82 research outputs found
Excitation photocapacitance study of EL2 in n-GaAs prepared by annealing under different arsenic vapor pressures
Get PDFStoichiometry-dependent deep levels in p-GaAs prepared by annealing under excess arsenic vapor pressure
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Photocapacitive detection of hole emission from DX center in n-type Al0.3Ga0.7As doped with Te
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Photocapacitance investigation of the two photoquenching levels in n-type GaAs crystals with excess arsenic atoms
Get PDFPhotocapacitance investigation of the ionized levels in n-GaAs crystals and its association with the ``photoquenching phenomenon\u27\u27
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Photocapacitance investigation of stoichiometry-dependent deep levels in InP
Get PDFProceedings of the IEEE 24th international symposium on compound semiconductors, San diego, California, 8-11 Semptemb
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