7 research outputs found
Exploring room temperature spin transport under band gap opening in bilayer graphene
Abstract We study the room-temperature electrical control of charge and spin transport in high-quality bilayer graphene, fully encapsulated with hBN and contacted via 1D spin injectors. We show that spin transport in this device architecture is measurable at room temperature and its spin transport parameters can be modulated by opening of a band gap via a perpendicular displacement field. The modulation of the spin current is dominated by the control of the spin relaxation time with displacement field, demonstrating the basic operation of a spin-based field-effect transistor
Exploring room temperature spin transport under band gap opening in bilayer graphene
Abstract We study the room-temperature electrical control of charge and spin transport in high-quality bilayer graphene, fully encapsulated with hBN and contacted via 1D spin injectors. We show that spin transport in this device architecture is measurable at room temperature and its spin transport parameters can be modulated by opening of a band gap via a perpendicular displacement field. The modulation of the spin current is dominated by the control of the spin relaxation time with displacement field, demonstrating the basic operation of a spin-based field-effect transistor
Tuneable spin injection in high-quality graphene with one-dimensional contacts
Spintronics involves the development of low-dimensional electronic systems
with potential use in quantum-based computation. In graphene, there has been
significant progress in improving spin transport characteristics by
encapsulation and reducing impurities, but the influence of standard
two-dimensional (2D) tunnel contacts, via pinholes and doping of the graphene
channel, remains difficult to eliminate. Here, we report the observation of
spin injection and tuneable spin signal in fully-encapsulated graphene, enabled
by van der Waals heterostructures with one-dimensional (1D) contacts. This
architecture prevents significant doping from the contacts, enabling
high-quality graphene channels, currently with mobilities up to 130,000
cmVs and spin diffusion lengths approaching 20 m. The
nanoscale-wide 1D contacts allow spin injection both at room and at low
temperature, with the latter exhibiting efficiency comparable with 2D tunnel
contacts. At low temperature, the spin signals can be enhanced by as much as an
order of magnitude by electrostatic gating, adding new functionality.Comment: Manuscript and Supporting Informatio