΎΠΏΠΎΠ»ΠΎΡΠΊΠΎΠ²ΠΎΠ³ΠΎ ΠΏΠ΅ΡΠ΅Ρ
ΠΎΠ΄Π°.Π¦Π΅Π»Ρ ΡΠ°Π±ΠΎΡΡ. Π Π°Π·ΡΠ°Π±ΠΎΡΠΊΠ° ΠΈ ΠΈΡΡΠ»Π΅Π΄ΠΎΠ²Π°Π½ΠΈΠ΅ ΠΏΠ»Π°Π½Π°ΡΠ½ΠΎΠ³ΠΎ ΡΠΈΡΠΎΠΊΠΎΠΏΠΎΠ»ΠΎΡΠ½ΠΎΠ³ΠΎ Π²ΠΎΠ»Π½ΠΎΠ²ΠΎΠ΄Π½ΠΎ-ΠΌΠΈΠΊΡΠΎΠΏΠΎΠ»ΠΎΡΠΊΠΎΠ²ΠΎΠ³ΠΎ ΠΏΠ΅ΡΠ΅Ρ
ΠΎΠ΄Π° Π΄Π»Ρ ΡΠ°ΡΡΠΎΡΠ½ΠΎΠ³ΠΎ Π΄ΠΈΠ°ΠΏΠ°Π·ΠΎΠ½Π° ΠΎΠΊΠΎΠ»ΠΎ 60 ΠΠΡ, ΠΎΠ±Π΅ΡΠΏΠ΅ΡΠΈΠ²Π°ΡΡΠ΅Π³ΠΎ ΠΌΠ°Π»ΡΠΉ ΡΡΠΎΠ²Π΅Π½Ρ Π²Π½ΠΎΡΠΈΠΌΡΡ
ΠΏΠΎΡΠ΅ΡΡ.ΠΠ°ΡΠ΅ΡΠΈΠ°Π»Ρ ΠΈ ΠΌΠ΅ΡΠΎΠ΄Ρ. ΠΠ»Ρ Π΄ΠΎΡΡΠΈΠΆΠ΅Π½ΠΈΡ ΠΏΠΎΡΡΠ°Π²Π»Π΅Π½Π½ΠΎΠΉ ΡΠ΅Π»ΠΈ ΠΏΡΠΎΠ°Π½Π°Π»ΠΈΠ·ΠΈΡΠΎΠ²Π°Π½ΠΎ Π²Π»ΠΈΡΠ½ΠΈΠ΅ Π½Π΅ΠΎΠ΄Π½ΠΎΡΠΎΠ΄Π½ΠΎΡΡΠ΅ΠΉ Π² ΡΡΡΡΠΊΡΡΡΠ΅ ΠΏΠ΅ΡΠ΅Ρ
ΠΎΠ΄Π° Π½Π° Π΅Π³ΠΎ Ρ
Π°ΡΠ°ΠΊΡΠ΅ΡΠΈΡΡΠΈΠΊΠΈ, Π° ΡΠ°ΠΊΠΆΠ΅ ΠΈΡΡΠ»Π΅Π΄ΠΎΠ²Π°Π½Ρ ΠΌΠ΅ΡΠΎΠ΄Ρ ΡΡΡΡΠ°Π½Π΅Π½ΠΈΡ ΡΠ°ΠΊΠΈΡ
Π½Π΅ΠΎΠ΄Π½ΠΎΡΠΎΠ΄Π½ΠΎΡΡΠ΅ΠΉ. ΠΠ½Π°Π»ΠΈΠ· Π²Π»ΠΈΡΠ½ΠΈΡ Π½Π΅ΠΎΠ΄Π½ΠΎΡΠΎΠ΄Π½ΠΎΡΡΠ΅ΠΉ ΠΈ ΡΠ°ΡΡΠ΅Ρ Ρ
Π°ΡΠ°ΠΊΡΠ΅ΡΠΈΡΡΠΈΠΊ ΡΠ°Π·ΡΠ°Π±ΠΎΡΠ°Π½Π½ΠΎΠ³ΠΎ ΠΏΠ΅ΡΠ΅Ρ
ΠΎΠ΄Π° Π²ΡΠΏΠΎΠ»Π½Π΅Π½Ρ Ρ ΠΏΠΎΠΌΠΎΡΡΡ ΡΠ»Π΅ΠΊΡΡΠΎΠ΄ΠΈΠ½Π°ΠΌΠΈΡΠ΅ΡΠΊΠΎΠ³ΠΎ ΠΌΠΎΠ΄Π΅Π»ΠΈΡΠΎΠ²Π°Π½ΠΈΡ ΠΈ ΠΏΠΎΠ΄ΡΠ²Π΅ΡΠΆΠ΄Π΅Π½Ρ ΡΠ΅Π·ΡΠ»ΡΡΠ°ΡΠ°ΠΌΠΈ ΡΠΊΡΠΏΠ΅ΡΠΈΠΌΠ΅Π½ΡΠ°Π»ΡΠ½ΠΎΠ³ΠΎ ΠΈΡΡΠ»Π΅Π΄ΠΎΠ²Π°Π½ΠΈΡ ΠΈΠ·Π³ΠΎΡΠΎΠ²Π»Π΅Π½Π½ΡΡ
ΠΎΠ±ΡΠ°Π·ΡΠΎΠ² ΡΠΈΡΠΎΠΊΠΎΠΏΠΎΠ»ΠΎΡΠ½ΠΎΠ³ΠΎ Π²ΠΎΠ»Π½ΠΎΠ²ΠΎΠ΄Π½ΠΎ-ΠΌΠΈΠΊΡΠΎΠΏΠΎΠ»ΠΎΡΠΊΠΎΠ²ΠΎΠ³ΠΎ ΠΏΠ΅ΡΠ΅Ρ
ΠΎΠ΄Π°.Π Π΅Π·ΡΠ»ΡΡΠ°ΡΡ. Π Π°Π·ΡΠ°Π±ΠΎΡΠ°Π½Π½ΡΠΉ ΠΏΠ΅ΡΠ΅Ρ
ΠΎΠ΄ ΠΎΡΠ½ΠΎΠ²Π°Π½ Π½Π° ΡΠ»Π΅ΠΊΡΡΠΎΠΌΠ°Π³Π½ΠΈΡΠ½ΠΎΠΌ Π²Π·Π°ΠΈΠΌΠΎΠ΄Π΅ΠΉΡΡΠ²ΠΈΠΈ ΡΠ΅ΡΠ΅Π· ΡΠ΅Π»Π΅Π²ΡΡ Π°ΠΏΠ΅ΡΡΡΡΡ Π² ΡΠΊΡΠ°Π½Π΅ ΠΌΠΈΠΊΡΠΎΠΏΠΎΠ»ΠΎΡΠΊΠΎΠ²ΠΎΠΉ Π»ΠΈΠ½ΠΈΠΈ ΠΈ Π½Π΅ ΡΠΎΠ΄Π΅ΡΠΆΠΈΡ Π² ΡΠ²ΠΎΠ΅ΠΉ ΡΡΡΡΠΊΡΡΡΠ΅ ΡΠ»Π΅ΠΏΡΡ
ΠΏΠ΅ΡΠ΅Ρ
ΠΎΠ΄Π½ΡΡ
ΠΎΡΠ²Π΅ΡΡΡΠΈΠΉ, ΡΠ°ΡΡΠΎ ΠΏΡΠΈΠΌΠ΅Π½ΡΠ΅ΠΌΡΡ
Π΄Π»Ρ ΠΏΠ΅ΡΠ΅Ρ
ΠΎΠ΄ΠΎΠ² ΠΌΠΈΠ»Π»ΠΈΠΌΠ΅ΡΡΠΎΠ²ΠΎΠ³ΠΎ Π΄ΠΈΠ°ΠΏΠ°Π·ΠΎΠ½Π° ΡΠ°ΡΡΠΎΡ, Π½ΠΎ Π·Π½Π°ΡΠΈΡΠ΅Π»ΡΠ½ΠΎ ΡΠ²Π΅Π»ΠΈΡΠΈΠ²Π°ΡΡΠΈΡ
ΡΠ»ΠΎΠΆΠ½ΠΎΡΡΡ ΠΈ ΡΡΠΎΠΈΠΌΠΎΡΡΡ ΠΈΠ·Π³ΠΎΡΠΎΠ²Π»Π΅Π½ΠΈΡ. ΠΠ΅ΡΠ΅Ρ
ΠΎΠ΄ Π²ΡΠΏΠΎΠ»Π½Π΅Π½ Ρ Π²ΠΎΠ·ΠΌΠΎΠΆΠ½ΠΎΡΡΡΡ Π½Π΅ΠΏΠΎΡΡΠ΅Π΄ΡΡΠ²Π΅Π½Π½ΠΎΠ³ΠΎ ΠΏΠΎΠ΄ΡΠΎΠ΅Π΄ΠΈΠ½Π΅Π½ΠΈΡ ΠΊ ΠΎΡΡΠ΅Π·ΠΊΡ ΠΏΡΡΠΌΠΎΡΠ³ΠΎΠ»ΡΠ½ΠΎΠ³ΠΎ Π²ΠΎΠ»Π½ΠΎΠ²ΠΎΠ΄Π° ΡΡΠ°Π½Π΄Π°ΡΡΠ½ΠΎΠ³ΠΎ ΡΠ΅ΡΠ΅Π½ΠΈΡ WR-15 Π±Π΅Π· Π΄ΠΎΠΏΠΎΠ»Π½ΠΈΡΠ΅Π»ΡΠ½ΡΡ
ΠΌΠΎΠ΄ΠΈΡΠΈΠΊΠ°ΡΠΈΠΉ Π² ΡΡΡΡΠΊΡΡΡΠ΅ Π²ΠΎΠ»Π½ΠΎΠ²ΠΎΠ΄Π°. ΠΠΎ ΡΠ΅Π·ΡΠ»ΡΡΠ°ΡΠ°ΠΌ ΠΌΠΎΠ΄Π΅Π»ΠΈΡΠΎΠ²Π°Π½ΠΈΡ ΠΈ ΡΠΊΡΠΏΠ΅ΡΠΈΠΌΠ΅Π½ΡΠ°Π»ΡΠ½ΠΎΠ³ΠΎ ΠΈΡΡΠ»Π΅Π΄ΠΎΠ²Π°Π½ΠΈΡ ΠΏΠΎΠ»ΠΎΡΠ° ΠΏΡΠΎΠΏΡΡΠΊΠ°Π½ΠΈΡ ΠΏΠ΅ΡΠ΅Ρ
ΠΎΠ΄Π° ΡΠ°Π²Π½Π° ΠΏΠΎΠ»Π½ΠΎΠΉ ΠΏΠΎΠ»ΠΎΡΠ΅ ΠΏΡΠΎΠΏΡΡΠΊΠ°Π½ΠΈΡ Π²ΠΎΠ»Π½ΠΎΠ²ΠΎΠ΄Π° WR-15, Π° ΠΈΠΌΠ΅Π½Π½ΠΎ 50...75 ΠΠΡ ΠΏΠΎ ΡΡΠΎΠ²Π½Ρ β2 Π΄Π ΠΊΠΎΡΡΡΠΈΡΠΈΠ΅Π½ΡΠ° ΠΏΡΠΎΡ
ΠΎΠΆΠ΄Π΅Π½ΠΈΡ, Π° ΠΏΠΎΡΠ΅ΡΠΈ, Π²Π½ΠΎΡΠΈΠΌΡΠ΅ Π² ΠΏΠ΅ΡΠ΅Π΄Π°Π²Π°Π΅ΠΌΡΠΉ ΡΠΈΠ³Π½Π°Π», Π½Π΅ ΠΏΡΠ΅Π²ΡΡΠ°ΡΡ 0.8 Π΄Π Π½Π° ΡΠ°ΡΡΠΎΡΠ΅ 60 ΠΠΡ.ΠΠ°ΠΊΠ»ΡΡΠ΅Π½ΠΈΠ΅. Π¨ΠΈΡΠΎΠΊΠ°Ρ ΠΏΠΎΠ»ΠΎΡΠ° ΠΏΡΠΎΠΏΡΡΠΊΠ°Π½ΠΈΡ ΡΠΈΠ³Π½Π°Π»Π°, Π½Π΅Π±ΠΎΠ»ΡΡΠΈΠ΅ ΠΏΠΎΡΠ΅ΡΠΈ, ΡΡΡΠΎΠΉΡΠΈΠ²ΠΎΡΡΡ ΠΊ Π½Π΅ΡΠΎΡΠ½ΠΎΡΡΡΠΌ ΠΈΠ·Π³ΠΎΡΠΎΠ²Π»Π΅Π½ΠΈΡ ΠΈ ΠΏΡΠΎΡΡΠΎΡΠ° ΠΈΠ½ΡΠ΅Π³ΡΠ°ΡΠΈΠΈ ΠΏΠΎΠ·Π²ΠΎΠ»ΡΡΡ ΠΈΡΠΏΠΎΠ»ΡΠ·ΠΎΠ²Π°ΡΡ Π²ΠΎΠ»Π½ΠΎΠ²ΠΎΠ΄Π½ΠΎ-ΠΌΠΈΠΊΡΠΎΠΏΠΎΠ»ΠΎΡΠΊΠΎΠ²ΡΠΉ ΠΏΠ΅ΡΠ΅Ρ
ΠΎΠ΄ Π΄Π»Ρ ΡΠΎΠ΅Π΄ΠΈΠ½Π΅Π½ΠΈΡ ΡΠ°Π·Π»ΠΈΡΠ½ΡΡ
ΠΌΠΈΠΊΡΠΎΠΏΠΎΠ»ΠΎΡΠΊΠΎΠ²ΡΡ
ΠΈ Π²ΠΎΠ»Π½ΠΎΠ²ΠΎΠ΄Π½ΡΡ
ΡΡΡΡΠΎΠΉΡΡΠ² ΠΌΠΈΠ»Π»ΠΈΠΌΠ΅ΡΡΠΎΠ²ΠΎΠ³ΠΎ Π΄ΠΈΠ°ΠΏΠ°Π·ΠΎΠ½Π° Π΄Π»ΠΈΠ½ Π²ΠΎΠ»Π½
Π¨ΠΈΡΠΎΠΊΠΎΠΏΠΎΠ»ΠΎΡΠ½ΡΠΉ Π²ΠΎΠ»Π½ΠΎΠ²ΠΎΠ΄Π½ΠΎ-ΠΌΠΈΠΊΡΠΎΠΏΠΎΠ»ΠΎΡΠΊΠΎΠ²ΡΠΉ ΠΏΠ΅ΡΠ΅Ρ ΠΎΠ΄ Π·ΠΎΠ½Π΄ΠΎΠ²ΠΎΠ³ΠΎ ΡΠΈΠΏΠ° ΠΌΠΈΠ»Π»ΠΈΠΌΠ΅ΡΡΠΎΠ²ΠΎΠ³ΠΎ Π΄ΠΈΠ°ΠΏΠ°Π·ΠΎΠ½Π° Π΄Π»ΠΈΠ½ Π²ΠΎΠ»Π½
Introduction. Increased data rate in modern communication systems can be achieved by raising the operational frequency to millimeter wave range where wide transmission bands are available. In millimeter wave communication systems, the passive components of the antenna feeding system, which are based on hollow metal waveguides, and active elements of the radiofrequency circuit, which have an interface constructed on planar printed circuit boards (PCB) are interconnected using waveguide-to-microstrip transition.Aim. To design and investigate a high-performance wideband and low loss waveguide-to-microstrip transition dedicated to the 60 GHz frequency range applications that can provide effective transmission of signals between the active components of the radiofrequency circuit and the passive components of the antenna feeding systemMaterials and methods. Full-wave electromagnetic simulations in the CST Microwave Studio software were used to estimate the impact of the substrate material and metal foil on the characteristics of printed structures and to calculate the waveguide-to-microstrip transition characteristics. The results were confirmed via experimental investigation of fabricated wideband transition samples using a vector network analyzer Results. The probe-type transition consist of a PCB fixed between a standard WR-15 waveguide and a back-short with a simple structure and the same cross-section. The proposed transition also includes two through-holes on the PCB in the center of the transition area on either side of the probe. A significant part of the lossy PCB dielectric is removed from that area, thus providing wideband and low-loss performance of the transition without any additional matching elements. The design of the transition was adapted for implementation on the PCBs made of two popular dielectric materials RO4350B and RT/Duroid 5880. The results of full-wave simulation and experimental investigation of the designed waveguide to microstrip transition are presented. The transmission bandwidth for reflection coefficient S11 < β10 dB is in excess of 50β¦70 GHz. The measured insertion loss for a single transition is 0.4 and 0.7 dB relatively for transitions based on RO4350B and RT/Duroid 5880.Conclusion. The proposed method of insertion loss reduction in the waveguide-to-microstrip transition provides effective operation due to reduction of the dielectric substrate portion in the transition region for various high-frequency PCB materials. The designed waveguide-to -microstrip transition can be considered as an effective solution for interconnection between the waveguide and microstrip elements of the various millimeter-wave devices dedicated for the 60 GHz frequency range applications.ΠΠ²Π΅Π΄Π΅Π½ΠΈΠ΅. ΠΠ»Ρ ΡΠ²Π΅Π»ΠΈΡΠ΅Π½ΠΈΡ ΡΠΊΠΎΡΠΎΡΡΠΈ ΠΏΠ΅ΡΠ΅Π΄Π°ΡΠΈ Π΄Π°Π½Π½ΡΡ
Π² ΡΠΎΠ²ΡΠ΅ΠΌΠ΅Π½Π½ΡΡ
ΡΠΈΡΡΠ΅ΠΌΠ°Ρ
Π±Π΅ΡΠΏΡΠΎΠ²ΠΎΠ΄Π½ΠΎΠΉ ΡΠ°Π΄ΠΈΠΎΡΠ²ΡΠ·ΠΈ Π½Π΅ΠΎΠ±Ρ
ΠΎΠ΄ΠΈΠΌΠΎ ΡΡΡΠ΅ΡΡΠ²Π΅Π½Π½ΠΎΠ΅ ΡΠ°ΡΡΠΈΡΠ΅Π½ΠΈΠ΅ ΠΏΠΎΠ»ΠΎΡΡ ΡΠ°ΡΡΠΎΡ ΠΏΠ΅ΡΠ΅Π΄Π°Π²Π°Π΅ΠΌΡΡ
ΡΠΈΠ³Π½Π°Π»ΠΎΠ², ΡΡΠΎ Π²ΠΎΠ·ΠΌΠΎΠΆΠ½ΠΎ Π·Π° ΡΡΠ΅Ρ ΡΠ²Π΅Π»ΠΈΡΠ΅Π½ΠΈΡ ΡΠ°Π±ΠΎΡΠ΅ΠΉ ΡΠ°ΡΡΠΎΡΡ Π΄ΠΎ ΠΌΠΈΠ»Π»ΠΈΠΌΠ΅ΡΡΠΎΠ²ΠΎΠ³ΠΎ Π΄ΠΈΠ°ΠΏΠ°Π·ΠΎΠ½Π°. Π ΡΠΈΡΡΠ΅ΠΌΠ°Ρ
ΡΠ°Π΄ΠΈΠΎΡΠ²ΡΠ·ΠΈ ΠΌΠΈΠ»Π»ΠΈΠΌΠ΅ΡΡΠΎΠ²ΠΎΠ³ΠΎ Π΄ΠΈΠ°ΠΏΠ°Π·ΠΎΠ½Π° ΡΠΎΠ΅Π΄ΠΈΠ½Π΅Π½ΠΈΠ΅ ΠΏΠ°ΡΡΠΈΠ²Π½ΡΡ
ΡΠ»Π΅ΠΌΠ΅Π½ΡΠΎΠ² Π°Π½ΡΠ΅Π½Π½ΠΎ-ΡΠΈΠ΄Π΅ΡΠ½ΠΎΠ³ΠΎ ΡΡΠ°ΠΊΡΠ°, ΡΠ΅Π°Π»ΠΈΠ·ΠΎΠ²Π°Π½Π½ΡΡ
Π½Π° ΠΌΠ΅ΡΠ°Π»Π»ΠΈΡΠ΅ΡΠΊΠΈΡ
Π²ΠΎΠ»Π½ΠΎΠ²ΠΎΠ΄Π°Ρ
, ΠΈ Π°ΠΊΡΠΈΠ²Π½ΡΡ
ΡΠ»Π΅ΠΌΠ΅Π½ΡΠΎΠ² ΡΠ°Π΄ΠΈΠΎΡΠ°ΡΡΠΎΡΠ½ΠΎΠ³ΠΎ ΡΡΠ°ΠΊΡΠ°, ΠΈΠΌΠ΅ΡΡΠΈΡ
ΠΈΠ½ΡΠ΅ΡΡΠ΅ΠΉΡ Π½Π° ΠΎΡΠ½ΠΎΠ²Π΅ ΠΌΠΈΠΊΡΠΎΠΏΠΎΠ»ΠΎΡΠΊΠΎΠ²ΡΡ
Π»ΠΈΠ½ΠΈΠΉ, ΠΎΡΡΡΠ΅ΡΡΠ²Π»ΡΠ΅ΡΡΡ Ρ ΠΏΠΎΠΌΠΎΡΡΡ Π²ΠΎΠ»Π½ΠΎΠ²ΠΎΠ΄Π½ΠΎ-ΠΌΠΈΠΊΡΠΎΠΏΠΎΠ»ΠΎΡΠΊΠΎΠ²ΠΎΠ³ΠΎ ΠΏΠ΅ΡΠ΅Ρ
ΠΎΠ΄Π° (ΠΠΠΠ).Π¦Π΅Π»Ρ ΡΠ°Π±ΠΎΡΡ. Π Π°Π·ΡΠ°Π±ΠΎΡΠΊΠ° ΠΈ ΠΈΡΡΠ»Π΅Π΄ΠΎΠ²Π°Π½ΠΈΠ΅ ΡΠΈΡΠΎΠΊΠΎΠΏΠΎΠ»ΠΎΡΠ½ΠΎΠ³ΠΎ ΠΠΠΠ Π΄Π»Ρ ΡΠ°ΡΡΠΎΡΠ½ΠΎΠ³ΠΎ Π΄ΠΈΠ°ΠΏΠ°Π·ΠΎΠ½Π° 60 ΠΠΡ Ρ Π½ΠΈΠ·ΠΊΠΈΠΌ ΡΡΠΎΠ²Π½Π΅ΠΌ ΠΏΠΎΡΠ΅ΡΡ Π΄Π»Ρ ΡΡΡΠ΅ΠΊΡΠΈΠ²Π½ΠΎΠΉ ΠΏΠ΅ΡΠ΅Π΄Π°ΡΠΈ ΡΠΈΠ³Π½Π°Π»ΠΎΠ² ΠΌΠ΅ΠΆΠ΄Ρ Π°ΠΊΡΠΈΠ²Π½ΡΠΌΠΈ ΡΠ»Π΅ΠΌΠ΅Π½ΡΠ°ΠΌΠΈ ΡΠ°Π΄ΠΈΠΎΡΠ°ΡΡΠΎΡΠ½ΠΎΠ³ΠΎ ΡΡΠ°ΠΊΡΠ° ΠΈ ΠΏΠ°ΡΡΠΈΠ²Π½ΡΠΌΠΈ ΡΠ»Π΅ΠΌΠ΅Π½ΡΠ°ΠΌΠΈ Π°Π½ΡΠ΅Π½Π½ΠΎΠ³ΠΎ ΡΡΠ°ΠΊΡΠ°.ΠΠ°ΡΠ΅ΡΠΈΠ°Π»Ρ ΠΈ ΠΌΠ΅ΡΠΎΠ΄Ρ. ΠΡΠ΅Π½ΠΊΠ° Π²Π»ΠΈΡΠ½ΠΈΡ ΠΌΠ°ΡΠ΅ΡΠΈΠ°Π»Π° ΠΏΠΎΠ΄Π»ΠΎΠΆΠΊΠΈ ΠΈ ΡΠ²ΠΎΠΉΡΡΠ² ΠΌΠ΅ΡΠ°Π»Π»ΠΈΡΠ΅ΡΠΊΠΎΠΉ ΡΠΎΠ»ΡΠ³ΠΈ Π½Π° Ρ
Π°ΡΠ°ΠΊΡΠ΅ΡΠΈΡΡΠΈΠΊΠΈ ΠΏΠ΅ΡΠ°ΡΠ½ΡΡ
ΡΡΡΡΠΊΡΡΡ ΠΈ ΡΠ°ΡΡΠ΅Ρ Ρ
Π°ΡΠ°ΠΊΡΠ΅ΡΠΈΡΡΠΈΠΊ ΡΠ°Π·ΡΠ°Π±ΠΎΡΠ°Π½Π½ΠΎΠ³ΠΎ ΠΏΠ΅ΡΠ΅Ρ
ΠΎΠ΄Π° Π²ΡΠΏΠΎΠ»Π½Π΅Π½Ρ Ρ ΠΏΠΎΠΌΠΎΡΡΡ ΡΠ»Π΅ΠΊΡΡΠΎΠ΄ΠΈΠ½Π°ΠΌΠΈΡΠ΅ΡΠΊΠΎΠ³ΠΎ ΠΌΠΎΠ΄Π΅Π»ΠΈΡΠΎΠ²Π°Π½ΠΈΡ Π² ΡΠΈΡΡΠ΅ΠΌΠ΅ Π°Π²ΡΠΎΠΌΠ°ΡΠΈΠ·ΠΈΡΠΎΠ²Π°Π½Π½ΠΎΠ³ΠΎ ΠΏΡΠΎΠ΅ΠΊΡΠΈΡΠΎΠ²Π°Π½ΠΈΡ CST Microwave Studio ΠΈ ΠΏΠΎΠ΄ΡΠ²Π΅ΡΠΆΠ΄Π΅Π½Ρ ΡΠ΅Π·ΡΠ»ΡΡΠ°ΡΠ°ΠΌΠΈ ΡΠΊΡΠΏΠ΅ΡΠΈΠΌΠ΅Π½ΡΠ°Π»ΡΠ½ΠΎΠ³ΠΎ ΠΈΡΡΠ»Π΅Π΄ΠΎΠ²Π°Π½ΠΈΡ ΠΈΠ·Π³ΠΎΡΠΎΠ²Π»Π΅Π½Π½ΡΡ
ΠΎΠ±ΡΠ°Π·ΡΠΎΠ² ΡΠΈΡΠΎΠΊΠΎΠΏΠΎΠ»ΠΎΡΠ½ΠΎΠ³ΠΎ Π²ΠΎΠ»Π½ΠΎΠ²ΠΎΠ΄Π½ΠΎ-ΠΌΠΈΠΊΡΠΎΠΏΠΎΠ»ΠΎΡΠΊΠΎΠ²ΠΎΠ³ΠΎ ΠΏΠ΅ΡΠ΅Ρ
ΠΎΠ΄Π° Π½Π° Π²Π΅ΠΊΡΠΎΡΠ½ΠΎΠΌ Π°Π½Π°Π»ΠΈΠ·Π°ΡΠΎΡΠ΅ ΡΠ΅ΠΏΠ΅ΠΉ.Π Π΅Π·ΡΠ»ΡΡΠ°ΡΡ. Π Π°Π·ΡΠ°Π±ΠΎΡΠ°Π½Π½ΡΠΉ ΠΠΠΠ ΠΎΡΠ½ΠΎΠ²Π°Π½ Π½Π° ΠΈΡΠΏΠΎΠ»ΡΠ·ΠΎΠ²Π°Π½ΠΈΠΈ ΠΏΡΠΎΠ²ΠΎΠ΄ΡΡΠ΅Π³ΠΎ Π·ΠΎΠ½Π΄Π°, ΡΠ΅Π°Π»ΠΈΠ·ΠΎΠ²Π°Π½Π½ΠΎΠ³ΠΎ Π½Π° ΠΏΠ΅ΡΠ°ΡΠ½ΠΎΠΉ ΠΏΠ»Π°ΡΠ΅, Π·Π°ΠΊΡΠ΅ΠΏΠ»Π΅Π½Π½ΠΎΠΉ ΠΌΠ΅ΠΆΠ΄Ρ ΡΡΠ°Π½Π΄Π°ΡΡΠ½ΡΠΌ ΠΏΠΎΠ΄Π²ΠΎΠ΄ΡΡΠΈΠΌ Π²ΠΎΠ»Π½ΠΎΠ²ΠΎΠ΄ΠΎΠΌ WR15 ΠΈ ΡΠ΅ΡΠ²Π΅ΡΡΡΠ²ΠΎΠ»Π½ΠΎΠ²ΠΎΠΉ Π·Π°Π³Π»ΡΡΠΊΠΎΠΉ ΡΠΎΠ³ΠΎ ΠΆΠ΅ ΡΠ΅ΡΠ΅Π½ΠΈΡ. ΠΠ»Ρ ΡΠΌΠ΅Π½ΡΡΠ΅Π½ΠΈΡ ΠΏΠΎΡΠ΅ΡΡ Π² ΠΏΠ΅ΡΠ΅Ρ
ΠΎΠ΄Π΅ Π½Π° ΠΏΠ΅ΡΠ°ΡΠ½ΠΎΠΉ ΠΏΠ»Π°ΡΠ΅ Π²ΡΠΏΠΎΠ»Π½Π΅Π½Ρ ΡΠΊΠ²ΠΎΠ·Π½ΡΠ΅ Π½Π΅ΠΌΠ΅ΡΠ°Π»Π»ΠΈΠ·ΠΈΡΠΎΠ²Π°Π½Π½ΡΠ΅ ΠΎΡΠ²Π΅ΡΡΡΠΈΡ, ΡΠΈΠΌΠΌΠ΅ΡΡΠΈΡΠ½ΠΎ ΡΠ°ΡΠΏΠΎΠ»ΠΎΠΆΠ΅Π½Π½ΡΠ΅ Π²ΠΎΠΊΡΡΠ³ Π·ΠΎΠ½Π΄Π° Π΄Π»Ρ ΡΠΌΠ΅Π½ΡΡΠ΅Π½ΠΈΡ Π΄ΠΎΠ»ΠΈ Π΄ΠΈΡΠ»Π΅ΠΊΡΡΠΈΠΊΠ° ΠΏΠ΅ΡΠ°ΡΠ½ΠΎΠΉ ΠΏΠ»Π°ΡΡ Π² Π²ΠΎΠ»Π½ΠΎΠ²ΠΎΠ΄Π½ΠΎΠΌ ΠΊΠ°Π½Π°Π»Π΅. ΠΠΎ ΡΠ΅Π·ΡΠ»ΡΡΠ°ΡΠ°ΠΌ ΡΠΊΡΠΏΠ΅ΡΠΈΠΌΠ΅Π½ΡΠ°Π»ΡΠ½ΠΎΠ³ΠΎ ΠΈΡΡΠ»Π΅Π΄ΠΎΠ²Π°Π½ΠΈΡ ΠΈΠ·Π³ΠΎΡΠΎΠ²Π»Π΅Π½Π½ΡΡ
ΠΌΠ°ΠΊΠ΅ΡΠΎΠ² ΠΏΠ΅ΡΠ΅Ρ
ΠΎΠ΄ΠΎΠ², ΡΠ΅Π°Π»ΠΈΠ·ΠΎΠ²Π°Π½Π½ΡΡ
Π½Π° ΠΏΠ΅ΡΠ°ΡΠ½ΡΡ
ΠΏΠ»Π°ΡΠ°Ρ
, Π²ΡΠΏΠΎΠ»Π½Π΅Π½Π½ΡΡ
ΠΈΠ· ΠΌΠ°ΡΠ΅ΡΠΈΠ°Π»ΠΎΠ² RO4350B ΠΈ RT/Duroid 5880 ΠΏΡΠΎΠΈΠ·Π²ΠΎΠ΄ΡΡΠ²Π° ΠΊΠΎΠΌΠΏΠ°Π½ΠΈΠΈ "Rogers", Π±ΡΠ»ΠΎ ΠΏΠΎΠ»ΡΡΠ΅Π½ΠΎ, ΡΡΠΎ ΠΏΠ΅ΡΠ΅Ρ
ΠΎΠ΄ ΡΠΎΠ³Π»Π°ΡΠΎΠ²Π°Π½ ΠΏΠΎ ΡΡΠΎΠ²Π½Ρ ΠΊΠΎΡΡΡΠΈΡΠΈΠ΅Π½ΡΠ° ΠΎΡΡΠ°ΠΆΠ΅Π½ΠΈΡ S11 <-10 Π΄Π Π² ΠΏΠΎΠ»ΠΎΡΠ΅ ΡΠ°ΡΡΠΎΡ 50...70 ΠΠΡ ΠΈ ΠΎΠ±Π΅ΡΠΏΠ΅ΡΠΈΠ²Π°Π΅Ρ ΠΏΠΎΡΠ΅ΡΠΈ Π½Π° ΠΏΡΠΎΡ
ΠΎΠΆΠ΄Π΅Π½ΠΈΠ΅ Π½Π΅ Π±ΠΎΠ»Π΅Π΅ 0.4 ΠΈ 0.7 Π΄Π Π΄Π»Ρ ΠΌΠ°ΡΠ΅ΡΠΈΠ°Π»ΠΎΠ² RT/Duroid 5880 ΠΈ RO4350B ΡΠΎΠΎΡΠ²Π΅ΡΡΡΠ²Π΅Π½Π½ΠΎ.ΠΠ°ΠΊΠ»ΡΡΠ΅Π½ΠΈΠ΅. ΠΡΠ΅Π΄Π»ΠΎΠΆΠ΅Π½Π½ΡΠΉ ΠΌΠ΅ΡΠΎΠ΄ ΡΠ½ΠΈΠΆΠ΅Π½ΠΈΡ ΠΏΠΎΡΠ΅ΡΡ Π² Π²ΠΎΠ»Π½ΠΎΠ²ΠΎΠ΄Π½ΠΎ-ΠΌΠΈΠΊΡΠΎΠΏΠΎΠ»ΠΎΡΠΊΠΎΠ²ΠΎΠΌ ΠΏΠ΅ΡΠ΅Ρ
ΠΎΠ΄Π΅ ΠΎΡΡΡΠ΅ΡΡΠ²Π»ΡΠ΅ΡΡΡ Π·Π° ΡΡΠ΅Ρ ΡΠΌΠ΅Π½ΡΡΠ΅Π½ΠΈΡ Π²Π»ΠΈΡΠ½ΠΈΡ Π΄ΠΈΡΠ»Π΅ΠΊΡΡΠΈΡΠ΅ΡΠΊΠΎΠΉ ΠΏΠΎΠ΄Π»ΠΎΠΆΠΊΠΈ ΠΏΡΠΈ ΠΈΡΠΏΠΎΠ»ΡΠ·ΠΎΠ²Π°Π½ΠΈΠΈ ΡΠ°Π·Π»ΠΈΡΠ½ΡΡ
Π‘ΠΠ§-ΠΌΠ°ΡΠ΅ΡΠΈΠ°Π»ΠΎΠ² ΠΏΠ΅ΡΠ°ΡΠ½ΡΡ
ΠΏΠ»Π°Ρ. ΠΡΠΎ ΠΏΠΎΠ·Π²ΠΎΠ»ΡΠ΅Ρ ΡΠ°ΡΡΠΌΠ°ΡΡΠΈΠ²Π°ΡΡ ΡΠ°Π·ΡΠ°Π±ΠΎΡΠ°Π½Π½ΡΠΉ Π²ΠΎΠ»Π½ΠΎΠ²ΠΎΠ΄Π½ΠΎ-ΠΌΠΈΠΊΡΠΎΠΏΠΎΠ»ΠΎΡΠΊΠΎΠ²ΡΠΉ ΠΏΠ΅ΡΠ΅Ρ
ΠΎΠ΄ ΠΊΠ°ΠΊ ΠΏΠ΅ΡΡΠΏΠ΅ΠΊΡΠΈΠ²Π½ΡΠΉ Π΄Π»Ρ ΡΠΎΠ΅Π΄ΠΈΠ½Π΅Π½ΠΈΡ ΡΠ°Π·Π»ΠΈΡΠ½ΡΡ
ΠΌΠΈΠΊΡΠΎΠΏΠΎΠ»ΠΎΡΠΊΠΎΠ²ΡΡ
ΠΈ Π²ΠΎΠ»Π½ΠΎΠ²ΠΎΠ΄Π½ΡΡ
ΡΡΡΡΠΎΠΉΡΡΠ² ΠΌΠΈΠ»Π»ΠΈΠΌΠ΅ΡΡΠΎΠ²ΠΎΠ³ΠΎ Π΄ΠΈΠ°ΠΏΠ°Π·ΠΎΠ½Π° Π΄Π»ΠΈΠ½ Π²ΠΎΠ»Π½
Past Achievements and Future Challenges in 3D Photonic Metamaterials
Photonic metamaterials are man-made structures composed of tailored micro- or
nanostructured metallo-dielectric sub-wavelength building blocks that are
densely packed into an effective material. This deceptively simple, yet
powerful, truly revolutionary concept allows for achieving novel, unusual, and
sometimes even unheard-of optical properties, such as magnetism at optical
frequencies, negative refractive indices, large positive refractive indices,
zero reflection via impedance matching, perfect absorption, giant circular
dichroism, or enhanced nonlinear optical properties. Possible applications of
metamaterials comprise ultrahigh-resolution imaging systems, compact
polarization optics, and cloaking devices. This review describes the
experimental progress recently made fabricating three-dimensional metamaterial
structures and discusses some remaining future challenges
Microwave Surface Impedance and Complex Conductivity of High-T c Single Crystals: Current State and Unsolved Problems
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