Effect of pad and slurry on fixed abrasive polishing of gallium oxide crystal

Gallium oxide crystal is one of the most representative fourth generation semiconductor materials with the advantages of high band gap, high voltage resistance and short absorption cutoff edge. It has broad application prospects. Micro-cracks, scratches and other surface defects are prone to appear in the polishing process of Gallium oxide crystal, which is difficult to achieve high-quality surface processing and cannot meet the requirements of corresponding devices. Moreover, the existing polishing process of gallium oxide crystal is complex and inefficient. Fixed abrasive polishing technology has the advantages of controllable abrasive distribution and depth of cut, and high utilization rate of abrasive. In this study, fixed abrasive polishing of gallium oxide crystal was adopted, and the effect of matrix hardness, abrasive concentration of polishing pad, the additives of polishing slurry on material removal rate and surface quality were investigated. The results show that when the hardness of the polishing pad is moderate II, the abrasive concentration is 100%, and the slurry additive is oxalic acid, the material removal rate is 68 nm/min and the surface roughness Sa value is 3.17 nm in fixed abrasive polishing of gallium oxide crystal. Fixed abrasive polishing technology can achieve high-efficient and high-quality polishing of gallium oxide crystal