Berry Phase in single crystals of the dilute magnetic semiconductor (Cd₀.₇Zn₀.₂₈Mn₀.₀₂)₃As₂

Investigations of transverse magnetoresistance have been performed on single crystals of diluted magnetic semiconductor (Cd₀.₇Zn₀.₂₈Mn₀.₀₂)₃As₂ (CZMA). Based on analysis of the Shubnikov-de Haas (SdH) oscillations, observed in the temperature range T = 4.2 ÷ 30 K and at transverse magnetic field B = 0 ÷ 11 T, the phase shift, β, indicating the presence of the Berry phase was determine

Structure and stresses in a system of two mechanical twins in titanium

In the work we have presented the results of experimental studies and mathematical modeling for the processes of the structure formation in a transition zone of wedge-type twins system in commercially pure titanium. The process of interaction of structure defects with twinning dislocations during the formation of a wedge-type twin was taken into consideration. It is shown that the interaction alters the stress maximum in vicinity of boundaries in the system two wedge-type twi

Anomalous cyclotron mass dependence on the magnetic field and Berry’s phase in (Cd₁-x-γZnxMnγ)₃As₂ solid solutions

Shubnikov-de Haas (SdH) effect and magnetoresistance measurements of single crystals of diluted II-V magnetic semiconductors (Cd₁-x-γZnxMnγ)₃As₂ (x+γ= 0.4, y=0.04 and 0.08) are investigated in the temperature range T=4.2 ÷ 300 K and in transverse magnetic field B=0 ÷ 25

Features in low-temperature electrical resistivity of amorphous Cd₃As₂ films due to hopping conductivity with changing activation energy

Amorphous Cd₃As₂ films were deposited on single-crystalline SrTiO3 substrate by high-frequency non-reactive magnetron sputtering. Electrical resistivity of the film, measured within 3-75 K range, increases at cooling. Below ~70 K, negative transverse magnetoresistance observed. Features in electrical resistivity and magnertoresistance can be attributed to variable-range hopping conductivity of the Mott type with local activation energy, which is temperature-dependent. Two temperature ranges in the hopping conductivity observe

Development of voltage fields in Titanium VT1-0 while forming a thin wedge-shaped twin

Twinning refers to the main types of deformation of crystals with a HCP structure and, unlike sliding, this type of plastic deformation depends on many factors affecting this structure. The objective laws of the dependence of twinning process, twins’ mobility in the crystal on the conditions of external energy influences, for exampl

Shubnikov-de Haas oscillations in diluted magnetic semiconductors (Cd₁-x-yZnxMny)₃As₂

Single crystals of a diluted magnetic semiconductor (Cd₁-x-yZnxMny)₃As₂ (CZMA) (х+y=0.4; у=0.04 and 0.08) obtained by Bridgman method were used. The Shubnikov-de Haas (SdH) effect was observed within studying of the dependence of the resistivity on the magnetic field in CZMA solid solutions. The values of the cyclotron mass mc, Hall and Shubnikov carrier concentrations were calculate

Recycling and disposal of gypsum-containing waste generated in the production of citric acid

The cycle of citric acid production with the formation of gypsum-containing waste was considered and options for processing and utilization of citrogypsum were proposed. The methods obtained include: the use of citrogypsum in the production of building materials, the extraction of rare earth metals, as well as the creation of a high-quality organic-mineral fertilizer, during the creation of which it is possible to reduce the negative effect not only from the accumulation of citrogypsum, but also from manure stored in the filtration field

Synthesis and magnetic properties of solid solutions of a diluted magnetic semiconductor (Zn₁-xFex)₃As₂

The magnetic properties of the new semimagnetic semiconductor (Zn₁-xFex)₃As₂ with x < 0.04 have been investigated over a wide temperature range. Single crystals of ZFA were grown using the modified Bridgeman technique. The results of X-ray analyses and the magnetometry data show that the border of solid solutions in this system lay near x = 0.015. Further increasing of x leads to the growing of the second phase, which was identified as Fe₂As. A notable feature of our magnetometry results is the spin-glass-type freezing of magnetic moments in the temperature range of 10 - 50

Processing of rare earth metal oxide for use as a master alloy in the metallurgical industry

This article proposes a method for processing REM oxides for their use as master alloys in ferrous metallurgy products. REMs, in the form of modifiers for steels and alloys, are widely use

Calculation of the band structure and density of localized states of materials of the quasi-binary system Zn₃As₂- Mn₃As₂

Investigations of materials of the quasi-binary system Zn₃As₂- Mn₃As₂ have been performed. We present band structure calculations of crystal structures of Zn₃As₂, Mn₃As₂ and ZnMn₂As₂ within the framework of the density functional theory (DFT) and DFT + U method. The calculations based on first-principles were made using plane waves normalized on pseudopotential with the Quantum Espresso software package. Was obtained, that fundamental gap for Mn₃As₂ and Zn₃As₂ is equal to the optical band gap, while the band gaps for ZnMn₂As₂ was close