Field Tuning of Ferromagnetic Domain Walls on Elastically Coupled Ferroelectric Domain Boundaries

We report on the evolution of ferromagnetic domain walls during magnetization reversal in elastically coupled ferromagnetic-ferroelectric heterostructures. Using optical polarization microscopy and micromagnetic simulations, we demonstrate that the spin rotation and width of ferromagnetic domain walls can be accurately controlled by the strength of the applied magnetic field if the ferromagnetic walls are pinned onto 90 degrees ferroelectric domain boundaries. Moreover, reversible switching between magnetically charged and uncharged domain walls is initiated by magnetic field rotation. Switching between both wall types reverses the wall chirality and abruptly changes the width of the ferromagnetic domain walls by up to 1000%.Comment: 5 pages, 5 figure

Andreev reflection at half-metal-superconductor interfaces with non-uniform magnetization

Andreev reflection at the interface between a half-metallic ferromagnet and a spin-singlet superconductor is possible only if it is accompanied by a spin flip. Here we calculate the Andreev reflection amplitudes for the case that the spin flip originates from a spatially non-uniform magnetization direction in the half metal. We calculate both the microscopic Andreev reflection amplitude for a single reflection event and an effective Andreev reflection amplitude describing the effect of multiple Andreev reflections in a ballistic thin film geometry. It is shown that the angle and energy dependence of the Andreev reflection amplitude strongly depends on the orientation of the gradient of the magnetization with respect to the interface. Establishing a connection between the scattering approach employed here and earlier work that employs the quasiclassical formalism, we connect the symmetry properties of the Andreev reflection amplitudes to the symmetry properties of the anomalous Green function in the half metal.Comment: 13 pages, 4 figure

Magneto-optical Kerr effect susceptometer for the analysis of magnetic domain wall dynamics

Domain wall dynamics in thin magnetic films with perpendicular and in-plane anisotropy is studied using a novel magneto-optical Kerr effect susceptometry method. The method allows for measurements of domain wall motion under ac field excitation and the analysis of dynamic modes as a function of driving frequency and magnetic field amplitude. Domain wall dynamics in the perpendicular anisotropy system, a Co/Pt multilayer, is characterized by thermally activated creep motion. For this dynamic mode, a polydispersivity exponent of β = 0.50 ± 0.03 is derived at small excitation energy, which is in excellent agreement with theoretical models. The dynamics of the other system, a Co wire with transverse uniaxial anisotropy, is dominated by viscous slide motion in a regular magnetic stripe pattern. Analytical expressions are derived for this magnetic configuration and by using these expressions, accurate values for the depinning field and the domain wall mobility are extracted from the susceptibility measurements.Peer reviewe

Magnetoresistance Anisotropy of Polycrystalline Cobalt Films: Geometrical-Size- and Domain-Effects

The magnetoresistance (MR) of 10 nm to 200 nm thin polycrystalline Co-films, deposited on glass and insulating Si(100), is studied in fields up to 120 kOe, aligned along the three principal directions with respect to the current: longitudinal, transverse (in-plane), and polar (out-of-plane). At technical saturation, the anisotropic MR (AMR) in polar fields turns out to be up to twice as large as in transverse fields, which resembles the yet unexplained geometrical size-effect (GSE), previously reported for Ni- and Permalloy films. Upon increasing temperature, the polar and transverse AMR's are reduced by phonon-mediated sd-scattering, but their ratio, i.e. the GSE remains unchanged. Basing on Potters's theory [Phys.Rev.B 10, 4626(1974)], we associate the GSE with an anisotropic effect of the spin-orbit interaction on the sd-scattering of the minority spins due to a film texture. Below magnetic saturation, the magnitudes and signs of all three MR's depend significantly on the domain structures depicted by magnetic force microscopy. Based on hysteresis loops and taking into account the GSE within an effective medium approach, the three MR's are explained by the different magnetization processes in the domain states. These reveal the importance of in-plane uniaxial anisotropy and out-of-plane texture for the thinnest and thickest films, respectively.Comment: 10 pages, 9 figure

Antisymmetric magnetoresistance in magnetic multilayers with perpendicular anisotropy

While magnetoresistance (MR) has generally been found to be symmetric in applied field in non-magnetic or magnetic metals, we have observed antisymmetric MR in Co/Pt multilayers. Simultaneous domain imaging and transport measurements show that the antisymmetric MR is due to the appearance of domain walls that run perpendicular to both the magnetization and the current, a geometry existing only in materials with perpendicular magnetic anisotropy. As a result, the extraordinary Hall effect (EHE) gives rise to circulating currents in the vicinity of the domain walls that contributes to the MR. The antisymmetric MR and EHE have been quantitatively accounted for by a theoretical model.Comment: 17 pages, 4 figure

Magnetic properties of nanosized diluted magnetic semiconductors with band splitting

The continual model of the nonuniform magnetism in thin films and wires of a diluted magnetic semiconductor is considered with taking into account the finite spin polarization of carriers responsible for the indirect interaction of magnetic impurities (e.g. via RKKY mechanism). Spatial distributions (across the film thickness or the wire radius) of the magnetizaton and carrier concentrations of different spin orientations, as well as the temperature dependence of the average magnetization are determined as the solution of the nonlinear integral equation

Giant Magnetoelastic Effects in BaTiO3-based Extrinsic Multiferroic Hybrids

Extrinsic multiferroic hybrid structures consisting of ferromagnetic and ferroelectric layers elastically coupled to each other are promising due to their robust magnetoelectric effects even at room temperature. For a quantitative analysis of these magnetoelectric effects, a detailed knowledge of the piezoelectric and magnetoelastic behavior of both constituents as well as their mutual elastic coupling is mandatory. We here report on a theoretical and experimental study of the magnetic behavior of BaTiO3-based extrinsic multiferroic structures. An excellent agreement between molecular dynamics simulations and the experiments was found for Fe50Co50/BaTiO3 and Ni/BaTiO3 hybrid structures. This demonstrates that the magnetic behavior of extrinsic multiferroic hybrid structures can be determined by means of ab-initio calculations, allowing for the design of novel multiferroic hybrids

Colossal Positive Magnetoresistance in a Doped Nearly Magnetic Semiconductor

We report on a positive colossal magnetoresistance (MR) induced by metallization of FeSb$_{2}$, a nearly magnetic or "Kondo" semiconductor with 3d ions. We discuss contribution of orbital MR and quantum interference to enhanced magnetic field response of electrical resistivity.Comment: 5 pages, 5 figure

Local Structure of Multiferroic TbMn2O5: Evidence for an Anomalous Terbium Oxygen Distribution

The temperature dependent local structure of TbMn2O5 was determined by x-ray absorption spectroscopy. An anomalous Tb-O distribution is found. At high temperature it is broad but resolves into two distinct peaks below approximately 180 K. The distributions sharpen below the Tb magnetic ordering temperature (approximately 10 K). The distortions in the Tb-O distribution, away from the Pbam structure, are consistent with rotations of the MnOx polyhedra about the c-axis and suggest that Tb-O bond polarization may play a significant role in the observed ferroelectric properties of this system.Comment: 7 Figure

Anisotropic Hubbard model on a triangular lattice -- spin dynamics in Ho Mn O_3

The recent neutron-scattering data for spin-wave dispersion in $\rm Ho Mn O_3$ are well described by an anisotropic Hubbard model on a triangular lattice with a planar (XY) spin anisotropy. Best fit indicates that magnetic excitations in $\rm Ho Mn O_3$ correspond to the strong-coupling limit $U/t > \sim 15$, with planar exchange energy $J=4t^2/U \simeq 2.5$meV and planar anisotropy $\Delta U \simeq 0.35$meV.Comment: 4 pages, 3 figure