Photoresponse and H2 gas sensing properties of highly oriented Al and Al/Sb doped ZnO thin films

AbstractZnO:Al and ZnO:Al/Sb thin films have been prepared and investigated. The thin films were deposited on Si substrates by the sol–gel method. The structural, optical and electrical properties of ZnO films have been investigated by spectrophotometry, ellipsometry, X-ray diffraction and current–voltage characterizations. It is found that the films exhibit wurtzite structure with a highly c-axis orientation perpendicular to the surface of the substrate, a high reflectivity in the infrared region and a response to illumination. Furthermore, it has been found that Si/(ZnO:Al/Sb)/Al photodiode is promising in photoconduction device while Si/(ZnO:Al)/Al can be used as gas sensor responding to the low H2 concentrations

Etude photoelectrochimique de GaAs(n) et Si(n) en milieu non aqueux CH_3OH et CH_3CN : etude et realisation de cellules photoelectrochimiques minces

SIGLECNRS T Bordereau / INIST-CNRS - Institut de l'Information Scientifique et TechniqueFRFranc

Investigation of Strongly Hydrophobic and Thick Porous Silicon Stain Films Properties

Porous silicon (PSi) structures with strong hydrophobicity have been achieved by chemical etching of p-type silicon substrates in a solution based on hydrofluoric acid solution (HF) and vanadium oxide (V2O5). The surface morphology and microstructure of the elaborated structured silicon surfaces were investigated using Scanning Electron Microscope (SEM), contact angle and Fourier Transform Infrared spectroscopy (FTIR). The results show that the obtained structures exhibit hierarchically porous surfaces with porous pillars of silicon (PPSi) and an important hydrophobicity of the surface. The electrical properties of those PPSi structures were investigated in presence of 10 ppm of NO2 gas. The response time was about 30s at room temperature. Our results demonstrate that PPSi/Si are highly hydrophobic for long time and suitable for applications in the field of self-cleaning and may be a good candidate in elaborating practical NO2 sensors

Macropore formation in p-type silicon : toward the modeling of morphology

The formation of macropores in silicon during electrochemical etching processes has attracted much interest. Experimental evidences indicate that charge transport in silicon and in the electrolyte should realistically be taken into account in order to be able to describe the macropore morphology. However, up to now, none of the existing models has the requested degree of sophistication to reach such a goal. Therefore, we have undertaken the development of a mathematical model (phase-field model) to describe the motion and shape of the silicon/electrolyte interface during anodic dissolution. It is formulated in terms of the fundamental expression for the electrochemical potential and contains terms which describe the process of silicon dissolution during electrochemical attack in a hydrofluoric acid (HF) solution. It should allow us to explore the influence of the physical parameters on the etching process and to obtain the spatial profiles across the interface of various quantities of interest, such as the hole concentration, the current density, or the electrostatic potential. As a first step, we find that this model correctly describes the space charge region formed at the silicon side of the interfac

Methylated silicon: A longer cycle-life material for Li-ion batteries

International audienc

Abstracts of 1st International Conference on Computational & Applied Physics

This book contains the abstracts of the papers presented at the International Conference on Computational & Applied Physics (ICCAP’2021) Organized by the Surfaces, Interfaces and Thin Films Laboratory (LASICOM), Department of Physics, Faculty of Science, University Saad Dahleb Blida 1, Algeria, held on 26–28 September 2021. The Conference had a variety of Plenary Lectures, Oral sessions, and E-Poster Presentations. Conference Title: 1st International Conference on Computational & Applied PhysicsConference Acronym: ICCAP’2021Conference Date: 26–28 September 2021Conference Location: Online (Virtual Conference)Conference Organizer: Surfaces, Interfaces, and Thin Films Laboratory (LASICOM), Department of Physics, Faculty of Science, University Saad Dahleb Blida 1, Algeria