Transport properties of pristine few-layer black phosphorus by van der Waals passivation in an inert atmosphere

Ultrathin black phosphorus is a two-dimensional semiconductor with a sizeable band gap. Its excellent electronic properties make it attractive for applications in transistor, logic and optoelectronic devices. However, it is also the first widely investigated two-dimensional material to undergo degradation upon exposure to ambient air. Therefore a passivation method is required to study the intrinsic material properties, understand how oxidation affects the physical properties and enable applications of phosphorene. Here we demonstrate that atomically thin graphene and hexagonal boron nitride can be used for passivation of ultrathin black phosphorus. We report that few-layer pristine black phosphorus channels passivated in an inert gas environment, without any prior exposure to air, exhibit greatly improved n-type charge transport resulting in symmetric electron and hole transconductance characteristics.B.O. acknowledges support by the National Research Foundation, Prime Minister's Office, Singapore under its Competitive Research Programme (CRP Award No. NRF-CRP9-2011-3) and the SMF-NUS Research Horizons Award 2009-Phase II. A.H.C.N. acknowledges the NRF-CRP award 'Novel 2D materials with tailored properties: beyond graphene'. The calculations were performed at the GRC computing facilities. A.Z. and D.F.C. acknowledge the NSF grant CHE-1301157. (NRF-CRP9-2011-3 - National Research Foundation, Prime Minister's Office, Singapore under its Competitive Research Programme (CRP); SMF-NUS Research Horizons Award-Phase II; NRF-CRP award 'Novel 2D materials with tailored properties: beyond graphene'; CHE-1301157 - NSF)Published versio