1 research outputs found
Two-dimensional electron systems in inversion layers of p-type Hg
Strong oscillations on capacitance and conductance have been observed
in p-type metal-insulator-semiconductor structures,
made by using a recent process for the interface passivation. This behaviour
is attributed to a two-dimensional electron gas in the n-inversion layer and
the variation of the conductance maximums with temperature indicates that the
dominant perpendicular transport mechanism for electrons is an incoherent
two-step tunnelling through deep levels in the gap. Three models have been
used to describe the quantum confinement: the simple variational method, the
triangular potential approximation and the propagation matrix method. The later
approach takes into account the non parabolicity of the conduction band structure
and uses a finite height barrier at the insulator-semiconductor interface.
A very good agreement between experimental and calculated values for the
two lowest subband energy is obtained