Development of CdSe thin films for application in electronic devices

Thin films of cadmium selenide (CdSe) have been deposited on fluorine-doped tin oxide (FTO)-coated glass using potentiostatic electrodeposition method. The suitable range of deposition potentials for the formation of stoichiometric layer of CdSe was established using cyclic voltammograms. The films have been characterised using X-ray diffraction (XRD), Raman spectroscopy, optical absorption, scanning electron microscopy, atomic force microscopy and photo-electrochemical (PEC) cell techniques. XRD results show that the deposited films are polycrystalline in nature having hexagonal structure with preferred orientation along (002) plane. PEC study reveals that the films have n-type electrical conductivity. The optical bandgap of the film have been estimated to be 2.00 and 1.80 eV for as-deposited and heat-treated layers respectively when grown at a cathodic potential of 1,972 mV. The electronic quality of the electrodeposited CdSe layers was also tested using the device structure glass/FTO/n-CdSe/Au which produced Schottky diodes with rectification factor of 102.9, reverse saturation current of ~372 nA and threshold voltage of ~0.15 V. The potential barrier observed for Au/n-CdSe interface is >1.10 eV

Development of Polyaniline using electrochemical technique for plugging pinholes in Cadmium Sulfide/Cadmium Telluride Solar Cells

Polyaniline (PAni) thin films were prepared by using an electrochemical polymerization technique on glass/FTO substrates by varying the deposition potential, deposition time, pH concentrations and heat treatment conditions. The structural, morphological, optical and electrical properties of electrodeposited PAni films were characterized using x-ray diffraction, scanning electron microscopy, UV-VIS spectroscopy, optical profilometry and D.C. conductivity measurements. Structural analysis shows the formation of the highest crystallinity for PAni thin film grown at V g 1654 mV. Optical absorption measurements have demonstrated a wide variety of energy band gaps (E g), varying from ≥0.50 eV to 2.40 eV for PAni grown by tuning the pH value during the deposition. The electrical resistivity showed an increase from 0.37 × 106 cm to 3.91 × 106 cm when the pH increased from 2.00 to 6.50. The diode structures of glass/FTO/CdS/CdTe/PAni/Au were fabricated incorporating PAni as a pinhole plugging layer, and assessed for their photovoltaic activities. The results showed the enhancement of all device parameters, especially of open circuit voltage and fill factors. This improvement offers a great potential for enhancing solar cell performance and the device lifetime, and the latest results are presented in this paper

Study of Fermi level movement during CdCl2 treatment of CdTe thin films using Ultra-violet Photoemission Spectroscopy

The CdCl2 treatment used in the development of high efficiency CdTe solar cells is an essential processing step but remains fully unexplored. What really happens during this treatment is not yet fully understood. The changes in doping concentrations during this processing step are a key parameter to investigate. Determination of the position of the Fermi level is a good method to explore these changes and therefore photoelectrochemical cell method and ultra-violet photoemission spectroscopy method have been used to investigate these trends. Four different CdTe layers prepared by electroplating have been used for this investigation. The overall observations indicate the settling down of the FL in the upper half of the bandgap after CdCl2 treatment

Effects of deposition time and post-deposition annealing on the physical and chemical properties of electrodeposited CdS thin films for solar cell application

CdS thin films were cathodically electrodeposited by means of a two-electrode deposition system for different durations. The films were characterised for their structural, optical, morphological and compositional properties using x-ray diffraction (XRD), spectrophotometry, scanning electron microscopy (SEM) and energy dispersive x-ray (EDX) respectively. The results obtained show that the physical and chemical properties of these films are significantly influenced by the deposition time and post-deposition annealing. This influence manifests more in the as-deposited materials than in the annealed ones. XRD results show that the crystallite sizes of the different films are in the range (9.4 – 65.8) nm and (16.4 – 66.0) nm in the as-deposited and annealed forms respectively. Optical measurements show that the absorption coefficients are in the range (2.7×104 – 6.7×104) cm-1 and (4.3×104 – 7.2×104) cm-1 respectively for as-deposited and annealed films. The refractive index is in the range (2.40 – 2.60) for as-deposited films and come to the value of 2.37 after annealing. The extinction coefficient varies in the range (0.1 – 0.3) in asdeposited films and becomes 0.1 in annealed films. The estimated energy bandgap of the films is in the range (2.48 – 2.50) eV for as-deposited films and becomes 2.42 eV for all annealed films. EDX results show that all the films are S-rich in chemical composition with fairly uniform Cd/S ratio after annealing. The results show that annealing improves the qualities of the films and deposition time can be used to control the film thickness. Keywords: Electrodeposition; two-electrode system; CdS; annealing; deposition time; thin-film

Fluorine-induced improvement of structural and optical properties of CdTe thin films for solar cell efficiency enhancement

CdTe thin films of different thicknesses were electrodeposited and annealed in air after different chemical treatments to study the effects of thickness and the different chemical treatments on these films for photovoltaic applications. The thicknesses of the samples range from 1.1 μm to 2.1 μm and the annealing process was carried out after prior CdCl2 treatment and CdCl2+CdF2 treatment as well as without any chemical treatment. Detailed optical and structural characterisation of the as-deposited and annealed CdTe thin films using UV-Vis spectrophotometry and x-ray diffraction reveal that incorporating fluorine in the well-known CdCl2 treatment of CdTe produces remarkable improvement in the optical and structural properties of the materials. This CdCl2+CdF2 treatment produced solar cell with efficiency of 8.3% compared to CdCl2 treatment, with efficiency of 3.3%. The results reveal an alternative method of post-deposition chemical treatment of CdTe which can lead to the production of CdTe-based solar cells with enhanced photovoltaic conversion efficiencies compared to the use of only CdCl2. Keywords: CdTe; CdCl2

Optimisation of CdTe electrodeposition voltage for development of CdS/CdTe solar cells

Cadmium telluride (CdTe) thin films have been deposited on glass/conducting glass (FTO) substrates using low-cost two electrode system and aqueous electrodeposition method. The glass/FTO substrates were used to grow the CdTe layers at different deposition voltages. The structural, electrical, optical and morphological properties of the resulting films have been characterized using X-ray diffraction (XRD), Photoelectrochemical (PEC) cell measurements, optical absorption spectroscopy and Scanning Electron Microscopy (SEM). The XRD results indicate that at voltages less than or higher than 1.576 V, crystallinity is poor due to presence of two phases. When CdTe is grown at 1.576 V, the composition is stoichiometric, and the (111) peak has the highest intensity in the XRD diffractogram indicating a high degree of crystallinity. SEM studies showed that all layers had pin-holes and gaps between the grains. These openings seem to be more common in the samples grown at voltages away from the stoichiometric voltage (1.576 V). The linear I–V curves of glass/FTO/CdS/CdTe/Au structures fabricated using stoichiometric CdTe showed efficiency of 10.1 % under AM 1.5 illuminatio

Improvement of composition of CdTe thin films during heat treatment in the presence of CdCl2

CdCl2 treatment is a crucial step in development of CdS/CdTe solar cells. Although this rocessing step has been used over a period of three decades, full understanding is not yet achieved. This paper reports the experimental evidence for improvement of composition of CdTe layers during CdCl2 treatment. This investigation makes use of four selected analytical techniques; Photo-electro-chemical (PEC) cell, X-ray diffraction (XRD), Raman spectroscopy and Scanning electron microscopy (SEM). CdTe layers used were electroplated using three Cd precursors; CdSO4, Cd(NO3)2 and CdCl2. Results show the improvement of stoichiometry of CdTe layers during CdCl2 treatment through chemical reaction between Cd from CdCl2 and elemental Te that usually precipitate during CdTe growth, due to its natural behaviour. XRD and SEM results show that the low-temperature (~85ºC) electroplated CdTe layers consist of ~(20-60) nm size crystallites, but after CdCl2 treatment, the layers show drastic recrystallisation with grains becoming a few microns in size. These CdCl2 treated layers are then comparable to high temperature grown CdTe layers by the size of grains

Electro-plating and characterisation of cadmium sulphide thin films using ammonium thiosulphate as the sulphur source

Cadmium sulphide (CdS) thin films have been successfully prepared from an aqueous electrolyte bath containing CdCl2 and ammonium thiosulphate ((NH4)2S2O3) using electrodeposition technique. The structural, compositional, optical, morphological and electrical properties of these thin films have been characterized using X-ray diffraction (XRD), Raman spectroscopy, energy dispersive X-ray spectroscopy, UV–Vis spectrophotometry, scanning electron microscopy (SEM), atomic force microscopy (AFM), photoelectrochemical cell and D.C. current–voltage (I–V) measurements. The optimum deposition cathodic potential has been observed at 1,455 mV, in a 2-electrode system with respect to carbon anode. Structural analysis using XRD shows a mixture of hexagonal and cubic phases in the as-deposited CdS samples and a phase transformation to the hexagonal structure occurred after heat treatment at 400 °C for 20 min. Optical studies demonstrate an improvement in the band edge, producing 2.42 eV for the band gap of the films after heat treatment. The heat treated CdS thin films show better transmission for wavelengths longer than 500 nm. SEM and AFM show that the heat-treated samples are more uniform, smoother and have larger grain size. Electrical studies confirm that the CdS thin films have n-type electrical conductivity and heat treated CdS thin films have resistivities of the order of 105 Ω cm

Scientific complications and controversies noted in the field of CdS/CdTe thin film solar cells and the way forward for further development

Cadmium telluride-based solar cell is the most successfully commercialised thin film solar cell today. The laboratory-scale small devices have achieved ~ 22%, and commercial solar panels have reached ~ 18% conversion efficiencies. However, there are various technical complications and some notable scientific contradictions that appear in the scientific literature published since the early 1970s. This review paper discusses some of these major complications and controversies in order to focus future research on issues of material growth and characterisation, post-growth processing, device architectures and interpretation of the results. Although CdTe can be grown using more than 14 different growth techniques, successful commercialisation has been taken place using close-space sublimation and electrodeposition techniques only. The experimental results presented in this review are mainly based on electrodeposition. Historical trends of research and commercial successes have also been discussed compared to the timeline of novel breakthroughs in this field. Deeper understanding of these issues may lead to further increase in conversion efficiencies of this solar cell. Some novel ideas for further development of thin film solar cells are also discussed towards the end of this paper

Effects of thickness and annealing on optoelectronic properties of electrodeposited ZnS thin films for photonic device applications

Thin layers of ZnS with thicknesses of 400 nm, 500 nm, and 700 nm have been electrodeposited on glass/fluorine-doped tin oxide substrates using a simple two-electrode setup under similar conditions. Structural characterization of the layers using x-ray diffraction (XRD) measurements showed that they were amorphous. The results of optical characterization carried out in the wavelength range of 315 nm to 800 nm using spectrophotometry revealed that the optical properties of the layers are strongly influenced by the film thickness as well as annealing conditions. The values of the refractive index, extinction coefficient, absorption coefficient, and dielectric constant obtained from normal-incidence transmittance spectra were generally lower after annealing, showing also the influence of postdeposition annealing on the deposited ZnS layers. Electrical characterization of the layers, using direct-current current–voltage measurement under dark conditions at room temperature, shows that the resistivity of the as-deposited and annealed layers is in the range of 1.4 × 104 Ω cm to 2.5 × 104 Ω cm and 2.5 × 104 Ω cm to 3.1 × 104 Ω cm, respectively. The results suggest that the optoelectronic properties can be tuned for particular applications by adjusting the thickness of the layers appropriately