Quantitative pressure and strain field analysis of helium precipitates in silicon

Abstract The structural properties of overpressurised helium precipitates formed by low dose ion implantation and subsequent annealing of silicon are investigated by quantitative transmission electron microscopy techniques. These precipitates, which show pronounced platelet geometry, are analysed with respect to their geometry, crystallographic orientation and their particular gas pressure values. The dependence of the measured platelet pressure versus the radius is discussed in terms of a Griffith crack. Experimental results on the shape and the crystallographic orientation of the platelets are discussed in the framework of anisotropic elastic properties and surface energies of silicon. The ability of the precipitates to punch-out dislocation loops is discussed in terms of associated threshold shear stress values and evaluated with regard to the defect size dependency