Anomalous Hall effect in field-effect structures of (Ga,Mn)As

The anomalous Hall effect in metal-insulator-semiconductor structures having thin (Ga,Mn)As layers as a channel has been studied in a wide range of Mn and hole densities changed by the gate electric field. Strong and unanticipated temperature dependence, including a change of sign, of the anomalous Hall conductance $\sigma_{xy}$ has been found in samples with the highest Curie temperatures. For more disordered channels, the scaling relation between $\sigma_{xy}$ and $\sigma_{xx}$, similar to the one observed previously for thicker samples, is recovered.Comment: 5 pages, 5 figure

Inelastic electron tunneling spectroscopy of nanoporous gold films

We investigated the localized electronic properties of nanoporous gold films by using an ultra-high vacuum scanning tunneling microscope at low temperature (4.2 K). Second derivative scanning tunneling spectroscopy shows the plasmon peaks of the nanoporous gold films, which are excited by inelastic tunneling electrons. We propose that the nanorod model is appropriate for nanoporous gold studies at the nanometer-scale. These results are supported by a 3D electron tomography analysis and theoretical calculations of nanoporous gold with ellipsoid shape.Comment: 6 pages, 3 figures. This is the authors' version. The published, high resolution version of this paper, Copyright (2014) by the American Physical Society, can be found at http://journals.aps.org/prb

Direct k-space mapping of the electronic structure in an oxide-oxide interface

The interface between LaAlO3 and SrTiO3 hosts a two-dimensional electron system of itinerant carriers, although both oxides are band insulators. Interface ferromagnetism coexisting with superconductivity has been found and attributed to local moments. Experimentally, it has been established that Ti 3d electrons are confined to the interface. Using soft x-ray angle-resolved resonant photoelectron spectroscopy we have directly mapped the interface states in k-space. Our data demonstrate a charge dichotomy. A mobile fraction contributes to Fermi surface sheets, whereas a localized portion at higher binding energies is tentatively attributed to electrons trapped by O-vacancies in the SrTiO3. While photovoltage effects in the polar LaAlO3 layers cannot be excluded, the apparent absence of surface-related Fermi surface sheets could also be fully reconciled in a recently proposed electronic reconstruction picture where the built-in potential in the LaAlO3 is compensated by surface O-vacancies serving also as charge reservoir.Comment: 8 pages, 6 figures, incl. Supplemental Informatio